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BSC094N06LS5ATMA1

BSC094N06LS5ATMA1
Mfr. #:
BSC094N06LS5ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET DIFFERENTIATED MOSFETS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC094N06LS5ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
47 A
Rds On - Resistencia de la fuente de drenaje:
9.4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.1 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
7 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
36 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Serie:
OptiMOS 5
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
22 S
Otoño:
3 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
4 ns
Parte # Alias:
BSC094N06LS5 SP001458086
Tags
BSC094, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package, PG-TDSON-8, RoHS
***ark
MOSFET, N-CH, 60V, 47A, 150DEG C, 36W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:47A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 60V, 47A, 150DEG C, 36W; Transistor Polarity: N Channel; Continuous Drain Current Id: 47A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0077ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 36W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)
***ineon
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
Parte # Mfg. Descripción Valores Precio
BSC094N06LS5ATMA1
DISTI # BSC094N06LS5ATMA1-ND		Infineon Technologies AGMOSFET N-CHANNEL 60V 47A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.4328
BSC094N06LS5ATMA1
DISTI # BSC094N06LS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 8-Pin TDSON EP - Tape and Reel (Alt: BSC094N06LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.4259
  • 10000:$0.4099
  • 20000:$0.3949
  • 30000:$0.3819
  • 50000:$0.3749
BSC094N06LS5ATMA1
DISTI # 726-BSC094N06LS5ATMA		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		0
  • 1:$0.9800
  • 10:$0.8290
  • 100:$0.6360
  • 500:$0.5630
  • 1000:$0.4440
  • 5000:$0.3940
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Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de BSC094N06LS5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,97 US$
0,97 US$
10
0,83 US$
8,29 US$
100
0,64 US$
63,60 US$
500
0,56 US$
281,50 US$
1000
0,44 US$
444,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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