STGB20NB41LZT4

STGB20NB41LZT4
Mfr. #:
STGB20NB41LZT4
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors N-Ch Clamped 20 Amp
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGB20NB41LZT4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STGB20NB41LZT4 DatasheetSTGB20NB41LZT4 Datasheet (P4-P6)STGB20NB41LZT4 Datasheet (P7-P9)
ECAD Model:
Más información:
STGB20NB41LZT4 más información STGB20NB41LZT4 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
D2PAK-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
20 V
Voltaje de saturación colector-emisor:
2 V
Voltaje máximo del emisor de puerta:
12 V
Corriente continua del colector a 25 C:
40 A
Pd - Disipación de energía:
200 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
STGB20NB41LZ
Calificación:
AEC-Q101
Embalaje:
Carrete
Corriente continua de colector Ic Max:
40 A
Altura:
4.6 mm
Longitud:
10.4 mm
Ancho:
9.35 mm
Marca:
STMicroelectronics
Corriente continua del colector:
20 A
Corriente de fuga puerta-emisor:
+/- 660 uA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Nombre comercial:
PowerMESH
Unidad de peso:
0.079014 oz
Tags
STGB20NB4, STGB20NB, STGB20N, STGB20, STGB2, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 442 V 20 A Surface Mount Internally Clamped PowerMESH IGBT-D2PAK
***nell
IGBT, SINGLE, 412KV, 40A, TO-263-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 412V; Transistor Case Style: TO-263; No. of Pi
***ark
N CHANNEL IGBT, PowerMESH, CLAMPED, 40A, D2PAK, FULL REEL; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:200W; Collector Emitter Voltage Max:412V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 375V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
STGB Series 425 Vce 40 A 2.3 us t(on) N-Channel PowerMESH™ IGBT - TO-263
***icroelectronics
20 A, 400 V internally clamped IGBT
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch Clamped 20 Amp
*** Electronic Components
IGBT Transistors N-Ch Clamped 20 Amp
***ronik
IGBT CLAMP 400V 20A 1,8V TO263
***et
STMICROELECTRONICS STGB20NB37LZT4
***el Electronic
DIODE ARRAY GP 300V 15A TO247-3
***nell
IGBT, SMD, 400V, 20A, D2-PAK; Transistor type:PowerMESH; Voltage, Vces:400V; Current, Ic continuous a max:40A; Voltage, Vce sat max:2V; Power dissipation:200W; Case style:D2-PAK; Current, Icm pulsed:80A; Pins, No. of:3; Termination Type:SMD; Time, fall:11500ns; Time, rise:600ns; Transistor polarity:N
***p One Stop Global
Trans IGBT Chip N-CH 380V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 380V V(BR)CES, N-Channel, TO-263AA
*** Electronic Components
IGBT Transistors EAS 350 mJ 350 V Int clamped IGBT
***et
STMICROELECTRONICS STGB35N35LZT4 IGBTS
***ical
Trans IGBT Chip N-CH 390V 25A 150000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
STGB20N40LZ Series 390 V 25 A Automotive-Grade Internally Clamped IGBT -D2PAK-3
***icroelectronics
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ
***icroelectronics SCT
Automotive-grade internally clamped IGBT, D2PAK, Tape and Reel
***(Formerly Allied Electronics)
IGBT N-Ch 390V 25A PowerMESH 300mJ D2PAK
***ical
Trans IGBT Chip N=-CH 600V 40A 208000mW 3-Pin(2+Tab) D2PAK T/R
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,600V,20A,D2PAK; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***ark
TAPE REEL/N-ch / 20A 600V IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB
***nell
IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3; DC Collector Current: 35A; Collector Emitter Saturation Voltage Vce(on): 2.45V; Power Dissipation Pd: 298W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Parte # Mfg. Descripción Valores Precio
STGB20NB41LZT4
DISTI # V72:2272_17691836
STMicroelectronicsTrans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
994
  • 500:$2.2340
  • 250:$2.8080
  • 100:$2.8390
  • 25:$3.3520
  • 10:$3.3910
  • 1:$3.7200
STGB20NB41LZT4
DISTI # 497-4351-1-ND
STMicroelectronicsIGBT 442V 40A 200W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2146In Stock
  • 500:$2.7827
  • 100:$3.2688
  • 10:$3.9900
  • 1:$4.4400
STGB20NB41LZT4
DISTI # 497-4351-6-ND
STMicroelectronicsIGBT 442V 40A 200W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2146In Stock
  • 500:$2.7827
  • 100:$3.2688
  • 10:$3.9900
  • 1:$4.4400
STGB20NB41LZT4
DISTI # 497-4351-2-ND
STMicroelectronicsIGBT 442V 40A 200W D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
2000In Stock
  • 2000:$2.1700
  • 1000:$2.2785
STGB20NB41LZT4
DISTI # 26199322
STMicroelectronicsTrans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 2000:$2.1874
  • 1000:$2.2968
STGB20NB41LZT4
DISTI # 25929241
STMicroelectronicsTrans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
994
  • 500:$2.2340
  • 250:$2.8080
  • 100:$2.8390
  • 25:$3.3520
  • 10:$3.3910
  • 4:$3.7200
STGB20NB41LZT4
DISTI # STGB20NB41LZT4
STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB20NB41LZT4)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 6000
  • 1:€5.3500
  • 25:€4.0600
  • 100:€3.5400
  • 250:€3.0900
  • 500:€2.0200
STGB20NB41LZT4
DISTI # STGB20NB41LZT4
STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STGB20NB41LZT4)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.2900
  • 2000:$2.1900
  • 4000:$2.0900
  • 6000:$1.9900
  • 10000:$1.8900
STGB20NB41LZT4
DISTI # 33X1197
STMicroelectronicsIGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 , RoHS Compliant: Yes437
  • 1:$4.4400
  • 10:$3.9900
  • 100:$3.2700
  • 500:$2.7800
STGB20NB41LZT4
DISTI # 511-STGB20NB41LZ
STMicroelectronicsIGBT Transistors N-Ch Clamped 20 Amp
RoHS: Compliant
0
  • 1000:$2.1700
STGB20NB41LZT4
DISTI # STGB20NB41LZ
STMicroelectronics382V 40A 200W DPak
RoHS: Compliant
970
  • 10:€1.5600
  • 50:€1.3600
  • 200:€1.2600
  • 500:€1.2000
STGB20NB41LZT4STMicroelectronicsINSTOCK1000
    STGB20NB41LZT4
    DISTI # 2353662
    STMicroelectronicsIGBT, SINGLE, 412KV, 40A, TO-263-3
    RoHS: Compliant
    437
    • 1:$7.0300
    • 10:$6.3200
    • 100:$5.1800
    • 500:$4.4100
    STGB20NB41LZT4
    DISTI # C1S730200220417
    STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    1000
    • 1000:$1.5800
    STGB20NB41LZT4
    DISTI # C1S730200437080
    STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    994
    • 250:$2.8010
    • 100:$2.8310
    • 25:$3.3380
    • 10:$3.3770
    • 1:$3.6980
    STGB20NB41LZT4
    DISTI # 2353662
    STMicroelectronicsIGBT, SINGLE, 412KV, 40A, TO-263-3
    RoHS: Compliant
    437
    • 1:£3.1400
    • 10:£2.0300
    • 100:£1.8500
    • 250:£1.6700
    • 500:£1.4900
    Imagen Parte # Descripción
    STGB30H60DLFB

    Mfr.#: STGB30H60DLFB

    OMO.#: OMO-STGB30H60DLFB

    IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
    ISL9V5045S3ST-F085

    Mfr.#: ISL9V5045S3ST-F085

    OMO.#: OMO-ISL9V5045S3ST-F085

    IGBT Transistors 500mJ, 450V EcoSPARK N-Chan Ignition IGBT
    ERG-2SJ220

    Mfr.#: ERG-2SJ220

    OMO.#: OMO-ERG-2SJ220-PANASONIC

    Metal Oxide Resistors 22 OHM 5% 300PPM 2W
    ISL9V5045S3ST-F085

    Mfr.#: ISL9V5045S3ST-F085

    OMO.#: OMO-ISL9V5045S3ST-F085-ON-SEMICONDUCTOR

    IGBT 480V 51A 300W D2PAK
    STGB30H60DLFB

    Mfr.#: STGB30H60DLFB

    OMO.#: OMO-STGB30H60DLFB-STMICROELECTRONICS

    TRENCH GATE FIELD-STOP IGBT, HB
    B32932A3104K000

    Mfr.#: B32932A3104K000

    OMO.#: OMO-B32932A3104K000-EPCOS

    CAP FILM 0.1UF 10% 305VAC RADIAL
    Disponibilidad
    Valores:
    960
    En orden:
    2943
    Ingrese la cantidad:
    El precio actual de STGB20NB41LZT4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,11 US$
    4,11 US$
    10
    3,49 US$
    34,90 US$
    100
    3,03 US$
    303,00 US$
    250
    2,87 US$
    717,50 US$
    500
    2,58 US$
    1 290,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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