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IRFU3806PBF

IRFU3806PBF
Mfr. #:
IRFU3806PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 60V 43A I-PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFU3806PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Rectificador internacional
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Tubo
Unidad de peso
0.139332 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
IPAK-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
71 W
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
43 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
12.6 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
22 nC
Tags
IRFU3, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 60V, 42A, 15.8 MOHM, 22 NC QG, I-PAK, Pb-Free
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:IPAK; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Turn Off Time:49ns; Turn On Time:6.3ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ser
MOSFETs- Power and Small Signal 24V 60A N-Channel No-Cancel/No-Return
***i-Key
MOSFET N-CH 60V 24A IPAK
***el Electronic
RES SMD 3.3K OHM 1% 1/4W 1206
***p One Stop Global
Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) DPAK-SL Rail
***ser
MOSFETs- Power and Small Signal 60V 20A N-Channel
***r Electronics
Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 24A Ta 24A 62.5W 27ns
***r Electronics
Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 24V 60A N-Channel
***ure Electronics
Single N-Channel 55 V 0.027 Ohm 65 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):27mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 55V, 37A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:37A; Resistance, Rds On:0.027ohm; Case Style:TO-251 (I-Pak); Case Style, Alternate:I-PAK; Current, Idm Pulse:160A; Power Dissipation:69W; Power, Pd:69W; Resistance, Rds on @ Vgs = 10V:27ohm; Thermal Resistance, Junction to Case A:1.8°C/W; Time, t Off:60ns; Time, t On:69ns; Voltage, Vds Max:55V
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***(Formerly Allied Electronics)
IRFU014PBF N-channel MOSFET Transistor, 7.7 A, 60 V, 3-Pin IPAK
***nell
MOSFET, N, 60V, 7.7A, I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss
*** Stop Electro
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***(Formerly Allied Electronics)
MOSFET, N Ch., 60V, 77A, 8.4 MOHM, 51 NC QG, I-PAK, Pb-Free
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Package / Case:IPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Turn Off Time:55ns; Turn On Time:13ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
IRFU3806PBF
DISTI # IRFU3806PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 43A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRFU3806PBFInfineon Technologies AGPower Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant    		2319
    • 1000:$0.4100
    • 500:$0.4300
    • 100:$0.4500
    • 25:$0.4700
    • 1:$0.5000
    IRFU3806PBFInternational RectifierPower Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant    		1120
    • 1000:$0.4100
    • 500:$0.4300
    • 100:$0.4500
    • 25:$0.4700
    • 1:$0.5000
    IRFU3806PBF
    DISTI # 942-IRFU3806PBF    		Infineon Technologies AGMOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg
    RoHS: Compliant    		0
      IRFU3806PBF
      DISTI # 1602239      		Infineon Technologies AGMOSFET, N, I-PAK
      RoHS: Compliant      		0
      • 1:$1.9800
      • 10:$1.6500
      • 100:$1.2700
      • 500:$1.0800
      • 1000:$0.9360
      Imagen Parte # Descripción
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      		 MOSFET MOSFT 30V 61A 12.5mOhm 24nC
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      Mfr.#: IRFU3303PBF

      OMO.#: OMO-IRFU3303PBF

      		 MOSFET MOSFT 30V 33A 31mOhm 29nC
      IRFU3710ZPBF

      Mfr.#: IRFU3710ZPBF

      OMO.#: OMO-IRFU3710ZPBF

      		 MOSFET MOSFT 100V 56A 18mOhm 69nC Qg
      IRFU3412PBF

      Mfr.#: IRFU3412PBF

      OMO.#: OMO-IRFU3412PBF-INFINEON-TECHNOLOGIES

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      Mfr.#: IRFU3711

      OMO.#: OMO-IRFU3711-INFINEON-TECHNOLOGIES

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      IRFU310PBF,IRFU310,FU310

      Mfr.#: IRFU310PBF,IRFU310,FU310

      OMO.#: OMO-IRFU310PBF-IRFU310-FU310-1190

      		 Nuevo y original
      IRFU321

      Mfr.#: IRFU321

      OMO.#: OMO-IRFU321-1190

      		 Power Field-Effect Transistor, 3.1A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      IRFU3710Z

      Mfr.#: IRFU3710Z

      OMO.#: OMO-IRFU3710Z-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 42A I-PAK
      IRFU3910PBF

      Mfr.#: IRFU3910PBF

      OMO.#: OMO-IRFU3910PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 16A I-PAK
      IRFU3910PBF,IRFU3910,FU3

      Mfr.#: IRFU3910PBF,IRFU3910,FU3

      OMO.#: OMO-IRFU3910PBF-IRFU3910-FU3-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de IRFU3806PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,69 US$
      0,69 US$
      10
      0,66 US$
      6,56 US$
      100
      0,62 US$
      62,10 US$
      500
      0,59 US$
      293,25 US$
      1000
      0,55 US$
      552,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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