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BSC027N06LS5ATMA1

BSC027N06LS5ATMA1
Mfr. #:
BSC027N06LS5ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET DIFFERENTIATED MOSFETS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC027N06LS5ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
2.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
30 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
83 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
Optimos 5
Embalaje:
Carrete
Serie:
BSC027N
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
60 S
Otoño:
5.4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.8 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
7.7 ns
Parte # Alias:
BSC027N06LS5 SP001385616
Tags
BSC027N0, BSC027, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R
***ineon SCT
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package, PG-TDSON-8, RoHS
***ark
MOSFET, N-CH, 60V, 150DEG C, 83W ROHS COMPLIANT: YES
***ical
Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R
***ineon
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
Parte # Mfg. Descripción Valores Precio
BSC027N06LS5ATMA1
DISTI # V72:2272_18204834		Infineon Technologies AGOptiMOS Power-Transistor,60V14426
  • 6000:$0.8848
  • 3000:$0.9186
  • 1000:$0.9646
  • 500:$1.1272
  • 250:$1.2183
  • 100:$1.3536
  • 25:$1.5192
  • 10:$1.6880
  • 1:$2.1798
BSC027N06LS5ATMA1
DISTI # V36:1790_18204834		Infineon Technologies AGOptiMOS Power-Transistor,60V0
  • 5000000:$0.8255
  • 2500000:$0.8258
  • 500000:$0.8587
  • 50000:$0.9194
  • 5000:$0.9297
BSC027N06LS5ATMA1
DISTI # BSC027N06LS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4406In Stock
  • 1000:$1.0681
  • 500:$1.2891
  • 100:$1.5690
  • 10:$1.9520
  • 1:$2.1700
BSC027N06LS5ATMA1
DISTI # BSC027N06LS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4406In Stock
  • 1000:$1.0681
  • 500:$1.2891
  • 100:$1.5690
  • 10:$1.9520
  • 1:$2.1700
BSC027N06LS5ATMA1
DISTI # BSC027N06LS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 100A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.9059
  • 5000:$0.9297
BSC027N06LS5ATMA1
DISTI # 32405150		Infineon Technologies AGOptiMOS Power-Transistor,60V14426
  • 8:$2.1798
BSC027N06LS5ATMA1
DISTI # BSC027N06LS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 8-Pin TDSON T/R - Tape and Reel (Alt: BSC027N06LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.8649
  • 30000:$0.8809
  • 20000:$0.9109
  • 10000:$0.9449
  • 5000:$0.9809
BSC027N06LS5ATMA1
DISTI # SP001385616		Infineon Technologies AGTrans MOSFET N-CH 60V 8-Pin TDSON T/R (Alt: SP001385616)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.7409
  • 30000:€0.7939
  • 20000:€0.8549
  • 10000:€0.9259
  • 5000:€1.1109
BSC027N06LS5ATMA1
DISTI # BSC027N06LS5		Infineon Technologies AGTrans MOSFET N-CH 60V 8-Pin TDSON T/R (Alt: BSC027N06LS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 250000:$0.8621
  • 125000:$0.8732
  • 50000:$0.8845
  • 25000:$0.8962
  • 15000:$0.9204
  • 10000:$0.9460
  • 5000:$0.9730
BSC027N06LS5ATMA1
DISTI # 726-BSC027N06LS5ATMA		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		11816
  • 1:$2.0000
  • 10:$1.7000
  • 100:$1.3600
  • 500:$1.1900
  • 1000:$0.9880
  • 2500:$0.9200
  • 5000:$0.8860
Imagen Parte # Descripción
LM5109BQNGTTQ1

Mfr.#: LM5109BQNGTTQ1

OMO.#: OMO-LM5109BQNGTTQ1

 Gate Drivers High Volt 1A Peak Half Bridge
BSC016N06NSATMA1

Mfr.#: BSC016N06NSATMA1

OMO.#: OMO-BSC016N06NSATMA1

 MOSFET N-Ch 60V 100A DSON-8 OptiMOS
LM5164DDAR

Mfr.#: LM5164DDAR

OMO.#: OMO-LM5164DDAR

 Switching Voltage Regulators LM5164 PRODUCTION COMMERCIAL
ERJ-MS4HF10MU

Mfr.#: ERJ-MS4HF10MU

OMO.#: OMO-ERJ-MS4HF10MU

 Current Sense Resistors - SMD 2512 2W 10mOhm +/-1% AEC-Q200
NVMFS5C673NLAFT1G

Mfr.#: NVMFS5C673NLAFT1G

OMO.#: OMO-NVMFS5C673NLAFT1G

 MOSFET TRENCH 6 60V NFET
LM5109BQNGTTQ1

Mfr.#: LM5109BQNGTTQ1

OMO.#: OMO-LM5109BQNGTTQ1-TEXAS-INSTRUMENTS

 Gate Drivers High Volt 1A Peak Half Bridge
009296002553906

Mfr.#: 009296002553906

OMO.#: OMO-009296002553906-AVX

 Headers & Wire Housings 2WAY POKE HOME VERTICAL TOP MOUNT
BSC016N06NSATMA1

Mfr.#: BSC016N06NSATMA1

OMO.#: OMO-BSC016N06NSATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 30A TDSON-8
PQ2614BHA-100K

Mfr.#: PQ2614BHA-100K

OMO.#: OMO-PQ2614BHA-100K-BOURNS

 FIXED IND 10UH 30A 1.9MOHM SMD
NVMFS5C673NLAFT1G

Mfr.#: NVMFS5C673NLAFT1G

OMO.#: OMO-NVMFS5C673NLAFT1G-ON-SEMICONDUCTOR

 TRENCH 6 60V NFET
Disponibilidad
Valores:
11
En orden:
1994
Ingrese la cantidad:
El precio actual de BSC027N06LS5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,00 US$
2,00 US$
10
1,70 US$
17,00 US$
100
1,36 US$
136,00 US$
500
1,19 US$
595,00 US$
1000
0,99 US$
988,00 US$
2500
0,92 US$
2 300,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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