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SI7716ADN-T1-GE3

SI7716ADN-T1-GE3
Mfr. #:
SI7716ADN-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 16A 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7716ADN-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI7716ADN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI7716ADN-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR 1212-8
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PowerPAKR 1212-8
Configuración
Fuente triple de drenaje cuádruple simple
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
27.7W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
846pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
16A (Tc)
Rds-On-Max-Id-Vgs
13.5 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Puerta-Carga-Qg-Vgs
23nC @ 10V
Disipación de potencia Pd
3.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
16 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
13.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
14 ns
Tiempo de retardo de encendido típico
15 ns
Transconductancia directa-Mín.
24 S
Modo de canal
Mejora
Tags
SI7716ADN-T1-G, SI7716ADN-T1, SI7716ADN-T, SI7716AD, SI7716A, SI7716, SI771, SI77, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.0135 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8
***ark
Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,30V,16A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:20V
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Parte # Mfg. Descripción Valores Precio
SI7716ADN-T1-GE3
DISTI # SI7716ADN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 16A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3000In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI7716ADN-T1-GE3
DISTI # SI7716ADN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 16A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3000In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI7716ADN-T1-GE3
DISTI # SI7716ADN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 16A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4500
SI7716ADN-T1-GE3
DISTI # SI7716ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R (Alt: SI7716ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7716ADN-T1-GE3
    DISTI # SI7716ADN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7716ADN-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.4399
    • 6000:$0.4389
    • 12000:$0.4369
    • 18000:$0.4359
    • 30000:$0.4349
    SI7716ADN-T1-GE3
    DISTI # SI7716ADN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R (Alt: SI7716ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.8369
    • 6000:€0.6009
    • 12000:€0.4869
    • 18000:€0.4309
    • 30000:€0.4119
    SI7716ADN-T1-GE3
    DISTI # 18X0024    		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 16A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V , RoHS Compliant: Yes0
    • 1:$1.2600
    • 10:$1.0400
    • 25:$0.9580
    • 50:$0.8760
    • 100:$0.7940
    • 500:$0.6820
    • 1000:$0.5390
    SI7716ADN-T1-GE3.
    DISTI # 28AC2175    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO0
    • 1:$0.5060
    • 3000:$0.5030
    SI7716ADN-T1-GE3
    DISTI # 781-SI7716ADN-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		3564
    • 1:$1.2600
    • 10:$1.0400
    • 100:$0.7940
    • 500:$0.6820
    • 1000:$0.5390
    • 3000:$0.5030
    • 6000:$0.4780
    • 9000:$0.4670
    SI7716ADN-T1-GE3Vishay Siliconix 6012
      SI7716ADN-T1-GE3Vishay Intertechnologies 50
        SI7716ADNT1GE3Vishay Intertechnologies 
        RoHS: Compliant        		Europe - 3000
          SI7716ADN-T1-GE3
          DISTI # C1S803601064529          		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 EP T/R
          RoHS: Compliant          		2998
          • 3000:$0.4952
          SI7716ADN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
          RoHS: Compliant          		Americas -
            SI7716ADN-T1-GE3
            DISTI # 2478976            		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 16A POWERPAK, FULL REEL
            RoHS: Compliant            		0
            • 3000:$0.7370
            SI7716ADN-T1-GE3
            DISTI # 1840425            		Vishay IntertechnologiesMOSFET,N CH,30V,16A,POWERPAK8
            RoHS: Compliant            		0
            • 5:£0.5780
            • 25:£0.5690
            • 100:£0.5610
            • 250:£0.5490
            • 500:£0.5290
            Imagen Parte # Descripción
            SI7716ADN-T1-GE3

            Mfr.#: SI7716ADN-T1-GE3

            OMO.#: OMO-SI7716ADN-T1-GE3

            		 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
            SI7716ADN

            Mfr.#: SI7716ADN

            OMO.#: OMO-SI7716ADN-1190

            		 Nuevo y original
            SI7716ADN-T1-E3

            Mfr.#: SI7716ADN-T1-E3

            OMO.#: OMO-SI7716ADN-T1-E3-1190

            		 Nuevo y original
            SI7716ADN-T1-GE3

            Mfr.#: SI7716ADN-T1-GE3

            OMO.#: OMO-SI7716ADN-T1-GE3-VISHAY

            		 MOSFET N-CH 30V 16A 1212-8
            SI7716ADN-T1-GE3..

            Mfr.#: SI7716ADN-T1-GE3..

            OMO.#: OMO-SI7716ADN-T1-GE3--1190

            		 Nuevo y original
            SI7716ADN-T1-GE3CT

            Mfr.#: SI7716ADN-T1-GE3CT

            OMO.#: OMO-SI7716ADN-T1-GE3CT-1190

            		 Nuevo y original
            SI7716ADN-TI-GE3

            Mfr.#: SI7716ADN-TI-GE3

            OMO.#: OMO-SI7716ADN-TI-GE3-1190

            		 Nuevo y original
            SI7716ADNT1GE3

            Mfr.#: SI7716ADNT1GE3

            OMO.#: OMO-SI7716ADNT1GE3-1190

            		 Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            Disponibilidad
            Valores:
            Available
            En orden:
            3000
            Ingrese la cantidad:
            El precio actual de SI7716ADN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            0,59 US$
            0,59 US$
            10
            0,56 US$
            5,60 US$
            100
            0,53 US$
            53,02 US$
            500
            0,50 US$
            250,35 US$
            1000
            0,47 US$
            471,30 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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