NDS8435A

Mfr. #:: NDS8435A
Fabricante:: ON Semiconductor
Descripción:: MOSFET P-CH 30V 7.9A 8-SOIC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: NDS8435A Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante: FAIRCHILD

categoria de producto: Chips de IC

Tags: NDS8435A, NDS8435, NDS843, NDS84, NDS8, NDS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NDS8435A Descripción

***-Wing Technology: Tube Surface Mount P-Channel Single Mosfet Transistor 7.9A Ta -7.9A 2.5W 46ns

***ical: Trans MOSFET P-CH 30V 7.9A 8-Pin SOIC N T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-7.9A; On Resistance, Rds(on):0.023ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-7.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:25A; SMD Marking:NDS8435A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.3V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Min:-3V

***rchild Semiconductor: SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***ark: Mosfet Transistor, P Channel, -10 A, -30 V, 20 Mohm, 10 V, -1 V

***itex: Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55+150 deg.C; SMD; SO8

***ure Electronics: Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET, P, -30V, -10A, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power D

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***(Formerly Allied Electronics): MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ohm; ID -8A; SO-8; PD 2.5W; VGS +/-20V; -55

***ure Electronics: Single P-Channel 30 V 0.02 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***roFlash: Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ment14 APAC: P CHANNEL MOSFET, 8A; TRANSISTOR POLARIT; P CHANNEL MOSFET, 8A; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W

*** Source Electronics: MOSFET P-CH 30V 8.8A 8-SOIC / Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R

***ure Electronics: P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8

***emi: 30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ

***nell: MOSFET, P CHANNEL0, -30V, -8.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

***p One Stop Global: Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R

***eco: IC,FDS4435A,30V. 17 MOHM, P-CH , POWER MOSFET

***r Electronics: Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: TRANSISTOR, MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:9A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V

***(Formerly Allied Electronics): MOSFET, Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -7A,SO-8,PD 1.5W,VGS+/-20V,-55C

***ure Electronics: Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8

***enic: 30V 11.4A 2.5W 24m´Î@10V9.1A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***el Electronic: MICROCHIP - 24AA025E48-I/SN - EEPROM, einzigartige EUI-48™-Node-Adresse, 2 Kbit, 2 Blöcke (128 x 8 Bit), Seriell I2C (2-Draht)

***ark: P Channel Mosfet,-30V,-8.1A, Soic-8; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

Market price

Parte #	Mfg.	Descripción	Valores	Precio
NDS8435A DISTI # NDS8435A-ND	ON Semiconductor	MOSFET P-CH 30V 7.9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tube	Limited Supply - Call
NDS8435A	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 7.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	156765	1000:$0.8200 500:$0.8600 100:$0.8900 25:$0.9300 1:$1.0000
NDS8435A DISTI # 512-NDS8435A	ON Semiconductor	MOSFET Single P-Ch FET Enhancement Mode RoHS: Compliant	0
NDS8435A	Fairchild Semiconductor Corporation	MOSFET Transistor, P-Channel, SO	5459	4546:$0.3150 2134:$0.3300 1:$1.2000
NDS8435A	National Semiconductor Corporation	MOSFET Transistor, P-Channel, SO	39	18:$0.6000 5:$0.9000 1:$1.2000
NDS8435A	Freescale Semiconductor	MOSFET Transistor, P-Channel, SO	3592	2798:$0.2750 607:$0.2860 1:$1.1000
NDS8435A	Fairchild Semiconductor Corporation	MOSFET Transistor, P-Channel, SO	1040	471:$1.8993 110:$2.1295 1:$3.4533
NDS8435A	National Semiconductor Corporation	MOSFET Transistor, P-Channel, SO	2000	1144:$0.7700 660:$0.8750 1:$2.8000
NDS8435A	Fairchild Semiconductor Corporation	MOSFET Transistor, P-Channel, SO	11	3:$2.1000 1:$2.8000
NDS8435A	Fairchild Semiconductor Corporation		4490	7:$0.8250 26:$0.5363 95:$0.3094 325:$0.2640 702:$0.2310 1668:$0.2145
NDS8435A	Fairchild Semiconductor Corporation		2098
NDS8435A	Fairchild Semiconductor Corporation		1855
NDS8435A DISTI # 9846263	ON Semiconductor	RoHS: Compliant	0	1:$1.5600 25:$1.3100 100:$0.9420 250:$0.7940

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: NDS8425 , ELM9823AB-S OMO.#: OMO-NDS8425-ELM9823AB-S-1190	Nuevo y original
	Mfr.#: NDS8425A-NL OMO.#: OMO-NDS8425A-NL-1190	Nuevo y original
	Mfr.#: NDS8426 OMO.#: OMO-NDS8426-1190	10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
	Mfr.#: NDS8435A OMO.#: OMO-NDS8435A-ON-SEMICONDUCTOR	MOSFET P-CH 30V 7.9A 8-SOIC
	Mfr.#: NDS8435ANL OMO.#: OMO-NDS8435ANL-1190	Nuevo y original
	Mfr.#: NDS8858 OMO.#: OMO-NDS8858-1190	Nuevo y original
	Mfr.#: NDS8858H OMO.#: OMO-NDS8858H-ON-SEMICONDUCTOR	MOSFET N/P-CH 30V 8SOIC
	Mfr.#: NDS8858HNL OMO.#: OMO-NDS8858HNL-1190	Nuevo y original
	Mfr.#: NDS8934-NL OMO.#: OMO-NDS8934-NL-1190	Nuevo y original
	Mfr.#: NDS8958 OMO.#: OMO-NDS8958-ON-SEMICONDUCTOR	MOSFET N/P-CH 30V 5.3A/4A 8SOIC

Disponibilidad

Valores:: Available
En orden:: 3000
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El precio actual de NDS8435A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,32 US$~~; ~~0,32 US$~~

10: ~~0,31 US$~~; ~~3,06 US$~~

100: ~~0,29 US$~~; ~~28,96 US$~~

500: ~~0,27 US$~~; ~~136,75 US$~~

1000: ~~0,26 US$~~; ~~257,40 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

NDS8435A 3
NDS8435 4
NDS843 16
NDS84 34
NDS8 71
NDS 443

NDS8435A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes