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IPA126N10N3 G

IPA126N10N3 G
Mfr. #:
IPA126N10N3 G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPA126N10N3 G Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPA126N10N3 G más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
35 A
Rds On - Resistencia de la fuente de drenaje:
12.6 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
9 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
33 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Tubo
Altura:
16.15 mm
Longitud:
10.65 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
4.85 mm
Marca:
Infineon Technologies
Otoño:
4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
6 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
IPA126N10N3GXKSA1 IPA126N1N3GXK SP000485964
Unidad de peso:
0.211644 oz
Tags
IPA126N10N3G, IPA126N10N3, IPA12, IPA1, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPA126N10N3GXKSA1
DISTI # IPA126N10N3GXKSA1-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO220-FP
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
  • 500:$1.0874
IPA126N10N3G
DISTI # SP000485964		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin TO-220FP Tube (Alt: SP000485964)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.1519
  • 10:€1.0239
  • 25:€0.9209
  • 50:€0.8379
  • 100:€0.7679
  • 500:€0.7089
  • 1000:€0.6579
IPA126N10N3GXK
DISTI # IPA126N10N3GXKSA1		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA126N10N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$0.8129
  • 1000:$0.7839
  • 2000:$0.7559
  • 3000:$0.7299
  • 5000:$0.7169
IPA126N10N3GInfineon Technologies AGPower Field-Effect Transistor, 35A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		1900
  • 1000:$0.7700
  • 500:$0.8100
  • 100:$0.8400
  • 25:$0.8700
  • 1:$0.9400
IPA126N10N3 G
DISTI # 726-IPA126N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
RoHS: Compliant		1000
  • 1:$1.6700
  • 10:$1.4200
  • 100:$1.1300
  • 500:$0.9890
IPA126N10N3GXKSA1
DISTI # N/A		Infineon Technologies AGMOSFET MV POWER MOS0
    IPA126N10N3GXKSA1
    DISTI # 8922242P    		Infineon Technologies AGMOSFET N-CHANNEL 100V 35A OPTIMOS TO220, TU200
    • 50:£0.8790
    • 100:£0.7800
    • 500:£0.6810
    • 1000:£0.5640
    Imagen Parte # Descripción
    IPA126N10NM3SXKSA1

    Mfr.#: IPA126N10NM3SXKSA1

    OMO.#: OMO-IPA126N10NM3SXKSA1

    		 MOSFET
    IPA126N10N3 G

    Mfr.#: IPA126N10N3 G

    OMO.#: OMO-IPA126N10N3-G

    		 MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
    IPA126N10N3GXKSA1

    Mfr.#: IPA126N10N3GXKSA1

    OMO.#: OMO-IPA126N10N3GXKSA1

    		 MOSFET MV POWER MOS
    IPA126N10N3GXK

    Mfr.#: IPA126N10N3GXK

    OMO.#: OMO-IPA126N10N3GXK-1190

    		 Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA126N10N3GXKSA1)
    IPA126N10N(126N10N)

    Mfr.#: IPA126N10N(126N10N)

    OMO.#: OMO-IPA126N10N-126N10N--1190

    		 Nuevo y original
    IPA126N10N3

    Mfr.#: IPA126N10N3

    OMO.#: OMO-IPA126N10N3-1190

    		 Nuevo y original
    IPA126N10N3G

    Mfr.#: IPA126N10N3G

    OMO.#: OMO-IPA126N10N3G-1190

    		 Power Field-Effect Transistor, 35A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    IPA126N10N3GXKSA1

    Mfr.#: IPA126N10N3GXKSA1

    OMO.#: OMO-IPA126N10N3GXKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 35A TO220-FP
    IPA126N10N3 G

    Mfr.#: IPA126N10N3 G

    OMO.#: OMO-IPA126N10N3-G-126

    		 IGBT Transistors MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de IPA126N10N3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,66 US$
    1,66 US$
    10
    1,41 US$
    14,10 US$
    100
    1,13 US$
    113,00 US$
    500
    0,99 US$
    494,50 US$
    1000
    0,82 US$
    820,00 US$
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