BSL314PEH6327XTSA1

BSL314PEH6327XTSA1
Mfr. #:
BSL314PEH6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET SMALL SIGNAL+P-CH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSL314PEH6327XTSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
BSL314PEH6327XTSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
Automotive, AEC-Q101, OptiMOS
embalaje
Tape & Reel (TR)
Alias ​​de parte
BSL314PE H6327 SP001101006
Estilo de montaje
SMD / SMT
Paquete-Estuche
SC-74, SOT-457
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PG-TSOP6-6
Configuración
Doble
Tipo FET
2 P-Channel (Dual)
Potencia máxima
500mW
Tipo transistor
1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
294pF @ 15V
Función FET
Logic Level Gate, 4.5V Drive
Corriente-Continuo-Drenaje-Id-25 ° C
1.5A
Rds-On-Max-Id-Vgs
140 mOhm @ 1.5A, 10V
Vgs-th-Max-Id
2V @ 6.3μA
Puerta-Carga-Qg-Vgs
2.9nC @ 10V
Disipación de potencia Pd
500 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
2.8 ns 2.8 ns
Hora de levantarse
3.9 ns 3.9 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
- 1.5 A - 1.5 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V - 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 2 V
Resistencia a la fuente de desagüe de Rds
230 mOhms 230 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
12.4 ns 12.4 ns
Tiempo de retardo de encendido típico
5.1 ns 5.1 ns
Qg-Gate-Charge
- 0.7 nC - 0.7 nC
Transconductancia directa-Mín.
3 S 3 S
Modo de canal
Mejora
Tags
BSL314, BSL31, BSL3, BSL
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual P-CH 30V 1.5A 6-Pin TSOP T/R
***ark
Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.5A; Product Range:-; Automotive Qualification Standard:-; Msl:- Rohs Compliant: Yes
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
Parte # Mfg. Descripción Valores Precio
BSL314PEH6327XTSA1
DISTI # V72:2272_06391923
Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A Automotive 6-Pin TSOP T/R
RoHS: Compliant
0
    BSL314PEH6327XTSA1
    DISTI # V36:1790_06391923
    Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A Automotive 6-Pin TSOP T/R
    RoHS: Compliant
    0
      BSL314PEH6327XTSA1
      DISTI # BSL314PEH6327XTSA1-ND
      Infineon Technologies AGMOSFET 2P-CH 30V 1.5A 6TSOP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Limited Supply - Call
      • 3000:$0.2131
      BSL314PEH6327XTSA1
      DISTI # BSL314PEH6327XTSA1
      Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A 6-Pin TSOP T/R - Tape and Reel (Alt: BSL314PEH6327XTSA1)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.1439
      • 6000:$0.1379
      • 12000:$0.1329
      • 18000:$0.1289
      • 30000:$0.1269
      BSL314PEH6327XTSA1.
      DISTI # 31AC8225
      Infineon Technologies AGContinuous Drain Current Id:1.5A,Drain Source Voltage Vds:30V,Product Range:-,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
      • 18000:$0.1780
      • 6000:$0.1790
      • 1:$0.1800
      BSL314PEH6327XTSA1
      DISTI # 726-BSL314PEH6327XTS
      Infineon Technologies AGMOSFET SMALL SIGNAL+P-CH
      RoHS: Compliant
      0
      • 1:$0.5400
      • 10:$0.4520
      • 100:$0.2760
      • 1000:$0.2130
      • 3000:$0.1820
      • 9000:$0.1690
      • 24000:$0.1600
      • 45000:$0.1570
      Imagen Parte # Descripción
      BSL314PEH6327XTSA1

      Mfr.#: BSL314PEH6327XTSA1

      OMO.#: OMO-BSL314PEH6327XTSA1

      MOSFET SMALL SIGNAL+P-CH
      BSL314PEH6327

      Mfr.#: BSL314PEH6327

      OMO.#: OMO-BSL314PEH6327-1190

      Nuevo y original
      BSL314PEH6327XTSA1

      Mfr.#: BSL314PEH6327XTSA1

      OMO.#: OMO-BSL314PEH6327XTSA1-INFINEON-TECHNOLOGIES

      IGBT Transistors MOSFET SMALL SIGNAL+P-CH
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de BSL314PEH6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,24 US$
      0,24 US$
      10
      0,22 US$
      2,24 US$
      100
      0,21 US$
      21,20 US$
      500
      0,20 US$
      100,10 US$
      1000
      0,19 US$
      188,40 US$
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