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IPB03N03LAG

IPB03N03LAG
Mfr. #:
IPB03N03LAG
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB03N03LAG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPB03N03LA, IPB03N, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
MOSFET N-CH 25V 80A TO-263
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ponent Stockers USA
80 A 25 V 0.0064 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***et
Trans MOSFET N-CH 25V 80A 3-Pin TO-263
***el Electronic
Power Field-Effect Transistor, 80A I(D), 25V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ
***r Electronics
Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***i-Key
MOSFET N-CH 30V 75A D2PAK
*** Electronic Components
MOSFET N-Ch UltraFET Logic Level
***et
TO263AB,SINGLE,NCH,30V,0,0032 OHM LOGIC LVL PWM OPT ULTR
***emi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***et Europe
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ineon SCT
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***emi
N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ
***ical
Trans MOSFET N-CH 30V 19A Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 19A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Parte # Mfg. Descripción Valores Precio
IPB03N03LA G
DISTI # IPB03N03LAGINTR-ND		Infineon Technologies AGMOSFET N-CH 25V 80A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB03N03LA G
    DISTI # IPB03N03LAGINCT-ND    		Infineon Technologies AGMOSFET N-CH 25V 80A TO-263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB03N03LA G
      DISTI # IPB03N03LAGINDKR-ND      		Infineon Technologies AGMOSFET N-CH 25V 80A TO-263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB03N03LA G
        DISTI # 726-IPB03N03LAG        		Infineon Technologies AGMOSFET N-Ch 25V 80A D2PAK-2
        RoHS: Compliant        		0
          IPB03N03LAGInfineon Technologies AGPower Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant          		1000
          • 1000:$0.9200
          • 500:$0.9700
          • 100:$1.0100
          • 25:$1.0500
          • 1:$1.1300
          Imagen Parte # Descripción
          IPB034N06L3GATMA1

          Mfr.#: IPB034N06L3GATMA1

          OMO.#: OMO-IPB034N06L3GATMA1

          		 MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
          IPB030N08N3 G

          Mfr.#: IPB030N08N3 G

          OMO.#: OMO-IPB030N08N3-G

          		 MOSFET N-Ch 80V 160A D2PAK-6 OptiMOS 3
          IPB035N08N3 G

          Mfr.#: IPB035N08N3 G

          OMO.#: OMO-IPB035N08N3-G

          		 MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
          IPB031NE7N3 G

          Mfr.#: IPB031NE7N3 G

          OMO.#: OMO-IPB031NE7N3-G-1190

          		 Trans MOSFET N-CH 75V 100A 3-Pin TO-263 T/R - Bulk (Alt: IPB031NE7N3 G)
          IPB034N03LGATMA1

          Mfr.#: IPB034N03LGATMA1

          OMO.#: OMO-IPB034N03LGATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 80A TO-263-3
          IPB034N06L3G

          Mfr.#: IPB034N06L3G

          OMO.#: OMO-IPB034N06L3G-1190

          		 60V,3.4m��,90A,N-Channel Power MOSFET
          IPB038N12N3G 038N12N

          Mfr.#: IPB038N12N3G 038N12N

          OMO.#: OMO-IPB038N12N3G-038N12N-1190

          		 Nuevo y original
          IPB039N04LG

          Mfr.#: IPB039N04LG

          OMO.#: OMO-IPB039N04LG-1190

          		 Nuevo y original
          IPB039N10N3GATMA1 , 2SD1

          Mfr.#: IPB039N10N3GATMA1 , 2SD1

          OMO.#: OMO-IPB039N10N3GATMA1-2SD1-1190

          		 Nuevo y original
          IPB039N10N3 G

          Mfr.#: IPB039N10N3 G

          OMO.#: OMO-IPB039N10N3-G-126

          		 IGBT Transistors MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
          Disponibilidad
          Valores:
          Available
          En orden:
          5500
          Ingrese la cantidad:
          El precio actual de IPB03N03LAG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          1,38 US$
          1,38 US$
          10
          1,31 US$
          13,11 US$
          100
          1,24 US$
          124,20 US$
          500
          1,17 US$
          586,50 US$
          1000
          1,10 US$
          1 104,00 US$
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