KSP45BU

KSP45BU
Mfr. #:
KSP45BU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
KSP45BU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-92-3
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
350 V
Colector- Voltaje base VCBO:
400 V
Emisor- Voltaje base VEBO:
6 V
Voltaje de saturación colector-emisor:
0.75 V
Corriente máxima del colector de CC:
0.3 A
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
KSP45
Ganancia de corriente CC hFE Max:
200
Altura:
4.7 mm
Longitud:
4.7 mm
Embalaje:
A granel
Ancho:
3.93 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
0.3 A
Colector de CC / Ganancia base hfe Min:
50
Pd - Disipación de energía:
625 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
1000
Subcategoría:
Transistores
Unidad de peso:
0.006286 oz
Tags
KSP45, KSP4, KSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Bipolar (BJT) Transistor NPN 350V 300mA 625mW Through Hole TO-92-3
*** Electronic Components
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***emi
NPN Epitaxial Silicon Transistor
***r Electronics
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***roFlash
Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 Trans GP BJT NPN 40V 0.2A 3-Pin TO-92
***ponent Stockers USA
200 mA 40 V NPN Si SMALL SIGNAL TRANSISTOR TO-92
***nell
TRANSISTOR, N CH 100MA TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 150hFE; RF Transistor
***ark
RF Bipolar Transistor; Transistor Polarity:N Channel; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):15; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:40V ;RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***ure Electronics
2N4401 Series 40 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92
***emi
NPN Bipolar Junction Transistor, TO-92
***ical
Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Bag
***ark
TRANSISTOR, NPN, 40V, 0.6A, TO-226AA; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***ment14 APAC
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:750mV; Current Ic Continuous a Max:600mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:20; Package / Case:TO-92; Power Dissipation Pd:625mW; Termination Type:Through Hole
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***Yang
Bipolar Transistors - BJT NPN Transistor General Purpose
***ical
Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Fan-Fold
***emi
NPN Bipolar Junction Transistor, TO-92
***ure Electronics
2N4401 Series 40 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92
***i-Key
TRANSISTOR NPN 40V 600MA TO-92
***nell
TRANSISTOR, BIPOL, NPN, 40V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 625mW; DC Collector Current: -; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***et
Bipolar (BJT) Transistor NPN 20V 500mA 625mW Through Hole TO-92-3
***p One Stop
Trans GP BJT NPN 20V 0.5A 3-Pin TO-92 Ammo
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Silicon
***et
Bipolar (BJT) Transistor NPN 20V 500mA 625mW Through Hole TO-92-3
***ical
Trans GP BJT NPN 20V 0.5A 3-Pin TO-92 Bulk
*** Electronic Components
Bipolar Transistors - BJT PNP/40V/0.5A
***Yang
Bipolar (BJT) Transistor NPN 20V 500mA 625mW Through Hole TO-92-3 - Bulk
***ical
Trans GP BJT NPN 20V 0.5A 3-Pin TO-92 Bulk
*** Electronic Components
Bipolar Transistors - BJT PNP/40V/0.5A
Parte # Mfg. Descripción Valores Precio
KSP45BU
DISTI # KSP45BU-ND
ON SemiconductorTRANS NPN 350V 0.3A TO-92
RoHS: Compliant
Min Qty: 10000
Container: Bulk
Limited Supply - Call
    KSP45BU
    DISTI # 512-KSP45BU
    ON SemiconductorBipolar Transistors - BJT NPN Si Transistor Epitaxial
    RoHS: Compliant
    0
      KSP45BUFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.3A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
      RoHS: Compliant
      209000
      • 100:$0.0400
      • 500:$0.0400
      • 1000:$0.0400
      • 1:$0.0500
      • 25:$0.0500
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      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de KSP45BU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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