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Here are the values for these MOSFETs:All:Ube=1.26VIc=5.2maHFE=372.89vHFE=372.90vHFE=382.88vHFE=382.87vHFE=372.98vHFE=382.87HFE=372.88vHFE=372.86vHFE=382.88vHFE=372.89v
2019-07-01
all ok
2019-07-12
Fast shipping, all OK 100%
2019-04-17| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| W947D6HBHX5ETR DISTI # V36:1790_07052196 | Winbond Electronics Corp | 128M MDDR, X16, 200MHZ T&R | 0 | |
| W947D6HBHX5E TR DISTI # W947D6HBHX5ECT-ND | Winbond Electronics Corp | IC DRAM 128M PARALLEL 60VFBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1915In Stock |
|
| W947D6HBHX5E TR DISTI # W947D6HBHX5EDKR-ND | Winbond Electronics Corp | IC DRAM 128M PARALLEL 60VFBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1915In Stock |
|
| W947D6HBHX5E TR DISTI # W947D6HBHX5ETR-ND | Winbond Electronics Corp | IC DRAM 128M PARALLEL 60VFBGA RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| W947D6HBHX5E DISTI # 454-W947D6HBHX5E | Winbond Electronics Corp | DRAM 128M mDDR, x16, 200MHz RoHS: Compliant | 0 | |
| W947D6HBHX5E TR DISTI # 454-W947D6HBHX5ETR | Winbond Electronics Corp | DRAM 128M mDDR, x16, 200MHz T&R RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: W947D6HBHX6E OMO.#: OMO-W947D6HBHX6E |
DRAM 128M mDDR, x16, 166MHz, 65nm |
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Mfr.#: W947D6HBHX5E OMO.#: OMO-W947D6HBHX5E |
DRAM 128M mDDR, x16, 200MHz |
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Mfr.#: W947D6HBHX5I OMO.#: OMO-W947D6HBHX5I |
DRAM 128M mDDR, x16, 200MHz, Industrial Temp |
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Mfr.#: W947D6HBHX6E TR OMO.#: OMO-W947D6HBHX6E-TR |
DRAM 128M mDDR, x16, 166MHz, 65nm T&R |
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Mfr.#: W947D6HBHX5E TR OMO.#: OMO-W947D6HBHX5E-TR |
DRAM 128M mDDR, x16, 200MHz T&R |
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Mfr.#: W947D6HBHX5I TR OMO.#: OMO-W947D6HBHX5I-TR |
DRAM 128M mDDR, x16, 200MHz, Industrial Temp T&R |
|
Mfr.#: W947D6HBHX6E TR |
IC DRAM 128M PARALLEL 60VFBGA |
|
Mfr.#: W947D6HBHX-5E OMO.#: OMO-W947D6HBHX-5E-1190 |
Nuevo y original |
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Mfr.#: W947D6HBHX5E |
IC DRAM 128M PARALLEL 60VFBGA |
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Mfr.#: W947D6HBHX6E |
IC DRAM 128M PARALLEL 60VFBGA |
