OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IKW20N60H3FKSA1

IKW20N60H3FKSA1
Mfr. #:
IKW20N60H3FKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 600V 20A 170W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKW20N60H3FKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.95 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
40 A
Pd - Disipación de energía:
170 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
HighSpeed 3
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKW20N60H3 IKW2N6H3XK SP000702556
Unidad de peso:
0.191185 oz
Tags
IKW20N60H3, IKW20N60H, IKW20N6, IKW20N, IKW20, IKW2, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IKW20N60H3 Series 600 V 40 A Third Generation High Speed Switching - TO-247-3
***ineon SCT
High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS
***ment14 APAC
IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:170W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Transistor Case Style:TO-247; No. of Pins:3; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:170W
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***p One Stop
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
*** Electronic Components
IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
***(Formerly Allied Electronics)
IGBT N-Ch 600V 20A High-Speed TO247
***ment14 APAC
IGBT, 600V, 40A, 175DEG C, 167W;
***ical
Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Rail
***ure Electronics
FGH20N60SFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
*** Source Electronics
High current capability, High input impedance | IGBT 600V 40A 165W TO247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Tube
***ure Electronics
FGH20N60UFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W
***ical
Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW20N60T Series 600 V 40 A Through Hole TRENCHSTOP™ IGBT -PG-TO247-3
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, N, 600V, 20A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.05V; Power Dissipation Pd: 166W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; Operating Temper
***ark
IGBT, N, 600V, 20A, TO-247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.05V; Power Dissipation:166W; Case Style:TO-247; Termination Type:Through Hole; Transistor Polarity:N; RoHS Compliant: Yes
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 20 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 166 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ark
Igbt Single Transistor, 40 A, 2 V, 165 W, 600 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247 Rail
***nell
IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
***rchild Semiconductor
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Parte # Mfg. Descripción Valores Precio
IKW20N60H3FKSA1
DISTI # V99:2348_06377079		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 1200:$2.0960
  • 720:$2.3250
  • 240:$2.3970
  • 10:$2.7020
  • 1:$3.0760
IKW20N60H3FKSA1
DISTI # IKW20N60H3FKSA1-ND		Infineon Technologies AGIGBT 600V 40A 170W TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		958In Stock
  • 1200:$2.2218
  • 720:$2.5871
  • 240:$2.9947
  • 10:$3.5990
  • 1:$3.9700
IKW20N60H3FKSA1
DISTI # 31259425		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1680
  • 100:$2.5056
  • 10:$2.8992
IKW20N60H3FKSA1
DISTI # 31240600		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$2.3970
  • 10:$2.7020
  • 4:$3.0760
IKW20N60H3FKSA1
DISTI # IKW20N60H3FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW20N60H3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$1.8900
  • 480:$1.7900
  • 960:$1.6900
  • 1440:$1.6900
  • 2400:$1.6900
IKW20N60H3FKSA1
DISTI # 13T9446		Infineon Technologies AGIGBT+ DIODE,600V,20A,TO247,DC Collector Current:20A,Collector Emitter Saturation Voltage Vce(on):2.4V,Power Dissipation Pd:170W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,MSL:- RoHS Compliant: Yes0
    IKW20N60H3
    DISTI # 726-IKW20N60H3    		Infineon Technologies AGIGBT Transistors 600V 20A 170W
    RoHS: Compliant    		709
    • 1:$3.5500
    • 10:$3.0200
    • 100:$2.6100
    IKW20N60H3FKSA1
    DISTI # 726-IKW20N60H3FKSA1    		Infineon Technologies AGIGBT Transistors 600V 20A 170W
    RoHS: Compliant    		220
    • 1:$3.5500
    • 10:$3.0200
    • 100:$2.6100
    IKW20N60H3FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant    		480
    • 1000:$1.5100
    • 500:$1.5900
    • 100:$1.6600
    • 25:$1.7300
    • 1:$1.8600
    IKW20N60H3FKSA1
    DISTI # 8922197P    		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 600V 40A TO247, TU312
    • 40:£2.1080
    • 80:£1.9650
    • 200:£1.8230
    • 600:£1.7300
    IKW20N60H3FKSA1
    DISTI # 8922197    		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 600V 40A TO247, PK104
    • 4:£2.6580
    • 40:£2.1080
    • 80:£1.9650
    • 200:£1.8230
    • 600:£1.7300
    IKW20N60H3FKSA1
    DISTI # C1S322000569627    		Infineon Technologies AGIGBT Chip
    RoHS: Compliant    		240
    • 240:$2.0800
    IKW20N60H3FKSA1
    DISTI # 1832341    		Infineon Technologies AGIGBT+ DIODE,600V,20A,TO247
    RoHS: Compliant    		0
    • 1:$5.6200
    • 10:$4.7800
    • 100:$4.1300
    Imagen Parte # Descripción
    NTHL082N65S3F

    Mfr.#: NTHL082N65S3F

    OMO.#: OMO-NTHL082N65S3F

    		 MOSFET SUPERFET3 650V TO247 N-CHANNEL
    IPW90R120C3

    Mfr.#: IPW90R120C3

    OMO.#: OMO-IPW90R120C3

    		 MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3
    7466205R

    Mfr.#: 7466205R

    OMO.#: OMO-7466205R

    		 Terminals WP-THRSH Type C M5 Thread
    3522200KFT

    Mfr.#: 3522200KFT

    OMO.#: OMO-3522200KFT

    		 Thick Film Resistors - SMD 3522 200K 1% 3W
    7460307

    Mfr.#: 7460307

    OMO.#: OMO-7460307

    		 Terminals WP-BUTR Pin-Plate 8Pin 2Row M4 160A
    1729128

    Mfr.#: 1729128

    OMO.#: OMO-1729128-PHOENIX-CONTACT

    		 Conn PC Terminal Block 2 POS 5.08mm Solder ST Thru-Hole 13.5A
    NTHL082N65S3F

    Mfr.#: NTHL082N65S3F

    OMO.#: OMO-NTHL082N65S3F-ON-SEMICONDUCTOR

    		 SUPERFET3 650V TO247
    C3216X7S2A225K160AB

    Mfr.#: C3216X7S2A225K160AB

    OMO.#: OMO-C3216X7S2A225K160AB-TDK

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 2.2uF 100volts X7S 10%
    IPW90R120C3

    Mfr.#: IPW90R120C3

    OMO.#: OMO-IPW90R120C3-1190

    		 Trans MOSFET N-CH 900V 36A 3-Pin(3+Tab) TO-247
    7460307

    Mfr.#: 7460307

    OMO.#: OMO-7460307-WURTH-ELECTRONICS

    		 TERM PWR ELEMENT M4 8 PIN PCB
    Disponibilidad
    Valores:
    431
    En orden:
    2414
    Ingrese la cantidad:
    El precio actual de IKW20N60H3FKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,54 US$
    3,54 US$
    10
    3,01 US$
    30,10 US$
    100
    2,61 US$
    261,00 US$
    250
    2,47 US$
    617,50 US$
    500
    2,22 US$
    1 110,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    More Newest Products
    Top