SI4894BDY-T1-E3

SI4894BDY-T1-E3
Mfr. #:
SI4894BDY-T1-E3
Fabricante:
Vishay
Descripción:
Darlington Transistors MOSFET 30V 12V 1.4W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4894BDY-T1-E3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI4894BDY-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4894BDY-E3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
SOIC-Narrow-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
1.4 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
10 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
8.9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
11 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
33 ns
Tiempo de retardo de encendido típico
13 ns
Modo de canal
Mejora
Tags
SI4894BDY-T1-E, SI4894BDY-T1, SI4894BDY-T, SI4894B, SI4894, SI489, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4894BDY-T1-E3
DISTI # V72:2272_09216628
Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R
RoHS: Compliant
517
  • 500:$0.6430
  • 250:$0.7033
  • 100:$0.7109
  • 25:$0.8846
  • 10:$0.8954
  • 1:$1.0409
SI4894BDY-T1-E3
DISTI # SI4894BDY-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 30V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
5000In Stock
  • 2500:$0.5852
SI4894BDY-T1-E3
DISTI # SI4894BDY-T1-E3CT-ND
Vishay SiliconixMOSFET N-CH 30V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5000In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI4894BDY-T1-E3
DISTI # SI4894BDY-T1-E3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5000In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI4894BDY-T1-E3
DISTI # 25790174
Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R
RoHS: Compliant
517
  • 500:$0.6430
  • 250:$0.7033
  • 100:$0.7109
  • 25:$0.8846
  • 14:$0.8954
SI4894BDY-T1-E3
DISTI # SI4894BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R (Alt: SI4894BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4894BDY-T1-E3
    DISTI # SI4894BDY-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4894BDY-T1-E3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.5529
    • 5000:$0.5359
    • 10000:$0.5139
    • 15000:$0.4999
    • 25000:$0.4869
    SI4894BDY-T1-E3
    DISTI # SI4894BDY-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R (Alt: SI4894BDY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 2500:€0.4419
    • 5000:€0.3019
    • 10000:€0.2599
    • 15000:€0.2399
    • 25000:€0.2229
    SI4894BDY-T1-E3
    DISTI # 781-SI4894BDY-E3
    Vishay IntertechnologiesMOSFET 30V 12V 1.4W
    RoHS: Compliant
    2421
    • 1:$1.3100
    • 10:$1.0800
    • 100:$0.8230
    • 500:$0.7080
    • 1000:$0.6700
    • 2500:$0.6210
    SI4894BDY-T1-E3Vishay SiliconixSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET2180
    • 2001:$0.3520
    • 447:$0.4000
    • 1:$1.2800
    SI4894BDY-T1-E3-PBFVishay Intertechnologies 1674
    • 1054:$0.6650
    • 212:$0.7600
    • 1:$1.9000
    SI4894BDY-T1-E3-PBFVishay IntertechnologiesINSTOCK24136
      SI4894BDY-T1-E3Vishay IntertechnologiesMOSFET 30V 12V 1.4WAmericas -
        SI4894BDY-T1-E3
        DISTI # C1S803601298029
        Vishay IntertechnologiesMOSFETs
        RoHS: Compliant
        517
        • 250:$0.7033
        • 100:$0.7109
        • 25:$0.8846
        • 10:$0.8954
        Imagen Parte # Descripción
        SI4894BDY-T1-E3

        Mfr.#: SI4894BDY-T1-E3

        OMO.#: OMO-SI4894BDY-T1-E3

        MOSFET 30V 12V 1.4W
        SI4894BDY-T1-E3

        Mfr.#: SI4894BDY-T1-E3

        OMO.#: OMO-SI4894BDY-T1-E3-VISHAY

        Darlington Transistors MOSFET 30V 12V 1.4W
        SI4894BDY-T1-E3-CUT TAPE

        Mfr.#: SI4894BDY-T1-E3-CUT TAPE

        OMO.#: OMO-SI4894BDY-T1-E3-CUT-TAPE-1190

        Nuevo y original
        SI4894BDY

        Mfr.#: SI4894BDY

        OMO.#: OMO-SI4894BDY-1190

        Nuevo y original
        SI4894BDY-T1

        Mfr.#: SI4894BDY-T1

        OMO.#: OMO-SI4894BDY-T1-1190

        Nuevo y original
        SI4894BDY-T1-E3 GE3

        Mfr.#: SI4894BDY-T1-E3 GE3

        OMO.#: OMO-SI4894BDY-T1-E3-GE3-1190

        Nuevo y original
        SI4894BDY-T1-E3-PBF

        Mfr.#: SI4894BDY-T1-E3-PBF

        OMO.#: OMO-SI4894BDY-T1-E3-PBF-1190

        Nuevo y original
        SI4894BDY-T1-GE3

        Mfr.#: SI4894BDY-T1-GE3

        OMO.#: OMO-SI4894BDY-T1-GE3-VISHAY

        MOSFET N-CH 30V 8.9A 8-SOIC
        SI4894BDY-T1-GE3.

        Mfr.#: SI4894BDY-T1-GE3.

        OMO.#: OMO-SI4894BDY-T1-GE3--1190

        Nuevo y original
        SI4894BDY-TI-E3

        Mfr.#: SI4894BDY-TI-E3

        OMO.#: OMO-SI4894BDY-TI-E3-1190

        Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        2500
        Ingrese la cantidad:
        El precio actual de SI4894BDY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,38 US$
        0,38 US$
        10
        0,36 US$
        3,61 US$
        100
        0,34 US$
        34,19 US$
        500
        0,32 US$
        161,50 US$
        1000
        0,30 US$
        304,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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