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SI4090DY-T1-GE3

SI4090DY-T1-GE3
Mfr. #:
SI4090DY-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4090DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI4090DY-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Nombre comercial
ThunderFET TrenchFET
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
7.8W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
2410pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
19.7A (Tc)
Rds-On-Max-Id-Vgs
10 mOhm @ 15A, 10V
Vgs-th-Max-Id
3.3V @ 250μA
Puerta-Carga-Qg-Vgs
69nC @ 10V
Disipación de potencia Pd
7.8 W
Id-corriente-de-drenaje-continua
19.7 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
3.3 V
Resistencia a la fuente de desagüe de Rds
10 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
27.9 nC
Tags
SI409, SI40, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 10 mOhm 7.8 W Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 100V 19.7A 8-Pin SOIC N T/R
***mal
N-Ch MOSFET SO-8 100V 10mohm @ 10V
***et
Trans MOSFET N-CH 100V 13.2A 8-Pin SO T/R
***nell
MOSFET, N-CH, 100V, 19.7A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:7.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
Parte # Mfg. Descripción Valores Precio
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 19.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		156In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 19.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		156In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 19.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.6622
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 13.2A 8-Pin SO T/R (Alt: SI4090DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 12500
  • 2500:$9.4600
  • 5000:$6.5241
  • 7500:$4.8513
  • 12500:$3.9417
  • 25000:$3.5698
  • 62500:$3.4400
  • 125000:$3.3193
SI4090DY-T1-GE3
DISTI # 19X1960		Vishay IntertechnologiesMOSFET Transistor, N Channel, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V RoHS Compliant: Yes11795
  • 1:$1.5900
  • 10:$1.3200
  • 25:$1.2200
  • 50:$1.1300
  • 100:$1.0300
  • 500:$0.9010
  • 1000:$0.8020
SI4090DY-T1-GE3
DISTI # 78-SI4090DY-T1-GE3		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
RoHS: Compliant		9
  • 1:$1.5100
  • 10:$1.2400
  • 100:$0.9510
  • 500:$0.8180
  • 1000:$0.7180
  • 2500:$0.7170
SI4090DY-T1-GE3
DISTI # 2364058		Vishay IntertechnologiesMOSFET, N-CH, 100V, 19.7A, SOIC-8
RoHS: Compliant		9640
  • 5:£1.0500
  • 25:£0.7120
  • 100:£0.6830
  • 250:£0.6330
  • 500:£0.5830
SI4090DY-T1-GE3
DISTI # 2364058		Vishay IntertechnologiesMOSFET, N-CH, 100V, 19.7A, SOIC-8
RoHS: Compliant		11795
  • 1:$2.4000
  • 10:$1.9700
  • 100:$1.5100
  • 500:$1.3000
  • 1000:$1.1400
  • 2500:$1.1400
SI4090DY-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
RoHS: Compliant		Americas -
  • 2500:$0.6030
  • 5000:$0.5790
  • 10000:$0.5580
Imagen Parte # Descripción
SI4090DY-T1-GE3

Mfr.#: SI4090DY-T1-GE3

OMO.#: OMO-SI4090DY-T1-GE3-VISHAY

 IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
SI4090DY

Mfr.#: SI4090DY

OMO.#: OMO-SI4090DY-1190

 Nuevo y original
SI4090DY-T1-E3

Mfr.#: SI4090DY-T1-E3

OMO.#: OMO-SI4090DY-T1-E3-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de SI4090DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,84 US$
0,84 US$
10
0,80 US$
7,95 US$
100
0,75 US$
75,33 US$
500
0,71 US$
355,75 US$
1000
0,67 US$
669,60 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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