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SI2301BDS-T1-GE3

SI2301BDS-T1-GE3
Mfr. #:
SI2301BDS-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET P-CH 20V 2.2A SOT23-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2301BDS-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI2301BDS-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI2301BDS-GE3
Unidad de peso
0.050717 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOT-23-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
700 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
40 ns
Hora de levantarse
40 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
2.2 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Resistencia a la fuente de desagüe de Rds
100 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
30 ns
Tiempo de retardo de encendido típico
20 ns
Modo de canal
Mejora
Tags
SI2301BDS-T1, SI2301BDS-T, SI2301BD, SI2301B, SI2301, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
***et Europe
Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 20V 2.2A SOT23-3
***ure Electronics
P-CHANNEL 2.5-V (G-S) MOSFET
***nell
P CHANNEL MOSFET
***ark
P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW ;RoHS Compliant: Yes
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2301BDS-T1-GE3
DISTI # V72:2272_09216783		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
  • 1:$0.4180
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.1875
SI2301BDS-T1-GE3
DISTI # 28976274		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 57:$0.2847
SI2301BDS-T1-GE3
DISTI # 84R8020		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Power Dissipation Pd:700mW, RoHS Compliant: Yes0
  • 1:$0.4400
  • 25:$0.3330
  • 50:$0.2910
  • 100:$0.2480
  • 250:$0.2260
  • 500:$0.2030
  • 1000:$0.1570
SI2301BDS-T1-GE3
DISTI # 33P5162		Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Product Range:-, RoHS Compliant: Yes0
  • 1:$0.1630
  • 3000:$0.1620
  • 6000:$0.1540
  • 12000:$0.1370
SI2301BDS-T1-GE3
DISTI # 781-SI2301BDS-GE3		Vishay IntertechnologiesMOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
RoHS: Compliant		10356
  • 1:$0.4400
  • 10:$0.3330
  • 100:$0.2480
  • 500:$0.2030
  • 1000:$0.1570
  • 3000:$0.1430
  • 6000:$0.1340
  • 9000:$0.1250
SI2301BDS-T1-GE3
DISTI # 1867173		Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant		0
  • 3000:£0.1390
SI2301BDS-T1-GE3
DISTI # C1S803601819123		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
Imagen Parte # Descripción
SI2301BDS-T1-E3

Mfr.#: SI2301BDS-T1-E3

OMO.#: OMO-SI2301BDS-T1-E3

 MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
SI2301BDS

Mfr.#: SI2301BDS

OMO.#: OMO-SI2301BDS-1190

 P CHANNEL MOSFET, FULL REEL
SI2301BDS-T-E3

Mfr.#: SI2301BDS-T-E3

OMO.#: OMO-SI2301BDS-T-E3-1190

 Nuevo y original
SI2301BDS-T1-E3 , MAX630

Mfr.#: SI2301BDS-T1-E3 , MAX630

OMO.#: OMO-SI2301BDS-T1-E3-MAX630-1190

 Nuevo y original
SI2301BDS-T1-ES

Mfr.#: SI2301BDS-T1-ES

OMO.#: OMO-SI2301BDS-T1-ES-1190

 Nuevo y original
SI2301BDS-T1-GE3 , MAX63

Mfr.#: SI2301BDS-T1-GE3 , MAX63

OMO.#: OMO-SI2301BDS-T1-GE3-MAX63-1190

 Nuevo y original
SI2301BDS-TI

Mfr.#: SI2301BDS-TI

OMO.#: OMO-SI2301BDS-TI-1190

 Nuevo y original
SI2301BDS-TI-E3

Mfr.#: SI2301BDS-TI-E3

OMO.#: OMO-SI2301BDS-TI-E3-1190

 Nuevo y original
SI2301BDS-T1-E3-CUT TAPE

Mfr.#: SI2301BDS-T1-E3-CUT TAPE

OMO.#: OMO-SI2301BDS-T1-E3-CUT-TAPE-1190

 Nuevo y original
SI2301BDS-T1-GE3

Mfr.#: SI2301BDS-T1-GE3

OMO.#: OMO-SI2301BDS-T1-GE3-VISHAY

 MOSFET P-CH 20V 2.2A SOT23-3
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de SI2301BDS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,14 US$
0,14 US$
10
0,13 US$
1,31 US$
100
0,12 US$
12,41 US$
500
0,12 US$
58,60 US$
1000
0,11 US$
110,30 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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