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NGTB30N135IHR1WG

NGTB30N135IHR1WG
Mfr. #:
NGTB30N135IHR1WG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors 1350V/30A IGBT FSII
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTB30N135IHR1WG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB30N135IHR1WG DatasheetNGTB30N135IHR1WG Datasheet (P4-P6)NGTB30N135IHR1WG Datasheet (P7-P9)
ECAD Model:
Más información:
NGTB30N135IHR1WG más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1.35 kV
Voltaje de saturación colector-emisor:
2.6 V
Voltaje máximo del emisor de puerta:
25 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
394 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
EN Semiconductor
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
1.340411 oz
Tags
NGTB30N1, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1350V 60A 394000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
In a Pack of 2, ON Semiconductor NGTB30N135IHR1WG IGBT, 60 A 1350 V, 3-Pin TO-247
***emi
IGBT, 1350V 30A with Monolithic Free Wheeling Diode.
***ark
Igbt, Single, N-Ch, 1.35Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.4V; Power Dissipation Pd:394W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 60A 305000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***or
IRG8P40N120 - DISCRETE IGBT WITH
***ark
G8, 1200V, 40A, COPAK-247AC, TUBE
***el Electronic
CAP CER 4PF 100V C0G/NP0 RADIAL
***icroelectronics
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode
***et
Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247
*** Electronic Components
IGBT Transistors 30A 1200V short circuit rugged IGBT
***ical
Trans IGBT Chip N-CH 1000V 60A 412000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ark
Transistor, Igbt, 1Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:412W; Collector Emitter Voltage V(Br)Ceo:1Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N=-CH 1500V 60A 500000mW 3-Pin(3+Tab) TO-247 Rail
***ark
1500V 30A FS SA Trench IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conductionand switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247AB Rail
***et
IGBT Transistors N-CH/1200V 30A FS Trench
***i-Key
IGBT 1200V 60A 339W TO247
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
***i-Key Marketplace
N-CHANNEL IGBT
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***ark
1200V/25 Fast Igbt Only Fsii To-247 / Tube
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Parte # Mfg. Descripción Valores Precio
NGTB30N135IHR1WG
DISTI # V99:2348_14070698		ON SemiconductorTrans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		77
  • 500:$2.9730
  • 250:$3.3190
  • 100:$3.4290
  • 10:$4.0250
  • 1:$5.2008
NGTB30N135IHR1WG
DISTI # V36:1790_14070698		ON SemiconductorTrans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    NGTB30N135IHR1WG
    DISTI # NGTB30N135IHR1WGOS-ND    		ON SemiconductorIGBT 1350V 30A TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		84In Stock
    • 2520:$1.4112
    • 510:$1.7569
    • 120:$2.0639
    • 30:$2.3813
    • 10:$2.5190
    • 1:$2.8000
    NGTB30N135IHR1WG
    DISTI # 30184893    		ON SemiconductorTrans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		180
    • 180:$2.6106
    NGTB30N135IHR1WG
    DISTI # 25887315    		ON SemiconductorTrans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		77
    • 3:$5.2008
    NGTB30N135IHR1WG
    DISTI # 30613139    		ON SemiconductorTrans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		18
    • 12:$2.2500
    NGTB30N135IHR1WG
    DISTI # NGTB30N135IHR1WG    		ON SemiconductorTrans IGBT Chip N-CH 1350V 60A 3-Pin TO-247 T/R (Alt: NGTB30N135IHR1WG)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 50:€1.2900
    • 100:€1.2900
    • 500:€1.2900
    • 1000:€1.2900
    • 25:€1.4900
    • 10:€1.6900
    • 1:€2.0900
    NGTB30N135IHR1WG
    DISTI # NGTB30N135IHR1WG    		ON SemiconductorTrans IGBT Chip N-CH 1350V 60A 3-Pin TO-247 T/R - Rail/Tube (Alt: NGTB30N135IHR1WG)
    RoHS: Compliant
    Min Qty: 180
    Container: Tube    		Americas - 0
    • 540:$1.1900
    • 900:$1.1900
    • 1800:$1.1900
    • 180:$1.2900
    • 360:$1.2900
    NGTB30N135IHR1WG
    DISTI # 81Y3909    		ON Semiconductor1350V/30A IGBT FSII TO-24 / TUBE0
    • 1000:$3.2800
    • 500:$3.4800
    • 250:$3.7300
    • 100:$4.0500
    • 1:$4.9200
    NGTB30N135IHR1WG
    DISTI # 863-NGTB30N135IHR1WG    		ON SemiconductorIGBT Transistors 1350V/30A IGBT FSII
    RoHS: Compliant    		209
    • 1:$4.7600
    • 10:$4.0500
    • 100:$3.5100
    • 250:$3.3300
    • 500:$2.9800
    NGTB30N135IHR1WG
    DISTI # 9229550P    		ON SemiconductorIGBT & FW DIODE 1350V 30A TO-247, TU78
    • 300:£2.5050
    • 100:£2.6350
    • 40:£2.8350
    • 10:£3.0350
    NGTB30N135IHR1WG
    DISTI # 2706268    		ON SemiconductorIGBT, SINGLE, N-CH, 1.35KV, 60A, TO-247
    RoHS: Compliant    		0
    • 2520:$3.8000
    • 510:$4.7300
    • 120:$5.5600
    • 30:$6.4100
    • 10:$6.7800
    • 1:$7.5500
    NGTB30N135IHR1WG
    DISTI # 2706268    		ON SemiconductorIGBT, SINGLE, N-CH, 1.35KV, 60A, TO-2476
    • 500:£2.3000
    • 250:£2.5800
    • 100:£2.7100
    • 10:£3.1200
    • 1:£4.0900
    Imagen Parte # Descripción
    DB2232000L

    Mfr.#: DB2232000L

    OMO.#: OMO-DB2232000L

    		 Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 1.6x3.5mm
    UCC27519DBVT

    Mfr.#: UCC27519DBVT

    OMO.#: OMO-UCC27519DBVT

    		 Gate Drivers 4A/4A Sgl Ch Hi-Spd Low-side Gate Driver
    SMAJ13A

    Mfr.#: SMAJ13A

    OMO.#: OMO-SMAJ13A

    		 TVS Diodes / ESD Suppressors 400W 13V 5% Uni-Directional
    DZ2S130M0L

    Mfr.#: DZ2S130M0L

    OMO.#: OMO-DZ2S130M0L

    		 Zener Diodes 13V 2.5% 150mW FLT LD 0.8x1.6mm
    APT30D120BCTG

    Mfr.#: APT30D120BCTG

    OMO.#: OMO-APT30D120BCTG

    		 Rectifiers FG, FRED, 1200V, 30A, TO-247, RoHS
    BU4S584G2-TR

    Mfr.#: BU4S584G2-TR

    OMO.#: OMO-BU4S584G2-TR

    		 Inverters IC SCHMITT TRIGGER SINGLE
    EKZN250ELL151MF11D

    Mfr.#: EKZN250ELL151MF11D

    OMO.#: OMO-EKZN250ELL151MF11D

    		 Aluminum Electrolytic Capacitors - Radial Leaded 25V 150uF 20% Tol.
    ERJ-6GEYJ681V

    Mfr.#: ERJ-6GEYJ681V

    OMO.#: OMO-ERJ-6GEYJ681V

    		 Thick Film Resistors - SMD 0805 680ohms 5% AEC-Q200
    1-1318301-5

    Mfr.#: 1-1318301-5

    OMO.#: OMO-1-1318301-5

    		 Headers & Wire Housings 5P EP PIN HSG
    APT30D120BCTG

    Mfr.#: APT30D120BCTG

    OMO.#: OMO-APT30D120BCTG-MICROSEMI

    		 Rectifiers
    Disponibilidad
    Valores:
    209
    En orden:
    2192
    Ingrese la cantidad:
    El precio actual de NGTB30N135IHR1WG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,76 US$
    4,76 US$
    10
    4,05 US$
    40,50 US$
    100
    3,51 US$
    351,00 US$
    250
    3,33 US$
    832,50 US$
    500
    2,98 US$
    1 490,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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