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FGB7N60UNDF

FGB7N60UNDF
Mfr. #:
FGB7N60UNDF
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 600V 7A NPT IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGB7N60UNDF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGB7N60UNDF más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-263AB-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.1 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
14 A
Pd - Disipación de energía:
83 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
FGB7N60UNDF
Embalaje:
Carrete
Marca:
ON Semiconductor / Fairchild
Corriente de fuga puerta-emisor:
+/- 10 uA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
800
Subcategoría:
IGBT
Unidad de peso:
0.046296 oz
Tags
FGB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 14A 83000mW 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***emi
IGBT, 600V, 7A, Short Circuit Rated
***el Electronic
IGBT Transistors 600V 7A NPT IGBT
***ark
Nptpigbt To263 7A 600V/Reel |Onsemi FGB7N60UNDF
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential.
***Yang
Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Tape and Reel
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
***nell
IGBT, SINGLE, 600V, 10A, TO-263AB; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 73.5W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
14 A, 600 V short-circuit rugged IGBT
*** Source Electronics
IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***(Formerly Allied Electronics)
IGBT, N-CHANNEL 600V 25A, D2PAK
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
***ical
Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
N-channel 600 V, 7 A very fast IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors PowerMESH TM IGBT
***S
French Electronic Distributor since 1988
***nell
IGBT, SMD, 600V, 7A, D2-PAK; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins; O
***ical
Trans IGBT Chip N-CH 600V 15A 65000mW 3-Pin(2+Tab) D2PAK T/R
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 15A D2PAK
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***ser
Power MOSFET Transistors N Ch 100V 0.033 Ohm 25A Pwr MOSFET
***r Electronics
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
***et
TRANS IGBT CHIP N-CH 600V 15A 3PIN DPAK
***icroelectronics
New short circuit rugged "K" series
***S
French Electronic Distributor since 1988
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***ark
TAPE REEL/N-ch / 20A 600V IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 23A 100000mW Automotive 3-Pin(2+Tab) D2PAK Tube
***ernational Rectifier
600V Automotive UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
***ineon
Benefits: Low Vce(on); Optimized for <1KHz switching applications; 150C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: HVAC Compressor; Oil Pump
***ark
IGBT, 600V, 23A, 100W, D2PAK; Transistor Type:IGBT; DC Collector Current:23A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-55°C; No. of Pins:3 ;RoHS Compliant: Yes
Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
Parte # Mfg. Descripción Valores Precio
FGB7N60UNDF
DISTI # 31271979		ON Semiconductor600V 7A NPT IGBT1600
  • 9600:$0.9243
  • 4800:$0.9464
  • 2400:$0.9831
  • 800:$1.0494
FGB7N60UNDF
DISTI # 31234704		ON Semiconductor600V 7A NPT IGBT800
  • 9600:$0.9187
  • 4800:$0.9464
  • 2400:$0.9831
  • 800:$1.0494
FGB7N60UNDF
DISTI # FGB7N60UNDF-ND		ON SemiconductorIGBT 600V 14A 83W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.3506
FGB7N60UNDF
DISTI # FGB7N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) D2PAK Rail (Alt: FGB7N60UNDF)
RoHS: Compliant
Min Qty: 800		Europe - 0
  • 8000:€0.9479
  • 4800:€1.0019
  • 3200:€1.0439
  • 1600:€1.1289
  • 800:€1.3579
FGB7N60UNDF
DISTI # FGB7N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: FGB7N60UNDF)
Min Qty: 305
Container: Bulk		Americas - 0
  • 3050:$1.0119
  • 1525:$1.0369
  • 915:$1.0509
  • 610:$1.0639
  • 305:$1.0709
FGB7N60UNDF
DISTI # FGB7N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) D2PAK Rail - Tape and Reel (Alt: FGB7N60UNDF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$0.9069
  • 4800:$0.9299
  • 3200:$0.9419
  • 1600:$0.9539
  • 800:$0.9599
FGB7N60UNDF
DISTI # 95T0028		ON SemiconductorNPTPIGBT TO263 7A 600V / REEL0
  • 30000:$0.9190
  • 18000:$0.9560
  • 12000:$0.9930
  • 6000:$1.1100
  • 3000:$1.1700
  • 1:$1.2400
FGB7N60UNDF
DISTI # 512-FGB7N60UNDF		ON SemiconductorIGBT Transistors 600V 7A NPT IGBT
RoHS: Compliant		768
  • 1:$2.1600
  • 10:$1.8300
  • 100:$1.4700
  • 500:$1.2800
  • 800:$1.0600
  • 2400:$0.9930
  • 4800:$0.9560
FGB7N60UNDFFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Compliant		994
  • 1000:$1.0800
  • 500:$1.1400
  • 100:$1.1800
  • 25:$1.2300
  • 1:$1.3300
FGB7N60UNDF
DISTI # 8648824P		ON SemiconductorIGBT 600V 7A SHORT CIRCUIT RATED D2PAK-2, TU730
  • 50:£0.6900
Imagen Parte # Descripción
FGB5N60UNDF

Mfr.#: FGB5N60UNDF

OMO.#: OMO-FGB5N60UNDF

 IGBT Transistors 600V 5A NPT IGBT
B41866C6227M000

Mfr.#: B41866C6227M000

OMO.#: OMO-B41866C6227M000

 Aluminum Electrolytic Capacitors - Radial Leaded 50VDC 220uF 20% STD Leads
WYO472MCMCF0KR

Mfr.#: WYO472MCMCF0KR

OMO.#: OMO-WYO472MCMCF0KR

 Safety Capacitors 4700pF 250V 20%
MPX335K305H

Mfr.#: MPX335K305H

OMO.#: OMO-MPX335K305H

 Film Capacitors 3.3uF 305V
LM61BIZ/NOPB

Mfr.#: LM61BIZ/NOPB

OMO.#: OMO-LM61BIZ-NOPB

 Board Mount Temperature Sensors Ana Output Tem Sens
SG170

Mfr.#: SG170

OMO.#: OMO-SG170-AMETHERM

 Inrush Current Limiters 4OHM 8AMP
B41866C6227M000

Mfr.#: B41866C6227M000

OMO.#: OMO-B41866C6227M000-EPCOS

 CAP ALUM 220UF 20% 50V RADIAL
MPX335K305H

Mfr.#: MPX335K305H

OMO.#: OMO-MPX335K305H-ILLINOIS-CAPACITOR

 CAP FILM 3.3UF 10% 305VAC RAD
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
B32921C3333K

Mfr.#: B32921C3333K

OMO.#: OMO-B32921C3333K-800

 Film Capacitors 0.033uF 305volts 10% X2
Disponibilidad
Valores:
763
En orden:
2746
Ingrese la cantidad:
El precio actual de FGB7N60UNDF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,16 US$
2,16 US$
10
1,83 US$
18,30 US$
100
1,47 US$
147,00 US$
500
1,28 US$
640,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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