OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SCT3030ALGC11

SCT3030ALGC11
Mfr. #:
SCT3030ALGC11
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SCT3030ALGC11 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SCT3030ALGC11 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247N-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
70 A
Rds On - Resistencia de la fuente de drenaje:
30 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.7 V
Vgs - Voltaje puerta-fuente:
- 4 V, 22 V
Qg - Carga de puerta:
104 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
262 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
SCT3x
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
9.4 S
Otoño:
27 ns
Tipo de producto:
MOSFET
Hora de levantarse:
41 ns
Cantidad de paquete de fábrica:
450
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
48 ns
Tiempo típico de retardo de encendido:
22 ns
Parte # Alias:
SCT3030AL
Unidad de peso:
0.211644 oz
Tags
SCT303, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCT3030AL Series 650 V 70 A 39 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube
***ark
Mosfet, N-Ch, 650V, 70A, To-247N-3; Transistor Polarity:n Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V Rohs Compliant: Yes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Parte # Mfg. Descripción Valores Precio
SCT3030ALGC11
DISTI # 32733236		ROHM SemiconductorTrans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube806
  • 1:$30.7500
SCT3030ALGC11
DISTI # 32370958		ROHM SemiconductorTrans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube60
  • 30:$27.5312
SCT3030ALGC11
DISTI # SCT3030ALGC11-ND		ROHM SemiconductorMOSFET NCH 650V 70A TO247N
RoHS: Compliant
Min Qty: 1
Container: Tube		2706In Stock
  • 510:$17.6640
  • 120:$19.4560
  • 30:$21.7600
  • 10:$22.7840
  • 1:$24.7000
SCT3030ALGC11
DISTI # C1S625901667552		ROHM SemiconductorMOSFETs806
  • 200:$15.4000
  • 100:$15.8000
  • 50:$16.3000
  • 10:$18.4000
  • 5:$19.9000
  • 1:$24.6000
SCT3030ALGC11
DISTI # SCT3030ALGC11		ROHM SemiconductorTrans MOSFET N 650V 70A 3-Pin TO-247N Tube (Alt: SCT3030ALGC11)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€22.8900
  • 500:€24.4900
  • 100:€25.3900
  • 50:€26.3900
  • 25:€27.4900
  • 10:€28.5900
  • 1:€31.1900
SCT3030ALGC11
DISTI # SCT3030ALGC11		ROHM SemiconductorTrans MOSFET N 650V 70A 3-Pin TO-247N Tube - Rail/Tube (Alt: SCT3030ALGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$16.3900
  • 2700:$16.7900
  • 1800:$17.7900
  • 900:$18.8900
  • 450:$20.1900
SCT3030ALGC11
DISTI # SCT3030ALGC11		ROHM SemiconductorTrans MOSFET N 650V 70A 3-Pin TO-247N Tube (Alt: SCT3030ALGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Asia - 0
    SCT3030ALGC11
    DISTI # 05AC9460    		ROHM SemiconductorMOSFET, N-CH, 650V, 70A, TO-247N-3,Transistor Polarity:N Channel,Continuous Drain Current Id:70A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V RoHS Compliant: Yes20
    • 250:$23.8100
    • 100:$24.2400
    • 50:$24.7100
    • 25:$25.5200
    • 10:$26.4200
    • 5:$27.4300
    • 1:$28.4700
    SCT3030ALGC11ROHM SemiconductorSCT3030AL Series 650 V 70 A 39 mOhm N-Channel SiC Power Mosfet - TO-247N
    RoHS: Compliant    		90Tube
    • 30:$19.5800
    SCT3030ALGC11
    DISTI # 755-SCT3030ALGC11    		ROHM SemiconductorMOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
    RoHS: Compliant    		568
    • 1:$24.7100
    • 5:$24.4500
    • 10:$22.7900
    • 25:$21.7700
    • 100:$19.4600
    • 250:$18.5600
    SCT3030ALGC11ROHM Semiconductor 58
    • 35:$27.4210
    • 17:$29.0340
    • 1:$32.2600
    SCT3030ALGC11
    DISTI # TMOSP11652    		ROHM SemiconductorSiC-N 650V 70A 39mOhmTO247-3
    RoHS: Compliant    		Stock DE - 4080Stock HK - 0Stock US - 0
    • 30:$38.5000
    • 60:$36.3000
    • 90:$34.1000
    • 120:$29.7000
    SCT3030ALGC11
    DISTI # 2678783    		ROHM SemiconductorMOSFET, N-CH, 650V, 70A, TO-247N6
    • 100:£21.0200
    • 50:£22.5200
    • 10:£24.4000
    • 5:£27.2100
    • 1:£32.8400
    SCT3030ALGC11
    DISTI # 2678783    		ROHM SemiconductorMOSFET, N-CH, 650V, 70A, TO-247N
    RoHS: Compliant    		10
    • 1:$44.8500
    SCT3030ALGC11ROHM SemiconductorRoHS(ship within 1day)73
    • 1:$18.7500
    • 10:$17.2500
    • 50:$16.8800
    • 100:$16.6300
    • 500:$16.2500
    • 1000:$16.1300
    SCT3030ALGC11ROHM SemiconductorMOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
    RoHS: Compliant    		Americas - 180
    • 30:$21.4600
    • 60:$21.1200
    • 90:$20.6300
    • 120:$19.3800
    SCT3030ALGC11
    DISTI # XSFP00000114818    		ROHM SEMICONDUCTOR 
    RoHS: Compliant    		60 in Stock0 on Order
    • 60:$26.1100
    • 30:$27.9700
    Imagen Parte # Descripción
    NE5532DR

    Mfr.#: NE5532DR

    OMO.#: OMO-NE5532DR

    		 Operational Amplifiers - Op Amps Dual Low Noise Op
    ES1JFL

    Mfr.#: ES1JFL

    OMO.#: OMO-ES1JFL

    		 Rectifiers 600V 1A Super Fast Rectifier
    SCT3060ALGC11

    Mfr.#: SCT3060ALGC11

    OMO.#: OMO-SCT3060ALGC11

    		 MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS
    GS66508T-E02-MR

    Mfr.#: GS66508T-E02-MR

    OMO.#: OMO-GS66508T-E02-MR

    		 MOSFET 650V 30A E-Mode GaN
    UJ3C065030K3S

    Mfr.#: UJ3C065030K3S

    OMO.#: OMO-UJ3C065030K3S

    		 MOSFET 650V/30mOhm SiC CASCODE G3
    NRVB140SFT1G

    Mfr.#: NRVB140SFT1G

    OMO.#: OMO-NRVB140SFT1G

    		 Schottky Diodes & Rectifiers SCHOTTKY RECTIFIER
    SCT3030KLGC11

    Mfr.#: SCT3030KLGC11

    OMO.#: OMO-SCT3030KLGC11

    		 MOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS
    SCT3022ALGC11

    Mfr.#: SCT3022ALGC11

    OMO.#: OMO-SCT3022ALGC11

    		 MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
    D471K20Y5PL63L6R

    Mfr.#: D471K20Y5PL63L6R

    OMO.#: OMO-D471K20Y5PL63L6R

    		 Ceramic Disc Capacitors .25LS 470PF 500V 10%
    SCT3030KLGC11

    Mfr.#: SCT3030KLGC11

    OMO.#: OMO-SCT3030KLGC11-ROHM-SEMI

    		 MOSFET NCH 1.2KV 72A TO247N
    Disponibilidad
    Valores:
    514
    En orden:
    2497
    Ingrese la cantidad:
    El precio actual de SCT3030ALGC11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    24,71 US$
    24,71 US$
    5
    24,45 US$
    122,25 US$
    10
    22,79 US$
    227,90 US$
    25
    21,77 US$
    544,25 US$
    100
    19,46 US$
    1 946,00 US$
    250
    18,56 US$
    4 640,00 US$
    500
    17,67 US$
    8 835,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    More Newest Products
    Top