2SK1306-E

Mfr. #:: 2SK1306-E
Fabricante:: Rochester Electronics, LLC
Descripción:: - Bulk (Alt: 2SK1306-E)
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: 2SK1306-E Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Tags: 2SK130, 2SK13, 2SK1, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK1306-E Descripción

***ical: Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220FM Box

***ponent Stockers USA: 15 A 100 V 0.18 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***el Nordic: Contact for details

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V

***eco: Transistor IRL530N N-Channel MOSFET 100V 12A TO-220

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 100 V 0.15 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB Tube

***akorn: MOSFET Transistor, N-Channel, TO-220AB

***roFlash: Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:63W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S

***itex: Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55+175 deg.C; THT; TO220

***eco: Transistor MOSFET N Channel 100 Volt 17 Amp 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 100V 17A 90mΩ 175°C TO-220 IRF530NPBF

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 100V 17A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***roFlash: Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***ure Electronics: Single N-Channel 100 V 70 W 37 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 79 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:17A; On Resistance Rds(On):0.09Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***(Formerly Allied Electronics): NTD6416ANT4G N-channel MOSFET Transistor; 17 A; 100 V; 3-Pin D-PAK

***ure Electronics: N-Channel 100 V 81 mOhm 71 W Surface Mount Power MOSFET -TO-252-3

***emi: Single N-Channel Power MOSFET 100V, 17A, 81mΩ

***ark: MOSFET,N CHANNEL,W DIODE,100V,17A,DPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***nell: MOSFET,N CH,W DIODE,100V,17A,DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 71W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***emi: P-Channel MOSFET, QFET®, -100V, -16.5A, 190mΩ

***Yang: Trans MOSFET P-CH 100V 16.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***ure Electronics: P-Channel 100 V 190 mOhm Flange Mount Mosfet - TO-220

***ment14 APAC: MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:16.5A; Source Voltage Vds:-100V; On Resistance Rds(on):0.14ohm;

*** Stop Electro: Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***nell: MOSFET, P, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 16.5A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.14ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 100W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: -16.5A; Device Marking: FQP17P10; Operating Temperature Min: -55°C; Pulse Current Idm: 66A; Termination Type: Through Hole; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V

***emi: N-Channel Shielded Gate PowerTrench® MOSFET 100V , 18A, 23mΩ

***ark: MOSFET, N CH, 100V, 0.0189OHM, 18A, MLP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0189ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
2SK1306-E DISTI # 2SK1306-E	Renesas Electronics Corporation	- Bulk (Alt: 2SK1306-E) Min Qty: 261 Container: Bulk	Americas - 0	1305:$1.1900 2610:$1.1900 522:$1.2900 783:$1.2900 261:$1.3900
2SK1306-E	Renesas Electronics Corporation	Power Field-Effect Transistor, 15A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	8	1000:$1.2600 500:$1.3300 100:$1.3800 25:$1.4400 1:$1.5600

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Disponibilidad

Valores:: Available
En orden:: 4500
Ingrese la cantidad:

El precio actual de 2SK1306-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,78 US$~~; ~~1,78 US$~~

10: ~~1,70 US$~~; ~~16,96 US$~~

100: ~~1,61 US$~~; ~~160,65 US$~~

500: ~~1,52 US$~~; ~~758,65 US$~~

1000: ~~1,43 US$~~; ~~1 428,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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2SK1306-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes