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STK800

STK800
Mfr. #:
STK800
Fabricante:
STMicroelectronics
Descripción:
MOSFET Power MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STK800 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STK800 más información STK800 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PolarPAK-10
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
20 A
Rds On - Resistencia de la fuente de drenaje:
7.8 mOhms
Vgs - Voltaje puerta-fuente:
16 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
5.2 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
6.15 mm
Serie:
STK800
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET de potencia
Ancho:
5.16 mm
Marca:
STMicroelectronics
Transconductancia directa - Mín .:
44 S
Otoño:
15 ns
Tipo de producto:
MOSFET
Hora de levantarse:
50 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
45 ns
Tiempo típico de retardo de encendido:
15 ns
Tags
STK80, STK8, STK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 20A 10-Pin PolarPAK T/R
***icroelectronics
N-channel 30V - 0.006Ohm - 20A - PolarPAK®
***ca Corp
Power Field-Effect Transistor, 20A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
Power MOSFET Transistors Power MOSFET
***nell
MOSFET, N CH, 30V, 20A, POLARPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 5.2W; Transistor Case Style: PolarPAK; No. of Pins: -; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
***Yang
Transistor MOSFET Array Dual N-CH 30V 30A/40A 8-Pin Power 56 T/R - Tape and Reel
***ark
MOSFET Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V ;RoHS Compliant: Yes
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dua- MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***ment14 APAC
MOSFET,NN CH,30V,POWER56; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.0019ohm; Power Dissipation Pd:2.5W
***ure Electronics
N-Channle 30 V 22 A 10 mohm Surface Mount PowerTrench Mosfet - Power 56
***emi
N-Channel PowerTrench® MOSFET 30V, 22A, 10mΩ
*** Stop Electro
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***ure Electronics
Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ical
Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***emi
N-Channel PowerTrench® MOSFET, Dual CoolTM 33, 30V, 40A, 6.25mΩ
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.00625ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 30V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode
***et Japan
Transistor MOSFET Array Dual N-CH 30V 25A 8-Pin PowerPAK SO T/R
***ment14 APAC
MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:30V; On
***nell
MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 22W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Parte # Mfg. Descripción Valores Precio
STK800
DISTI # 497-5123-1-ND		STMicroelectronicsMOSFET N-CH 30V 20A POLARPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		20In Stock
  • 10:$2.5590
  • 1:$2.8500
STK800
DISTI # 497-5123-6-ND		STMicroelectronicsMOSFET N-CH 30V 20A POLARPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		20In Stock
  • 10:$2.5590
  • 1:$2.8500
STK800
DISTI # 497-5123-2-ND		STMicroelectronicsMOSFET N-CH 30V 20A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    STK800
    DISTI # 511-STK800    		STMicroelectronicsMOSFET Power MOSFET
    RoHS: Compliant    		0
      STK800STMicroelectronics20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET496
      • 447:$0.4000
      • 79:$0.4480
      • 1:$1.2800
      STK800Vishay Semiconductors20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET2400
      • 1251:$0.5600
      • 251:$0.6400
      • 1:$1.6000
      STK800STMicroelectronics20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET33
      • 7:$3.0000
      • 3:$4.0000
      • 1:$6.0000
      STK800STMicroelectronics 3191
        STK800STMicroelectronics 42
        • 2:$4.4800
        • 7:$2.9120
        • 19:$2.2400
        STK800
        DISTI # 1752106        		STMicroelectronicsMOSFET, N CH, 30V, 20A, POLARPAK
        RoHS: Compliant        		0
        • 10:$3.8600
        • 1:$4.2900
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        Disponibilidad
        Valores:
        Available
        En orden:
        4500
        Ingrese la cantidad:
        El precio actual de STK800 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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