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F3L11MR12W2M1B65BOMA1

F3L11MR12W2M1B65BOMA1
Mfr. #:
F3L11MR12W2M1B65BOMA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules Easy 2B CoolSiC(TM) MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
F3L11MR12W2M1B65BOMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
F3L11MR12W2M1B65BOMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
Y
Tecnología:
Sic
Producto:
Módulos de carburo de silicio IGBT
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
1.2 kV
Voltaje de saturación colector-emisor:
1.75 V
Corriente continua del colector a 25 C:
50 A
Corriente de fuga puerta-emisor:
100 nA
Pd - Disipación de energía:
20 mW
Paquete / Caja:
Módulo
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Marca:
Infineon Technologies
Estilo de montaje:
Montaje con tornillo
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
15
Subcategoría:
IGBT
Nombre comercial:
Easy 2B CoolSiC
Parte # Alias:
F3L11MR12W2M1_B65 SP001684176
Tags
F3L1, F3L
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Imagen Parte # Descripción
F3L11MR12W2M1B65BOMA1

Mfr.#: F3L11MR12W2M1B65BOMA1

OMO.#: OMO-F3L11MR12W2M1B65BOMA1

 IGBT Modules Easy 2B CoolSiC(TM) MOSFET
Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de F3L11MR12W2M1B65BOMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
204,30 US$
204,30 US$
5
199,39 US$
996,95 US$
10
194,43 US$
1 944,30 US$
25
191,71 US$
4 792,75 US$
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