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SIB452DK-T1-GE3

SIB452DK-T1-GE3
Mfr. #:
SIB452DK-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 190V 1.5A SC75-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIB452DK-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIB452DK-GE3
Unidad de peso
0.003386 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR SC-75-6L
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PowerPAKR SC-75-6L Single
Configuración
Drenaje cuádruple simple de doble fuente
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
13W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
190V
Entrada-Capacitancia-Ciss-Vds
135pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
1.5A (Tc)
Rds-On-Max-Id-Vgs
2.4 Ohm @ 500mA, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
Puerta-Carga-Qg-Vgs
6.5nC @ 10V
Disipación de potencia Pd
2.4 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
15 ns
Hora de levantarse
16 ns
Vgs-Puerta-Fuente-Voltaje
16 V
Id-corriente-de-drenaje-continua
670 mA
Vds-Drain-Source-Breakdown-Voltage
190 V
Resistencia a la fuente de desagüe de Rds
2.4 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
30 ns
Tiempo de retardo de encendido típico
12 ns
Modo de canal
Mejora
Tags
SIB452DK, SIB452, SIB45, SIB4, SIB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIB452DK-T1-GE3 N-channel MOSFET Transistor; 0.67 A; 190 V; 6-Pin SC-75
***Components
Supplied as a Tape, N-Channel MOSFET, 670 mA, 190 V, 6-Pin SC-75 Vishay SIB452DK-T1-GE3
***ure Electronics
Single N-Channel 190 V 2.4 Ohms Surface Mount Power Mosfet - PowerPAK SC-75-6L
***et Europe
Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
***ical
Trans MOSFET N-CH 190V 1.5A 6-Pin PowerPAK SC-75 T/R
***i-Key
MOSFET N-CH 190V 1.5A SC75-6
***ronik
N-CH.-FET 1,5A 190V PPAK SC75-6
***
N-CHANNEL 190-V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:670Ma; Drain Source Voltage Vds:190V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:13W; No. Of Pins:6Pins Rohs Compliant: No
***nell
MOSFET, N-CH, 190V, 1.5A, PPAKSC75; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:190V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:13W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC75; No. of Pins:6; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 190V, 1.5A, PPAKSC75; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:190V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:13W; Transistor Case Style:PowerPAK SC75; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Parte # Mfg. Descripción Valores Precio
SIB452DK-T1-GE3
DISTI # V72:2272_09216871		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
RoHS: Compliant		2000
  • 1000:$0.2844
  • 500:$0.3444
  • 250:$0.3958
  • 100:$0.4002
  • 25:$0.4638
  • 10:$0.5153
  • 1:$0.6108
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 190V 1.5A SC75-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19310In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 190V 1.5A SC75-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19310In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 190V 1.5A SC75-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		18000In Stock
  • 3000:$0.3190
SIB452DK-T1-GE3
DISTI # 30571749		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
RoHS: Compliant		2000
  • 1000:$0.2844
  • 500:$0.3444
  • 250:$0.3958
  • 100:$0.4002
  • 26:$0.4638
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R (Alt: SIB452DK-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 50
  • 3000:€0.4799
  • 6000:€0.3269
  • 12000:€0.2819
  • 18000:€0.2599
  • 30000:€0.2419
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R - Tape and Reel (Alt: SIB452DK-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2829
  • 6000:$0.2749
  • 12000:$0.2639
  • 18000:$0.2559
  • 30000:$0.2489
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R (Alt: SIB452DK-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIB452DK-T1-GE3
    DISTI # 19X1929    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 1.5 A, 190 V, 1.8 ohm, 4.5 V, 1.5 V , RoHS Compliant: Yes2780
    • 1:$0.8000
    • 10:$0.6380
    • 25:$0.5870
    • 50:$0.5360
    • 100:$0.4850
    • 250:$0.4430
    • 500:$0.4000
    • 1000:$0.3200
    SIB452DK-T1-GE3.
    DISTI # 28AC2101    		Vishay IntertechnologiesN-CH PPAKSC75 190V 2.4 OHM @ 4.5V , ROHS COMPLIANT: NO0
    • 1:$0.2830
    • 6000:$0.2750
    • 12000:$0.2640
    • 18000:$0.2560
    • 30000:$0.2490
    SIB452DK-T1-GE3
    DISTI # 70616558    		Vishay SiliconixSIB452DK-T1-GE3 N-channel MOSFET Transistor,0.67 A,190 V,6-Pin SC-75
    RoHS: Compliant    		0
    • 300:$0.4200
    • 600:$0.3700
    • 1500:$0.3400
    • 3000:$0.2900
    SIB452DK-T1-GE3
    DISTI # 781-SIB452DK-T1-GE3    		Vishay IntertechnologiesMOSFET 190V Vds 16V Vgs PowerPAK SC-75
    RoHS: Compliant    		6525
    • 1:$0.8000
    • 10:$0.6380
    • 100:$0.4850
    • 500:$0.4000
    • 1000:$0.3200
    • 3000:$0.2900
    • 6000:$0.2710
    • 9000:$0.2610
    SIB452DK-T1-GE3
    DISTI # 8141253P    		Vishay IntertechnologiesTRANS MOSFET N-CH 190V 0.67A, RL5980
    • 60:£0.2530
    • 200:£0.2520
    • 400:£0.2510
    • 800:£0.2490
    SIB452DK-T1-GE3
    DISTI # C1S803601460440    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		2000
    • 250:$0.3956
    • 100:$0.3999
    • 25:$0.4635
    • 10:$0.5150
    SIB452DK-T1-GE3
    DISTI # 2364070    		Vishay IntertechnologiesMOSFET, N-CH, 190V, 1.5A, PPAKSC75
    RoHS: Compliant    		2775
    • 5:£0.4300
    • 25:£0.2700
    • 100:£0.2690
    • 250:£0.2680
    • 500:£0.2650
    SIB452DK-T1-GE3
    DISTI # 2364070    		Vishay IntertechnologiesMOSFET, N-CH, 190V, 1.5A, PPAKSC75
    RoHS: Compliant    		2775
    • 1:$1.2800
    • 10:$1.0100
    • 100:$0.7680
    • 500:$0.6340
    • 1000:$0.5070
    • 3000:$0.4590
    • 6000:$0.4290
    • 9000:$0.4130
    SIB452DK-T1-GE3Vishay IntertechnologiesMOSFET 190V Vds 16V Vgs PowerPAK SC-75
    RoHS: Compliant    		Americas - 18000
      Imagen Parte # Descripción
      SIB452DK-T1-GE3

      Mfr.#: SIB452DK-T1-GE3

      OMO.#: OMO-SIB452DK-T1-GE3

      		 MOSFET 190V Vds 16V Vgs PowerPAK SC-75
      SIB452DK-T1-GE3-CUT TAPE

      Mfr.#: SIB452DK-T1-GE3-CUT TAPE

      OMO.#: OMO-SIB452DK-T1-GE3-CUT-TAPE-1190

      		 Nuevo y original
      SIB452D

      Mfr.#: SIB452D

      OMO.#: OMO-SIB452D-1190

      		 Nuevo y original
      SIB452DK

      Mfr.#: SIB452DK

      OMO.#: OMO-SIB452DK-1190

      		 Nuevo y original
      SIB452DK-T1-GE3

      Mfr.#: SIB452DK-T1-GE3

      OMO.#: OMO-SIB452DK-T1-GE3-VISHAY

      		 MOSFET N-CH 190V 1.5A SC75-6
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de SIB452DK-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,36 US$
      0,36 US$
      10
      0,34 US$
      3,38 US$
      100
      0,32 US$
      31,98 US$
      500
      0,30 US$
      151,00 US$
      1000
      0,28 US$
      284,30 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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