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PSMN018-100ESFQ

PSMN018-100ESFQ
Mfr. #:
PSMN018-100ESFQ
Fabricante:
Nexperia
Descripción:
MOSFET N-CHANNEL 100V 53A I2PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PSMN018-100ESFQ Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
PSMN018, PSMN01, PSMN0, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN018-100ESF - NextPower 100 V, 18 mΩ N-channel MOSFET in I2PAK package
***ical
NextPower 100 V, 18 mohm N-channel MOSFET in I2PAK package
***i-Key
MOSFET N-CHANNEL 100V 53A I2PAK
***ark
Mosfet, N-Ch, 100V, 53A, Sot-226; Transistor Polarity:n Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 100V, 53A, SOT-226; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:111W; Transistor Case Style:SOT-226; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, N-CH, 100V, 53A, SOT-226; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:53A; Napięcie drenu / źródła Vds:100V; Rezystancja przewodzenia Rds(on):0.015ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.2V; Straty mocy Pd:111W; Rodzaj obudowy tranzystora:SOT-226; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
PSMN018-100ESFQ
DISTI # V72:2272_17598700		NexperiaNextPower 100 V, 18 mohm N-channel MOSFET in I2PAK package4994
  • 3000:$0.4982
  • 1000:$0.5074
  • 500:$0.5165
  • 250:$0.5256
  • 100:$0.5348
  • 25:$0.5440
  • 10:$0.6043
  • 1:$0.6617
PSMN018-100ESFQ
DISTI # V36:1790_17598700		NexperiaNextPower 100 V, 18 mohm N-channel MOSFET in I2PAK package0
    PSMN018-100ESFQ
    DISTI # PSMN018-100ESFQ-ND    		NexperiaMOSFET N-CHANNEL 100V 53A I2PAK
    RoHS: Compliant
    Min Qty: 5000
    Container: Tube    		Temporarily Out of Stock
    • 5000:$0.5246
    PSMN018-100ESFQ
    DISTI # 31081323    		NexperiaNextPower 100 V, 18 mohm N-channel MOSFET in I2PAK package4994
    • 3000:$0.4982
    • 1000:$0.5074
    • 500:$0.5165
    • 250:$0.5256
    • 100:$0.5348
    • 25:$0.5440
    • 14:$0.6043
    PSMN018-100ESFQ
    DISTI # PSMN018-100ESFQ    		NexperiaPSMN018-100ESF/SOT226/I2PAK - Tape and Reel (Alt: PSMN018-100ESFQ)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$0.4509
    • 25000:$0.4619
    • 15000:$0.4739
    • 10000:$0.4859
    • 5000:$0.4929
    PSMN018-100ESFQ
    DISTI # 771-PSMN018-100ESFQ    		NexperiaMOSFET PSMN018-100ESF SOT226/I2PAK0
    • 5000:$0.4990
    • 10000:$0.4800
    Imagen Parte # Descripción
    PSMN018-80YS,115

    Mfr.#: PSMN018-80YS,115

    OMO.#: OMO-PSMN018-80YS-115

    		 MOSFET N-CHAN 80V 45A
    PSMN018-80YS

    Mfr.#: PSMN018-80YS

    OMO.#: OMO-PSMN018-80YS-1190

    		 Nuevo y original
    PSMN018-80YS115

    Mfr.#: PSMN018-80YS115

    OMO.#: OMO-PSMN018-80YS115-1190

    		 Now Nexperia Power Field-Effect Transistor, 45A I(D), 80V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
    PSMN018-100ESFQ

    Mfr.#: PSMN018-100ESFQ

    OMO.#: OMO-PSMN018-100ESFQ-NEXPERIA

    		 MOSFET N-CHANNEL 100V 53A I2PAK
    PSMN018-100PSFQ

    Mfr.#: PSMN018-100PSFQ

    OMO.#: OMO-PSMN018-100PSFQ-NEXPERIA

    		 MOSFET N-CH 100V 53A TO220AB
    PSMN018-80YS,115

    Mfr.#: PSMN018-80YS,115

    OMO.#: OMO-PSMN018-80YS-115-NEXPERIA

    		 MOSFET N-CH 80V 45A LFPAK
    PSMN018-80YS,115-CUT TAPE

    Mfr.#: PSMN018-80YS,115-CUT TAPE

    OMO.#: OMO-PSMN018-80YS-115-CUT-TAPE-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de PSMN018-100ESFQ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,68 US$
    0,68 US$
    10
    0,64 US$
    6,42 US$
    100
    0,61 US$
    60,87 US$
    500
    0,57 US$
    287,45 US$
    1000
    0,54 US$
    541,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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