OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

2SK1464

2SK1464
Mfr. #:
2SK1464
Fabricante:
Rochester Electronics, LLC
Descripción:
8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2SK1464 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
SANYO
categoria de producto
Chips de IC
Tags
2SK146, 2SK14, 2SK1, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S
French Electronic Distributor since 1988
***icroelectronics
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
***ure Electronics
N-Channel 900 V 980 mOhm Flange Mount SuperMESH™ Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 9.2A I(D), 900V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ark
MOSFET, N CH, 900V, 9.2A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 900V, 8.6A, 1.3Ω, TO-3P
***et
Trans MOSFET N-CH 900V 8.6A 3-Pin(3+Tab) TO-3P Rail
***r Electronics
Power Field-Effect Transistor, 8.6A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***enic
900V 8.6A 1´Î@10V4.3A 240W 5V@250uA 25pF@25V N Channel 2.7nF@25V 55nC@10V -55¡Í~+150¡Í@(Tj) TO-3PN MOSFETs ROHS
***ark
QF 900V 1.3OHM TO3PN / TUBE ROHS COMPLIANT: YES
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ark
MOSFET Transistor, N Channel, 9 A, 900 V, 1.12 ohm, 10 V, 5 V
***emi
N-Channel QFET® MOSFET 900V, 9.0A, 1.4Ω
*** Source Electronics
MOSFET N-CH 900V 9A TO-3P / Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***(Formerly Allied Electronics)
IRFPF50PBF N-channel MOSFET Transistor, 6.7 A, 900 V, 3-Pin TO-247AC
***ure Electronics
Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-CHANNEL 900V - 1.1 OHM - 8A TO-220 ZENER PROTECTED SUPERMESH MOSFET
***ical
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CHANNEL MOSFET, 900V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.4 Ω, TO-220
***ure Electronics
N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:8A; Resistance, Rds On:1.12ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:32A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:205W; Power, Pd:205W; Resistance, Rds on Max:1.4ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:900V; Voltage, Vgs th Max:5V; Width, External:10.67mm
Parte # Mfg. Descripción Valores Precio
2SK1464ON Semiconductor 
RoHS: Not Compliant		6645
  • 1000:$5.9200
  • 500:$6.2300
  • 100:$6.4900
  • 25:$6.7700
  • 1:$7.2900
2SK1464SANYO Semiconductor Co Ltd8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML32
  • 25:$9.2138
  • 5:$10.2375
  • 1:$13.6500
Imagen Parte # Descripción
2SK1399-L

Mfr.#: 2SK1399-L

OMO.#: OMO-2SK1399-L-1190

 Nuevo y original
2SK1580-T2

Mfr.#: 2SK1580-T2

OMO.#: OMO-2SK1580-T2-1190

 Nuevo y original
2SK1581-T2B-A

Mfr.#: 2SK1581-T2B-A

OMO.#: OMO-2SK1581-T2B-A-1190

 Nuevo y original
2SK1848-TB-E

Mfr.#: 2SK1848-TB-E

OMO.#: OMO-2SK1848-TB-E-1190

 Nuevo y original
2SK1936-01

Mfr.#: 2SK1936-01

OMO.#: OMO-2SK1936-01-1190

 Nuevo y original
2SK2158(M)-T2B

Mfr.#: 2SK2158(M)-T2B

OMO.#: OMO-2SK2158-M--T2B-1190

 Nuevo y original
2SK3492-TL-E

Mfr.#: 2SK3492-TL-E

OMO.#: OMO-2SK3492-TL-E-1190

 Trans MOSFET N-CH Si 60V 8A 3-Pin(2+Tab) TP-FA
2SK4065-DL-1EX

Mfr.#: 2SK4065-DL-1EX

OMO.#: OMO-2SK4065-DL-1EX-ON-SEMICONDUCTOR

 MOSFET N-CH 75V TO263-2
2SK782

Mfr.#: 2SK782

OMO.#: OMO-2SK782-1190

 Nuevo y original
2SK932-24-N-TB-E

Mfr.#: 2SK932-24-N-TB-E

OMO.#: OMO-2SK932-24-N-TB-E-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de 2SK1464 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,88 US$
8,88 US$
10
8,44 US$
84,36 US$
100
7,99 US$
799,20 US$
500
7,55 US$
3 774,00 US$
1000
7,10 US$
7 104,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
More Newest Products
Top