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IPZA60R080P7XKSA1

IPZA60R080P7XKSA1
Mfr. #:
IPZA60R080P7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPZA60R080P7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPZA60R080P7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
PG-TO-247-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
37 A
Rds On - Resistencia de la fuente de drenaje:
69 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
51 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
129 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
70 ns
Tiempo típico de retardo de encendido:
15 ns
Parte # Alias:
IPZA60R080P7 SP001707740
Tags
IPZA60R0, IPZA, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 80 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 37A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descripción Valores Precio
IPZA60R080P7XKSA1
DISTI # V99:2348_18786393		Infineon Technologies AG600V CoolMOS¿P7 Power Transistor168
  • 2640:$3.5700
  • 720:$3.8700
  • 240:$4.4879
  • 25:$5.2089
  • 10:$5.4650
  • 1:$6.6407
IPZA60R080P7XKSA1
DISTI # IPZA60R080P7XKSA1-ND		Infineon Technologies AGMOSFET TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		190In Stock
  • 2640:$3.4850
  • 720:$4.1552
  • 240:$4.7717
  • 25:$5.4956
  • 10:$5.7640
  • 1:$6.3800
IPZA60R080P7XKSA1
DISTI # 33655386		Infineon Technologies AG600V CoolMOS¿P7 Power Transistor240
  • 240:$3.1977
IPZA60R080P7XKSA1
DISTI # 32416808		Infineon Technologies AG600V CoolMOS¿P7 Power Transistor240
  • 240:$5.2812
IPZA60R080P7XKSA1
DISTI # 27012788		Infineon Technologies AG600V CoolMOS¿P7 Power Transistor168
  • 2640:$3.5700
  • 720:$3.8700
  • 240:$4.4879
  • 25:$5.2089
  • 10:$5.4650
  • 2:$6.6407
IPZA60R080P7XKSA1
DISTI # IPZA60R080P7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 37A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZA60R080P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 240
  • 2400:$3.0900
  • 1200:$3.1900
  • 720:$3.2900
  • 240:$3.3900
  • 480:$3.3900
IPZA60R080P7XKSA1
DISTI # SP001707740		Infineon Technologies AGTrans MOSFET N-CH 650V 37A 4-Pin TO-247 Tube (Alt: SP001707740)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 240
  • 1000:€2.8900
  • 100:€2.9900
  • 500:€2.9900
  • 50:€3.0900
  • 25:€3.1900
  • 10:€3.2900
  • 1:€3.3900
IPZA60R080P7XKSA1
DISTI # 57AC6819		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes240
  • 500:$3.9900
  • 250:$4.3800
  • 100:$4.5900
  • 50:$4.9300
  • 25:$5.2800
  • 10:$5.5400
  • 1:$6.1300
IPZA60R080P7XKSA1Infineon Technologies AGN-Channel 600 V 80 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
RoHS: Not Compliant		240Tube
  • 240:$3.2200
IPZA60R080P7XKSA1
DISTI # 726-IPZA60R080P7XKSA		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		465
  • 1:$6.0700
  • 10:$5.4900
  • 25:$5.2300
  • 100:$4.5400
  • 250:$4.3400
  • 500:$3.9500
IPZA60R080P7XKSA1
DISTI # 2862300		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, TO-247
RoHS: Compliant		240
  • 2640:$5.3900
  • 720:$6.2700
  • 240:$7.2000
  • 25:$8.2900
  • 10:$8.6900
  • 1:$9.6100
IPZA60R080P7XKSA1
DISTI # 2862300		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, TO-247240
  • 500:£2.9000
  • 250:£3.1700
  • 100:£3.3300
  • 10:£3.8300
  • 1:£4.9100
IPZA60R080P7XKSA1
DISTI # XSFP00000136860		Infineon Technologies AG 
RoHS: Compliant		480 in Stock0 on Order
  • 480:$4.2900
  • 240:$4.6000
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Disponibilidad
Valores:
465
En orden:
2448
Ingrese la cantidad:
El precio actual de IPZA60R080P7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,07 US$
6,07 US$
10
5,49 US$
54,90 US$
25
5,23 US$
130,75 US$
100
4,54 US$
454,00 US$
250
4,34 US$
1 085,00 US$
500
3,95 US$
1 975,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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