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FS75R12KT4B11BOSA1

FS75R12KT4B11BOSA1
Mfr. #:
FS75R12KT4B11BOSA1
Fabricante:
Infineon Technologies
Descripción:
MOD IGBT LOW PWR ECONO2-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FS75R12KT4B11BOSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FS75R12KT4, FS75R12KT, FS75R12K, FS75R12, FS75R1, FS75R, FS75, FS7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 75A 25-pin ECONO2-6
***ical
Trans IGBT Module N-CH 1.2KV 75A 25-Pin Tray
***Components
IGBT Module N-CH 1.2KV 75A AG-ECONO2-6
***i-Key
MOD IGBT LOW PWR ECONO2-6
***ronik
6-PACK 1200V 75A EconoPACK2Fit
***et
LOW POWER ECONO
***ark
Igbt, Module, N-Ch, 1.2Kv, 75A; Transistor Polarity:n Channel; Dc Collector Current:75A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:385W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
IGBT, MODULE, N-CH, 1.2KV, 75A; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:385W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPACK 2 Series; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, MODULO, CA-N, 1.2KV, 75A; Polarità Transistor:Canale N; Corrente di Collettore CC:75A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:385W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EconoPACK 2 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EconoPACK 2 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; Al(2)O(3) Substrate with Low Thermal Resistance; High Power and Thermal Cycling Capability; Integrated NTC temperature sensor; Copper Base Plate; Standard Housing | Benefits: Compact module concept; Optimized development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
Parte # Mfg. Descripción Valores Precio
FS75R12KT4B11BOSA1
DISTI # V36:1790_17558396		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 75A 25-Pin Tray
RoHS: Compliant		0
  • 10000:$78.6100
  • 5000:$78.6300
  • 1000:$83.4900
  • 100:$96.6800
  • 10:$99.2100
FS75R12KT4B11BOSA1
DISTI # FS75R12KT4B11BOSA1-ND		Infineon Technologies AGMOD IGBT LOW PWR ECONO2-6
RoHS: Compliant
Min Qty: 10
Container: Tray		Temporarily Out of Stock
  • 10:$99.2070
FS75R12KT4B11BOSA1
DISTI # FS75R12KT4B11BOSA1		Infineon Technologies AGLOW POWER ECONO - Trays (Alt: FS75R12KT4B11BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 100:$81.2900
  • 60:$83.2900
  • 40:$85.3900
  • 20:$87.5900
  • 10:$88.7900
FS75R12KT4B11BOSA1
DISTI # FS75R12KT4B11BOSA1		Infineon Technologies AGLOW POWER ECONO - Bulk (Alt: FS75R12KT4B11BOSA1)
RoHS: Compliant
Min Qty: 4
Container: Bulk		Americas - 0
  • 40:$79.9900
  • 20:$81.3900
  • 12:$84.2900
  • 8:$87.3900
  • 4:$90.6900
FS75R12KT4_B11
DISTI # 641-FS75R12KT4_B11		Infineon Technologies AGIGBT Modules IGBT 1200V 75A4
  • 1:$107.9800
  • 5:$105.9900
  • 10:$101.2200
  • 25:$97.8500
FS75R12KT4B11BOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
RoHS: Compliant		20
  • 1000:$82.8800
  • 500:$87.2400
  • 100:$90.8300
  • 25:$94.7200
  • 1:$102.0100
FS75R12KT4B11BOSA1
DISTI # 2781265		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 75A
RoHS: Compliant		8
  • 10:$145.2000
  • 5:$150.3800
  • 1:$155.9500
FS75R12KT4B11BOSA1
DISTI # 2781265		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 75A9
  • 10:£71.5500
  • 5:£73.0400
  • 1:£74.5300
Imagen Parte # Descripción
FS75R12KT4_B15

Mfr.#: FS75R12KT4_B15

OMO.#: OMO-FS75R12KT4-B15

 IGBT Modules IGBT 1200V 75A
FS75R12KT3

Mfr.#: FS75R12KT3

OMO.#: OMO-FS75R12KT3

 IGBT Modules N-CH 1.2KV 105A
FS75R12KT3G

Mfr.#: FS75R12KT3G

OMO.#: OMO-FS75R12KT3G

 IGBT Modules N-CH 1.2KV 100A
FS75R12KT4B15BOSA1

Mfr.#: FS75R12KT4B15BOSA1

OMO.#: OMO-FS75R12KT4B15BOSA1-INFINEON-TECHNOLOGIES

 IGBT MODULE 1200V 75A
FS75R12KT3G

Mfr.#: FS75R12KT3G

OMO.#: OMO-FS75R12KT3G-1190

 Trans IGBT Module N-CH 1.2KV 100A 42-pin ECONO3-4 (Alt: FS75R12KT3G)
FS75R12KT3GBOSA1

Mfr.#: FS75R12KT3GBOSA1

OMO.#: OMO-FS75R12KT3GBOSA1-INFINEON-TECHNOLOGIES

 MOD IGBT LOW PWR ECONO3-4
FS75R12KT4

Mfr.#: FS75R12KT4

OMO.#: OMO-FS75R12KT4-1190

 Nuevo y original
FS75R12KT4-B15

Mfr.#: FS75R12KT4-B15

OMO.#: OMO-FS75R12KT4-B15-1190

 Nuevo y original
FS75R12KT4_B11

Mfr.#: FS75R12KT4_B11

OMO.#: OMO-FS75R12KT4-B11-125

 IGBT Modules IGBT 1200V 75A
FS75R12KT3BOSA1

Mfr.#: FS75R12KT3BOSA1

OMO.#: OMO-FS75R12KT3BOSA1-INFINEON-TECHNOLOGIES

 Trans IGBT Module N-CH 1200V 105A 355000mW 28-Pin AG-ECONO2-6 Tray
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de FS75R12KT4B11BOSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
112,02 US$
112,02 US$
10
106,42 US$
1 064,19 US$
100
100,82 US$
10 081,80 US$
500
95,22 US$
47 608,50 US$
1000
89,62 US$
89 616,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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