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FGL60N100BNTDTU

FGL60N100BNTDTU
Mfr. #:
FGL60N100BNTDTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors HIGH POWER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGL60N100BNTDTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-264-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1000 V
Voltaje de saturación colector-emisor:
1.5 V
Voltaje máximo del emisor de puerta:
25 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
180 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
FGL60N100BNTD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
60 A
Altura:
26 mm
Longitud:
20 mm
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
60 A
Corriente de fuga puerta-emisor:
+/- 500 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
375
Subcategoría:
IGBT
Parte # Alias:
FGL60N100BNTDTU_NL
Unidad de peso:
0.238311 oz
Tags
FGL60N100BNTDT, FGL60N100BNT, FGL60N100B, FGL60N10, FGL60N1, FGL60N, FGL60, FGL6, FGL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Transistor, igbt, n-Chan+Diode, 1Kv V(Br)Ces, 42A I(C), to-264 Rohs Compliant: Yes
***ure Electronics
FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br)ceo: 1.2kV; Operating Temperature Range
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***ical
Trans IGBT Chip N=-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL35N120FTD Series 1200 V 35 A Field Stop Trench IGBT - TO-264 3L
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.
***ical
Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ource
Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ure Electronics
SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264
***ment14 APAC
SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***ource
Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
***ical
Trans IGBT Chip N=-CH 600V 160A 250000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
SGL160N60UFD Series 600 V 160 A Flange Mount Ultra-Fast IGBT -TO-264
***nell
IGBT, ULTRAFAST, 600V, 160A, TO-264; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
Parte # Mfg. Descripción Valores Precio
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU-ND		ON SemiconductorIGBT 1000V 60A 180W TO264
RoHS: Compliant
Min Qty: 375
Container: Tube		Limited Supply - Call
  • 375:$4.0482
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€1.8900
  • 1000:€1.8900
  • 50:€1.9900
  • 100:€1.9900
  • 25:€2.0900
  • 10:€2.1900
  • 1:€2.2900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 109
Container: Bulk		Americas - 0
  • 1090:$2.7900
  • 218:$2.8900
  • 327:$2.8900
  • 545:$2.8900
  • 109:$2.9900
FGL60N100BNTDTU
DISTI # FGL60N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTDTU)
RoHS: Compliant
Min Qty: 375
Container: Tube		Americas - 0
  • 3750:$2.4900
  • 750:$2.5900
  • 1500:$2.5900
  • 2250:$2.5900
  • 375:$2.6900
FGL60N100BNTDTU
DISTI # 60J0636		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,42A I(C),TO-264 RoHS Compliant: Yes0
  • 500:$2.3600
  • 250:$2.4300
  • 100:$2.9100
  • 50:$3.3600
  • 25:$3.5800
  • 10:$4.0900
  • 1:$4.7200
FGL60N100BNTDTU
DISTI # 512-FGL60N100BNTDTU		ON SemiconductorIGBT Transistors HIGH POWER
RoHS: Compliant		0
    FGL60N100BNTDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA
    RoHS: Compliant    		25
    • 1000:$3.0300
    • 500:$3.1900
    • 100:$3.3200
    • 25:$3.4600
    • 1:$3.7300
    Imagen Parte # Descripción
    FGL60N100BNTDTU

    Mfr.#: FGL60N100BNTDTU

    OMO.#: OMO-FGL60N100BNTDTU

    		 IGBT Transistors HIGH POWER
    FGL60N100BNTDTU

    Mfr.#: FGL60N100BNTDTU

    OMO.#: OMO-FGL60N100BNTDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors HIGH POWER
    FGL60N100BNTD

    Mfr.#: FGL60N100BNTD

    OMO.#: OMO-FGL60N100BNTD-ON-SEMICONDUCTOR

    		 IGBT 1000V 60A 180W TO264
    FGL60N100ANTD

    Mfr.#: FGL60N100ANTD

    OMO.#: OMO-FGL60N100ANTD-1190

    		 Nuevo y original
    FGL60N100BNTD,FGL40N120A

    Mfr.#: FGL60N100BNTD,FGL40N120A

    OMO.#: OMO-FGL60N100BNTD-FGL40N120A-1190

    		 Nuevo y original
    FGL60N100BNTDU

    Mfr.#: FGL60N100BNTDU

    OMO.#: OMO-FGL60N100BNTDU-1190

    		 Nuevo y original
    FGL60N100D

    Mfr.#: FGL60N100D

    OMO.#: OMO-FGL60N100D-1190

    		 Nuevo y original
    FGL60N170

    Mfr.#: FGL60N170

    OMO.#: OMO-FGL60N170-1190

    		 Nuevo y original
    FGL60N170BNTD

    Mfr.#: FGL60N170BNTD

    OMO.#: OMO-FGL60N170BNTD-1190

    		 Nuevo y original
    FGL60N170N

    Mfr.#: FGL60N170N

    OMO.#: OMO-FGL60N170N-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de FGL60N100BNTDTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    375
    3,15 US$
    1 181,25 US$
    750
    2,83 US$
    2 122,50 US$
    1125
    2,39 US$
    2 688,75 US$
    2625
    2,27 US$
    5 958,75 US$
    5250
    2,18 US$
    11 445,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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