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IRFP4227PBF

IRFP4227PBF
Mfr. #:
IRFP4227PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 200V 65A 25mOhm 70nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFP4227PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFP4227PBF DatasheetIRFP4227PBF Datasheet (P4-P6)IRFP4227PBF Datasheet (P7-P8)
ECAD Model:
Más información:
IRFP4227PBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
65 A
Rds On - Resistencia de la fuente de drenaje:
25 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
70 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
330 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
20.7 mm
Longitud:
15.87 mm
Tipo de transistor:
1 N-Channel
Ancho:
5.31 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
49 S
Otoño:
31 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21 ns
Tiempo típico de retardo de encendido:
33 ns
Parte # Alias:
SP001560510
Unidad de peso:
1.340411 oz
Tags
IRFP422, IRFP42, IRFP4, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    RU

    Come!

    2019-06-26
    J***o
    J***o
    CO

    The product meets the characteristics described. thanks

    2019-06-17
***trelec
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
***ure Electronics
Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 65A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
IRFP4321PBF N-channel MOSFET Transistor, 78 A, 150 V, 3-Pin TO-247AC
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 310 W
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ure Electronics
Single N-Channel 150 V 15.5 Ohm 110 nC HEXFET® Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 150V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:78A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:330A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V
***itex
Transistor: N-MOSFET; unipolar; 200V; 94A; 0.023ohm; 580W; -55+175 deg.C; THT; TO247AC
***eco
Transistor MOSFET N Channel 200 Volt 94 Amp 3-Pin 3+ Tab TO-247AC
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 580 W
***ure Electronics
Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, 200V, 94A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:580W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:94A; Junction to Case Thermal Resistance A:0.26°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:TO-247AC; Power Dissipation Pd:580W; Power Dissipation Pd:580W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 360 W
***(Formerly Allied Electronics)
MOSFET, N Ch., 250V, 57A, 33 MOHM, 99 NC QG, TO-247AC, Pb-Free
***ure Electronics
Single N-Channel 250 V 33 mOhm 150 nC HEXFET® Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:300V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:120mW; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4332; Current Id Max:57A; Package / Case:TO-247AC; Power Dissipation Pd:120mW; Pulse Current Idm:230A; SMD Marking:120; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 200 V 0.055 Ohms Flange Mount Power Mosfet - TO-247AC
***ser
Single-Gate MOSFET Transistors N-Chan 200V 46 Amp
***ical
Trans MOSFET N-CH 200V 46A 3-Pin (3+Tab) TO-247AC
***(Formerly Allied Electronics)
Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:46A; On Resistance, Rds(on):550mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 250 V 0.075 Ohms Flange Mount Power Mosfet - TO-247AC
*** Source Electronics
Trans MOSFET N-CH 250V 38A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 250V 38A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 38A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N, 250V, 38A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:38A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:150A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds Max:250V
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-247AC
***roFlash
Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N, 200V, 20A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:20A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:80A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:150W; Power, Pd:150W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.83°C/W; Transistors, No. of:1; Voltage, Vds Max:200V
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descripción Valores Precio
IRFP4227PBF
DISTI # 21787623		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube1690
  • 7:$1.4679
IRFP4227PBF
DISTI # 30610361		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube244
  • 5:$5.3000
IRFP4227PBF
DISTI # 31273177		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube187
  • 38:$1.6875
IRFP4227PBF
DISTI # IRFP4227PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 65A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		429In Stock
  • 1000:$2.3243
  • 500:$2.7560
  • 100:$3.4035
  • 25:$3.7356
  • 1:$4.6500
IRFP4227PBF
DISTI # C1S327400137795		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		1019
  • 100:$2.3800
  • 50:$2.7000
  • 10:$3.2000
  • 1:$3.7900
IRFP4227PBF
DISTI # C1S322000492158		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		244
  • 100:$2.2500
  • 50:$2.3700
  • 10:$2.8700
  • 1:$4.2400
IRFP4227PBF
DISTI # IRFP4227PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP4227PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$2.5900
  • 10:$2.2900
  • 25:$2.2900
  • 50:$2.2900
  • 100:$2.0900
  • 500:$1.7900
  • 1000:$1.7900
IRFP4227PBF
DISTI # IRFP4227PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC (Alt: IRFP4227PBF)
RoHS: Compliant
Min Qty: 400		Asia - 0
    IRFP4227PBF
    DISTI # 88K4610    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 65A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:30V,MSL:- RoHS Compliant: Yes187
    • 1:$1.3500
    • 10:$1.3500
    • 25:$1.3500
    • 50:$1.3500
    • 100:$1.3500
    • 250:$1.3500
    • 500:$1.3500
    IRFP4227PBF.
    DISTI # 27AC6806    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 65A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:30V,MSL:- RoHS Compliant: Yes0
    • 1:$4.8700
    • 10:$4.1800
    • 25:$4.0200
    • 50:$3.7700
    • 100:$3.6100
    • 250:$3.4400
    • 500:$3.1200
    IRFP4227PBF
    DISTI # 70017930    		Infineon Technologies AGIRFP4227PBF N-channel MOSFET Transistor,65 A,200 V,3-Pin TO-247AC
    RoHS: Compliant    		0
    • 1:$4.3670
    IRFP4227PBF
    DISTI # 942-IRFP4227PBF    		Infineon Technologies AGMOSFET MOSFT 200V 65A 25mOhm 70nC Qg
    RoHS: Compliant    		797
    • 1:$4.0000
    • 10:$3.4000
    • 100:$2.9500
    • 250:$2.8000
    • 500:$2.5100
    IRFP4227PBFInfineon Technologies AGSingle N-Channel 200 V 25 mOhm 70 nC HEXFET Power Mosfet - TO-247AC
    RoHS: Compliant    		375Tube
    • 5:$2.3200
    • 50:$2.1200
    • 300:$1.7800
    IRFP4227PBFInternational Rectifier65A, 200V, 0.025OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC1
    • 2:$6.2000
    • 1:$9.3000
    IRFP4227PBFInfineon Technologies AG65A, 200V, 0.025OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC80
    • 36:$6.5305
    • 11:$7.0600
    • 1:$10.5900
    IRFP4227PBF
    DISTI # 6504772P    		Infineon Technologies AGMOSFET N-CHANNEL 200V 65A TO247AC, TU436
    • 13:£2.0000
    IRFP4227PBF
    DISTI # 6504772    		Infineon Technologies AGMOSFET N-CHANNEL 200V 65A TO247AC, EA111
    • 1:£3.1000
    • 13:£2.0000
    IRFP4227PBF
    DISTI # IRFP4227PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,65A,330W,TO247AC101
    • 1:$2.7800
    • 3:$2.5100
    • 10:$2.0800
    • 100:$1.8400
    IRFP4227PBF
    DISTI # IRFP4227PBF    		Infineon Technologies AGN-Ch 200V 65A 330W 0,025R TO247AC
    RoHS: Compliant    		495
    • 5:€2.5700
    • 25:€1.9700
    • 100:€1.7700
    • 200:€1.7100
    IRFP4227PBFInternational Rectifier 
    RoHS: Compliant    		Europe - 400
      IRFP4227PBFInfineon Technologies AG 270
        IRFP4227PBFInfineon Technologies AG 120
          IRFP4227PBF
          DISTI # 1298553          		Infineon Technologies AGMOSFET, N, 200V, TO-247
          RoHS: Compliant          		50
          • 1:£3.1600
          • 10:£2.0400
          • 100:£2.0100
          • 250:£1.9700
          • 500:£1.9400
          IRFP4227PBFInfineon Technologies AG200V,25m,65A,N-Channel Power MOSFET250
          • 1:$3.4900
          • 100:$2.9100
          • 500:$2.5700
          • 1000:$2.4900
          IRFP4227PBFInfineon Technologies AGRoHS(ship within 1day)100
          • 1:$5.3300
          • 10:$4.5400
          • 50:$3.9300
          • 100:$3.7600
          • 500:$3.6000
          • 1000:$3.5300
          IRFP4227PBF
          DISTI # 1298553          		Infineon Technologies AGMOSFET, N, 200V, TO-247
          RoHS: Compliant          		0
          • 1:$6.3400
          • 10:$5.3800
          • 100:$4.6800
          • 250:$4.4400
          • 500:$3.9700
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          Disponibilidad
          Valores:
          Available
          En orden:
          1985
          Ingrese la cantidad:
          El precio actual de IRFP4227PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          3,99 US$
          3,99 US$
          10
          3,39 US$
          33,90 US$
          100
          2,94 US$
          294,00 US$
          250
          2,79 US$
          697,50 US$
          500
          2,50 US$
          1 250,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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