SIA433EDJ-T1-GE3

Mfr. #:: SIA433EDJ-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET P-CH 20V 12A SC-70-6
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SIA433EDJ-T1-GE3 Ficha de datos
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HTML Datasheet:: SIA433EDJ-T1-GE3 Datasheet SIA433EDJ-T1-GE3 Datasheet (P4-P6)SIA433EDJ-T1-GE3 Datasheet (P7-P9)
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Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SIA433EDJ-GE3

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAKR SC-70-6

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: PowerPAKR SC-70-6 Single

Configuración: Único

Tipo FET: Canal P MOSFET, óxido metálico

Potencia máxima: 19W

Tipo transistor: 1 P-Channel

Drenaje-a-fuente-voltaje-Vdss: 20V

Entrada-Capacitancia-Ciss-Vds: -

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 12A (Tc)

Rds-On-Max-Id-Vgs: 18 mOhm @ 7.6A, 4.5V

Vgs-th-Max-Id: 1.2V @ 250μA

Puerta-Carga-Qg-Vgs: 75nC @ 8V

Disipación de potencia Pd: 19 W

Otoño: 3.2 us

Hora de levantarse: 1.7 us

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: - 12 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 1.2 V

Resistencia a la fuente de desagüe de Rds: 18 mOhms

Polaridad del transistor: P-Channel

Tiempo de retardo de apagado típico: 6 us

Tiempo de retardo de encendido típico: 0.71 us

Qg-Gate-Charge: 50 nC

Transconductancia directa-Mín.: 35 S

Tags: SIA433, SIA43, SIA4, SIA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SIA433EDJ-T1-GE3 DISTI # V72:2272_09216837	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	644	500:$0.3232 250:$0.3761 100:$0.3771 25:$0.4647 10:$0.4666 1:$0.5489
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7836In Stock	1000:$0.3263 500:$0.4079 100:$0.5506 10:$0.7140 1:$0.8200
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7836In Stock	1000:$0.3263 500:$0.4079 100:$0.5506 10:$0.7140 1:$0.8200
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.2871
SIA433EDJ-T1-GE3 DISTI # 29553397	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	644	500:$0.3232 250:$0.3761 100:$0.3771 28:$0.4647
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA433EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA433EDJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3219 6000:$0.3119 12000:$0.2999 18000:$0.2909 30000:$0.2829
SIA433EDJ-T1-GE3 DISTI # SIA433EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA433EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.5619 6000:€0.3829 12000:€0.3299 18000:€0.3049 30000:€0.2829
SIA433EDJ-T1-GE3 DISTI # 79R5403	Vishay Intertechnologies	Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 79R5403) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.7200 25:$0.5750 50:$0.5060 100:$0.4360 250:$0.3980 500:$0.3600 1000:$0.2880
SIA433EDJ-T1-GE3 DISTI # 79R5403	Vishay Intertechnologies	P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):18mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-500mV,Power Dissipation Pd:3.5W , RoHS Compliant: Yes	0	1:$0.7200 25:$0.5750 50:$0.5060 100:$0.4360 250:$0.3980 500:$0.3600 1000:$0.2880
SIA433EDJ-T1-GE3 DISTI # 74R0197	Vishay Intertechnologies	P CH MOSFET,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,No. of Pins:6,On Resistance Rds(on):18mohm,Operating Temperature Max:150°C,Operating Temperature Min:-55°C,Operating Temperature Range:-55°C to +150°C , RoHS Compliant: Yes	0	1:$0.2670 3000:$0.2650 6000:$0.2520 12000:$0.2240
SIA433EDJ-T1-GE3 DISTI # 70459574	Vishay Siliconix	-20V [email protected] 12A P-Ch G-III RoHS: Compliant	0	3000:$0.3580 6000:$0.3330
SIA433EDJ-T1-GE3 DISTI # 781-SIA433EDJ-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant	275	1:$0.7200 10:$0.5750 100:$0.4360 500:$0.3600 1000:$0.2880 3000:$0.2610 6000:$0.2440
SIA433EDJ-T1-GE3	Vishay Siliconix		5750	9:$0.6000 35:$0.3900 130:$0.2250 446:$0.1920 965:$0.1680 2293:$0.1560
SIA433EDJ-T1-GE3	Vishay Semiconductors	POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 20V, 0.018OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	4600	3847:$0.2000 834:$0.2080 1:$0.8000
SIA433EDJT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIA433EDJ-T1-GE3 DISTI # 2679708	Vishay Intertechnologies	MOSFET, P-CH, -20V, -12A, POWERPAK SC70 RoHS: Compliant	0	3000:£0.2080 9000:£0.2070
SIA433EDJ-T1-GE3. DISTI # 1867633	Vishay Intertechnologies	P CHANNEL MOSFET RoHS: Compliant	0	1:£0.6330 25:£0.5050 50:£0.4440 100:£0.3840 250:£0.3500
SIA433EDJ-T1-GE3 DISTI # C1S803601064547	Vishay Intertechnologies	MOSFETs RoHS: Not Compliant	644	250:$0.3761 100:$0.3771 25:$0.4648 10:$0.4666
SIA433EDJ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant	Americas - Stock
SIA433EDJ-T1-GE3 DISTI # 2646398	Vishay Intertechnologies	MOSFET, P-CH, -20V, -12A, POWERPAK SC70 RoHS: Compliant	0	1:$1.1500 10:$0.9110 100:$0.6900 500:$0.5710 1000:$0.4560 3000:$0.4320
SIA433EDJ-T1-GE3 DISTI # 2679708	Vishay Intertechnologies	MOSFET, P-CH, -20V, -12A, POWERPAK SC70 RoHS: Compliant	0	3000:$0.4030 6000:$0.3930 9000:$0.3900
SIA433EDJ-T1-GE3. DISTI # 1867633	Vishay Intertechnologies	P CHANNEL MOSFET RoHS: Compliant	4247	1:$1.1100 50:$0.9070 100:$0.6990 500:$0.5830 1000:$0.5000 2500:$0.4710

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SIA433EDJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA433EDJ-T1-GE3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SIA433EDJ OMO.#: OMO-SIA433EDJ-1190	Nuevo y original
	Mfr.#: SIA433EDJ-T1-GE3 OMO.#: OMO-SIA433EDJ-T1-GE3-VISHAY	MOSFET P-CH 20V 12A SC-70-6
	Mfr.#: SIA433EDJT1GE3 OMO.#: OMO-SIA433EDJT1GE3-1190	Nuevo y original

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El precio actual de SIA433EDJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,23 US$~~; ~~0,23 US$~~

10: ~~0,22 US$~~; ~~2,22 US$~~

100: ~~0,21 US$~~; ~~21,06 US$~~

500: ~~0,20 US$~~; ~~99,45 US$~~

1000: ~~0,19 US$~~; ~~187,20 US$~~

Empezar con

SIA433 4
SIA43 28
SIA4 136
SIA 347

SIA433EDJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes