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STP11NM80

STP11NM80
Mfr. #:
STP11NM80
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STP11NM80 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STP11NM80 más información STP11NM80 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
11 A
Rds On - Resistencia de la fuente de drenaje:
400 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
150 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Embalaje:
Tubo
Altura:
9.15 mm
Longitud:
10.4 mm
Serie:
STP11NM80
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.6 mm
Marca:
STMicroelectronics
Transconductancia directa - Mín .:
8 S
Otoño:
15 ns
Tipo de producto:
MOSFET
Hora de levantarse:
17 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
46 ns
Tiempo típico de retardo de encendido:
22 ns
Unidad de peso:
0.050717 oz
Tags
STP11NM8, STP11NM, STP11N, STP11, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in TO-220
***ical
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 800V 11A MDMESH TO220
***ark
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
***ure Electronics
N-Channel 600 V 0.299 Ohm Falnge Mount FDmesh™ II MosFet - TO-220
***ical
Trans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Tube
***ponent Stockers USA
14 A 600 V 0.299 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 14A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***ark
Mosfet Transistor, N Channel, 13 A, 600 V, 550 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
***icroelectronics
N-Channel 600 V, 0.48 Ohm, 13 A TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
***th Star Micro
Transistor MOSFET N-CH 600V 13A 3-Pin (3+Tab) TO-220 Tube
***ure Electronics
STP13NK60 Series 600 V 13 A 550 mOhm Through Hole N-Ch Power MOSFET - TO-220-3
***ponent Stockers USA
13 A 600 V 0.55 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220
***roFlash
Mosfet Transistor, N Channel, 12 A, 650 V, 0.23 Ohm, 10 V, 4 V Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N CH, 650V, 12A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220
***r Electronics
Power Field-Effect Transistor, 14A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 800V, 14A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; P
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220
***ure Electronics
Single N-Channel 600 V 0.65 Ohm 34 nC 240 W DMOS Flange Mount Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,12A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:240W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM II, 600V, 10A, 750mΩ, TO-220
***Yang
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,10A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:185W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STP11NM80
DISTI # 497-4369-5-ND		STMicroelectronicsMOSFET N-CH 800V 11A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2500:$2.9327
  • 500:$3.6603
  • 100:$4.2998
  • 50:$4.9612
  • 10:$5.2480
  • 1:$5.8400
STP11NM80
DISTI # V99:2348_18460714		STMicroelectronicsTrans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
    STP11NM80
    DISTI # STP11NM80    		STMicroelectronicsTrans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220 Tube (Alt: STP11NM80)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€1.7400
    • 500:€1.7800
    • 250:€1.9500
    • 100:€2.0600
    • 10:€2.1700
    • 1:€4.7100
    STP11NM80
    DISTI # STP11NM80    		STMicroelectronicsTrans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP11NM80)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$2.5900
    • 6000:$2.6900
    • 4000:$2.7900
    • 2000:$2.9900
    • 1000:$3.0900
    STP11NM80
    DISTI # 57P1858    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$2.7300
    • 250:$2.8200
    • 100:$3.3600
    • 50:$3.8900
    • 25:$4.1400
    • 10:$4.7300
    • 1:$5.4600
    STP11NM80
    DISTI # 511-STP11NM80    		STMicroelectronicsMOSFET N-Ch 800 Volt 11 Amp Power MDmesh
    RoHS: Compliant    		0
    • 1:$5.5500
    • 10:$4.7200
    • 100:$4.0900
    • 250:$3.8800
    • 500:$3.4800
    • 1000:$2.9400
    • 2000:$2.7900
    STP11NM80
    DISTI # 6875235    		STMicroelectronicsMOSFET N-CHANNEL 800V 11A MDMESH TO220, EA38
    • 500:£2.6200
    • 150:£3.0700
    • 50:£3.3000
    • 10:£3.5600
    • 1:£4.4700
    STP11NM80
    DISTI # 6875235P    		STMicroelectronicsMOSFET N-CHANNEL 800V 11A MDMESH TO220, TU142
    • 500:£2.6200
    • 150:£3.0700
    • 50:£3.3000
    • 10:£3.5600
    STP11NM80
    DISTI # STP11NM80    		STMicroelectronicsTransistor: N-MOSFET,unipolar,800V,11A,150W,TO220-33
    • 100:$2.0900
    • 25:$2.2800
    • 10:$2.6400
    • 3:$3.2200
    • 1:$3.6100
    STP11NM80
    DISTI # TMOSP7703    		STMicroelectronicsN-CH 800V11A400mOhm TO220-3
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 1000:$1.5600
    STP11NM80STMicroelectronicsMOSFET N-CH 800V 11A TO-22020
    • 1:$1.7500
    • 100:$1.6100
    • 500:$1.4900
    • 1000:$1.4000
    STP11NM80
    DISTI # 9512730    		STMicroelectronicsMOSFET, N, TO-220180
    • 500:£2.6600
    • 250:£2.9600
    • 100:£3.1200
    • 10:£3.6000
    • 1:£4.7000
    STP11NM80
    DISTI # 9512730    		STMicroelectronicsMOSFET, N, TO-220
    RoHS: Compliant    		980
    • 2000:$4.2000
    • 1000:$4.4300
    • 500:$5.2400
    • 250:$5.8500
    • 100:$6.1600
    • 10:$7.1100
    • 1:$8.3600
    Imagen Parte # Descripción
    STRVS185X02B

    Mfr.#: STRVS185X02B

    OMO.#: OMO-STRVS185X02B

    		 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 185V Ipp 2A
    STRVS280X02F

    Mfr.#: STRVS280X02F

    OMO.#: OMO-STRVS280X02F

    		 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
    STRVS185X02B

    Mfr.#: STRVS185X02B

    OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

    		 TVS DIODE 128V 185V SMB
    STRVS280X02F

    Mfr.#: STRVS280X02F

    OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS

    		 TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de STP11NM80 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,55 US$
    5,55 US$
    10
    4,72 US$
    47,20 US$
    100
    4,09 US$
    409,00 US$
    250
    3,88 US$
    970,00 US$
    500
    3,48 US$
    1 740,00 US$
    1000
    2,94 US$
    2 940,00 US$
    2000
    2,79 US$
    5 580,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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