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IXTX22N100L

IXTX22N100L
Mfr. #:
IXTX22N100L
Fabricante:
Littelfuse
Descripción:
MOSFET LINEAR PWR MOSFET N-CHAN 1000V 22A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTX22N100L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTX22N100L Datasheet
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
PLUS-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1 kV
Id - Corriente de drenaje continua:
22 A
Rds On - Resistencia de la fuente de drenaje:
600 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
700 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
21.34 mm
Longitud:
16.13 mm
Serie:
IXTX22N100
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
IXYS
Otoño:
50 ns
Tipo de producto:
MOSFET
Hora de levantarse:
35 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
80 ns
Tiempo típico de retardo de encendido:
36 ns
Unidad de peso:
0.056438 oz
Tags
IXTX2, IXTX, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 1000 V 600 mOhm 700 W Power Mosfet - PLUS247
***ical
Trans MOSFET N-CH 1KV 22A 3-Pin(3+Tab) PLUS 247
***(Formerly Allied Electronics)
Power MOSFET N-Ch 1000V 22A PLUS247
***icroelectronics
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH 800V 19.5A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 800V 19.5A TO247
***ark
MOSFET, N-CH, 800V, 19.5A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:19.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 19.5A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
***r Electronics
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 1200 V 290 mO 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™
***nell
MOSFET, N-CH, 1.2KV, 20A, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.169ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.5V;
***ark
Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration:single; Channel Type:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:20V; Power Dissipation:175W; Msl:-Rohs Compliant: Yes
***va Crawler
N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 long leads package
***ical
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube
*** Electronic Components
MOSFET N-Ch 950V .275Ohm 17.5A Zener-protect
***ronik
N-CH 950V 17,5A 330mOhm TO247LL
***icroelectronics SCT
Power MOSFETs, 950V, 17.5A, TO-247 long leads, Tube
***ure Electronics
SCT3080KL Series 1200 V 31 A 104 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 1.2KV 31A 3-Pin(3+Tab) TO-247N Tube
***ment14 APAC
MOSFET, N-CH, 31A, 1.2KV, TO-247N; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Source Voltage Vds:1.2kV; On Resistance
***roFlash
Power Field-Effect Transistor, 31A I(D), 1200V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 31A, 1.2KV, TO-247N; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 5.6V; Power Dissipation Pd: 165W; Transistor Case Style: TO-247N; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 58A I(D), 800V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 680μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive, High Temperature Reflow CAP ALUM 680UF 20% 35V SMD
***nell
MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ure Electronics
SCT3040KL Series 1200 V 55 A 52 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247N Tube
***nell
MOSFET, N-CH, 55A, 1.2KV, TO-247N; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 5.6V;
***ark
Mosfet, N-Ch, 1.2Kv, 55A, To-247N-3; Mosfet Module Configuration:single; Channel Type:n Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:18V; Power Dissipation:262W Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IXTX22N100L
DISTI # 27502285		IXYS CorporationTrans MOSFET N-CH 1KV 22A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		60
  • 120:$25.8093
  • 30:$27.7695
  • 1:$32.6700
IXTX22N100L
DISTI # IXTX22N100L-ND		IXYS CorporationMOSFET N-CH 1000V 22A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
  • 120:$26.0700
  • 30:$28.0500
  • 10:$30.5250
  • 1:$33.0000
IXTX22N100L
DISTI # V36:1790_15877584		IXYS CorporationTrans MOSFET N-CH 1KV 22A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		0
    IXTX22N100L
    DISTI # 747-IXTX22N100L    		IXYS CorporationMOSFET LINEAR PWR MOSFET N-CHAN 1000V 22A
    RoHS: Compliant    		0
    • 1:$33.0000
    • 5:$31.3500
    • 10:$30.5300
    • 25:$28.0500
    • 50:$26.8600
    • 100:$26.0700
    • 250:$23.9200
    IXTX22N100LIXYS Corporation 30
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      Disponibilidad
      Valores:
      140
      En orden:
      2123
      Ingrese la cantidad:
      El precio actual de IXTX22N100L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      33,00 US$
      33,00 US$
      5
      31,35 US$
      156,75 US$
      10
      30,53 US$
      305,30 US$
      25
      28,05 US$
      701,25 US$
      50
      26,86 US$
      1 343,00 US$
      100
      26,07 US$
      2 607,00 US$
      250
      23,92 US$
      5 980,00 US$
      500
      22,77 US$
      11 385,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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