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BUP213

BUP213
Mfr. #:
BUP213
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT CHIP NPT TECH 1200V 15A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BUP213 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUP213 DatasheetBUP213 Datasheet (P4-P6)BUP213 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje máximo del emisor de puerta:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
32 A
Altura:
9.25 mm
Longitud:
10 mm
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
500
Subcategoría:
IGBT
Unidad de peso:
0.211644 oz
Tags
BUP21, BUP2, BUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***ark
; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:32A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:32A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:64A; Device Marking:BUP213; No. of Pins:3; Pin Format:GCE; Power, Pd:200W; Power, Ptot:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:95ns; Time, Rise:70ns; Transistors, No. of:1
Parte # Mfg. Descripción Valores Precio
BUP213
DISTI # BUP213IN-ND		Infineon Technologies AGIGBT 1200V 32A 200W TO220
RoHS: Not compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    BUP213
    DISTI # 726-BUP213    		Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
    RoHS: Compliant    		0
      BUP213 E3045A
      DISTI # 726-BUP213E3045A      		Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
      RoHS: Compliant      		0
        BUP213Infineon Technologies AGInsulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
        RoHS: Not Compliant        		1634
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          Disponibilidad
          Valores:
          Available
          En orden:
          5000
          Ingrese la cantidad:
          El precio actual de BUP213 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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