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T2G4005528-FS

T2G4005528-FS
Mfr. #:
T2G4005528-FS
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-3.5GHz 55 Watt 28V GaN Flangeless
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
T2G4005528-FS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
T2G4005528-FS más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HEMT
Tecnología:
GaN SiC
Ganar:
16 dB
Polaridad del transistor:
Canal N
Potencia de salida:
55 W
Embalaje:
Bandeja
Frecuencia de operación:
3.5 GHz
Serie:
T2G
Escribe:
GaN SiC HEMT
Marca:
Qorvo
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
100
Subcategoría:
Transistores
Parte # Alias:
1099993
Tags
T2G4005528-F, T2G4005, T2G4, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
GaN RF Power Transistor
***hardson RFPD
RF POWER TRANSISTOR GAN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
T2G4005528-FS
DISTI # 17364242		TriQuint SemiconductorRF POWER TRANSISTOR GAN18
  • 1:$127.5000
T2G4005528-FS
DISTI # 772-T2G4005528-FS		QorvoRF JFET Transistors DC-3.5GHz 55 Watt 28V GaN Flangeless
RoHS: Compliant		0
  • 100:$213.4000
T2G4005528-FS, EVAL BOARD
DISTI # 772-T2G4005528-FSEB		QorvoRF Development Tools DC-3.5GHz 55 Watt 28V GaN FS Eval Brd
RoHS: Compliant		0
  • 1:$875.0000
T2G4005528-FSTriQuint Semiconductor 162
    T2G4005528-FS2TriQuint Semiconductor 80
      1099993
      DISTI # T2G4005528-FS      		QorvoRF POWER TRANSISTOR
      RoHS: Compliant      		18
      • 1:$29.4800
      Imagen Parte # Descripción
      T2G4003532-FS

      Mfr.#: T2G4003532-FS

      OMO.#: OMO-T2G4003532-FS

      		 RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
      T2G4003532-FL

      Mfr.#: T2G4003532-FL

      OMO.#: OMO-T2G4003532-FL

      		 RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
      T2G4005528-FS

      Mfr.#: T2G4005528-FS

      OMO.#: OMO-T2G4005528-FS

      		 RF JFET Transistors DC-3.5GHz 55 Watt 28V GaN Flangeless
      T2G4003532-FL

      Mfr.#: T2G4003532-FL

      OMO.#: OMO-T2G4003532-FL-318

      		 RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
      T2G4003532-FS

      Mfr.#: T2G4003532-FS

      OMO.#: OMO-T2G4003532-FS-318

      		 RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
      T2G4005528-FS2

      Mfr.#: T2G4005528-FS2

      OMO.#: OMO-T2G4005528-FS2-1190

      		 Nuevo y original
      T2G4003532-FS, EVAL BOARD

      Mfr.#: T2G4003532-FS, EVAL BOARD

      OMO.#: OMO-T2G4003532-FS-EVAL-BOARD-1152

      		 RF Development Tools DC-3.5GHz 35 Watt 32V GaN FS Eval Brd
      T2G4005528

      Mfr.#: T2G4005528

      OMO.#: OMO-T2G4005528-1190

      		 Nuevo y original
      T2G4005528-FS-EVB2

      Mfr.#: T2G4005528-FS-EVB2

      OMO.#: OMO-T2G4005528-FS-EVB2-1190

      		 Nuevo y original
      T2G4005528FS

      Mfr.#: T2G4005528FS

      OMO.#: OMO-T2G4005528FS-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3500
      Ingrese la cantidad:
      El precio actual de T2G4005528-FS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      100
      213,40 US$
      21 340,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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