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SI8489EDB-T2-E1

SI8489EDB-T2-E1
Mfr. #:
SI8489EDB-T2-E1
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI8489EDB-T2-E1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SI8489EDB-T2-E1 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET MICROPIE
Paquete-Estuche
4-UFBGA
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
4-Microfoot
Configuración
Único
Tipo FET
Canal P MOSFET, óxido metálico
Potencia máxima
780mW
Tipo transistor
1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
765pF @ 10V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
-
Rds-On-Max-Id-Vgs
44 mOhm @ 1.5A, 10V
Vgs-th-Max-Id
1.2V @ 250μA
Puerta-Carga-Qg-Vgs
27nC @ 10V
Disipación de potencia Pd
900 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
25 ns
Hora de levantarse
20 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
- 700 mA
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Vgs-th-Gate-Source-Threshold-Voltage
- 0.5 V to - 1.2 V
Resistencia a la fuente de desagüe de Rds
44 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
50 ns
Tiempo de retardo de encendido típico
27 ns
Qg-Gate-Charge
9.5 nC
Transconductancia directa-Mín.
10 S
Tags
SI848, SI84, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI8489EDB-T2-E1 P-channel MOSFET Transistor; 4.3 A; 20 V; 4-Pin MICRO FOOT
***et
Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
***ronik
P-CH 20V 5,4A 36mOhm MICROFOOT
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descripción Valores Precio
SI8489EDB-T2-E1
DISTI # V72:2272_09216538		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
RoHS: Compliant		4770
  • 3000:$0.1492
  • 1000:$0.1535
  • 500:$0.1906
  • 250:$0.2240
  • 100:$0.2266
  • 25:$0.2848
  • 10:$0.2883
  • 1:$0.3521
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1TR-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1749
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1CT-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1976
  • 500:$0.2557
  • 100:$0.3487
  • 10:$0.4650
  • 1:$0.5500
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1DKR-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1976
  • 500:$0.2557
  • 100:$0.3487
  • 10:$0.4650
  • 1:$0.5500
SI8489EDB-T2-E1
DISTI # 30195830		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
RoHS: Compliant		4770
  • 3000:$0.1492
  • 1000:$0.1535
  • 500:$0.1906
  • 250:$0.2240
  • 100:$0.2266
  • 49:$0.2848
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8489EDB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1489
  • 6000:$0.1439
  • 12000:$0.1389
  • 18000:$0.1349
  • 30000:$0.1309
SI8489EDB-T2-E1
DISTI # 70617010		Vishay SiliconixSI8489EDB-T2-E1 P-channel MOSFET Transistor,4.3 A,20 V,4-Pin MICRO FOOT
RoHS: Compliant		0
  • 300:$0.2900
  • 600:$0.2600
  • 1500:$0.2300
  • 3000:$0.2100
SI8489EDB-T2-E1
DISTI # 78-SI8489EDB-T2-E1		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
RoHS: Compliant		12622
  • 1:$0.4900
  • 10:$0.3710
  • 100:$0.2750
  • 500:$0.2260
  • 1000:$0.1750
  • 3000:$0.1710
SI8489EDB-T2-E1
DISTI # 8181438P		Vishay IntertechnologiesTRANS MOSFET P-CH 20V 5.4A, RL2940
  • 60:£0.2550
  • 200:£0.2440
  • 400:£0.2220
  • 800:£0.2010
SI8489EDB-T2-E1
DISTI # C1S803604064229		Vishay IntertechnologiesMOSFETs4770
  • 250:$0.2240
  • 100:$0.2266
  • 25:$0.2848
  • 10:$0.2883
SI8489EDB-T2-E1Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
RoHS: Compliant		Americas - 6000
    Imagen Parte # Descripción
    SI8489EDB-T2-E1

    Mfr.#: SI8489EDB-T2-E1

    OMO.#: OMO-SI8489EDB-T2-E1

    		 MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
    SI8489EDB-T2-E1

    Mfr.#: SI8489EDB-T2-E1

    OMO.#: OMO-SI8489EDB-T2-E1-VISHAY

    		 IGBT Transistors MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de SI8489EDB-T2-E1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,20 US$
    0,20 US$
    10
    0,19 US$
    1,86 US$
    100
    0,18 US$
    17,67 US$
    500
    0,17 US$
    83,45 US$
    1000
    0,16 US$
    157,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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