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FDMA8878

FDMA8878
Mfr. #:
FDMA8878
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET N-CHAN 30V 9A 2.4W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMA8878 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
MicroFET-6
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
9 A
Rds On - Resistencia de la fuente de drenaje:
16 mOhms
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.4 W
Configuración:
Único
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
0.75 mm
Longitud:
2 mm
Serie:
FDMA8878
Tipo de transistor:
1 N-Channel
Ancho:
2 mm
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Unidad de peso:
0.001058 oz
Tags
FDMA88, FDMA8, FDMA, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 30V, 6MLP; Transistor Polarity:N Channel; Continuous Drain Current
***emi
N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ
***ure Electronics
N-Channel 30 V 9 A 16 mOhm 2.4 W SMT Power Trench® MOSFET - MicroFET-6 (2x2)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been optimized for rDS(on), switching performance.
***nell
MOSFET, N-CH, 30V, 6MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***ure Electronics
Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***emi
N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ
***et Europe
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ure Electronics
Single N-Channel 30 V 12.4 mOhm 5.4 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 30V,A, 12mOhm, 5nC, PQFN3.3x3.3 single
***p One Stop
Trans MOSFET N-CH 30V 12A 8-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 5.0C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
***et Europe
Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin PQFN T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET
***ark
N CH MOSFET, DUAL, 30V, 10A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0163ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
***nell
MOSFET, DUAL, N-CH, 30V, 10A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 14.9 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 94 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 19
***Yang
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
***ure Electronics
N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parte # Mfg. Descripción Valores Precio
FDMA8878
DISTI # V72:2272_06337841		ON SemiconductorSINGLE PT8 30/20V NCH IN MLP 23000
  • 3000:$0.3590
  • 1000:$0.4024
  • 500:$0.4798
  • 250:$0.5447
  • 100:$0.5659
  • 25:$0.6481
  • 10:$0.7201
  • 1:$0.8446
FDMA8878
DISTI # FDMA8878CT-ND		ON SemiconductorMOSFET N-CH 30V 9A MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5800In Stock
  • 1000:$0.4623
  • 500:$0.5855
  • 100:$0.7550
  • 10:$0.9550
  • 1:$1.0800
FDMA8878
DISTI # FDMA8878DKR-ND		ON SemiconductorMOSFET N-CH 30V 9A MICROFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5800In Stock
  • 1000:$0.4623
  • 500:$0.5855
  • 100:$0.7550
  • 10:$0.9550
  • 1:$1.0800
FDMA8878
DISTI # FDMA8878TR-ND		ON SemiconductorMOSFET N-CH 30V 9A MICROFET
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.4189
FDMA8878
DISTI # 29421032		ON SemiconductorSINGLE PT8 30/20V NCH IN MLP 23000
  • 3000:$0.3590
  • 1000:$0.4024
  • 500:$0.4798
  • 250:$0.5447
  • 100:$0.5659
  • 25:$0.6481
  • 17:$0.7201
FDMA8878
DISTI # FDMA8878		ON SemiconductorTrans MOSFET N-CH 30V 9A 6-Pin MicroFET EP T/R - Tape and Reel (Alt: FDMA8878)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3549
  • 6000:$0.3529
  • 12000:$0.3479
  • 18000:$0.3439
  • 30000:$0.3349
FDMA8878
DISTI # FDMA8878		ON SemiconductorTrans MOSFET N-CH 30V 9A 6-Pin MicroFET EP T/R (Alt: FDMA8878)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$0.3303
  • 6000:$0.3176
  • 9000:$0.3058
  • 15000:$0.2949
  • 30000:$0.2847
  • 75000:$0.2752
  • 150000:$0.2707
FDMA8878
DISTI # 512-FDMA8878		ON SemiconductorMOSFET N-CHAN 30V 9A 2.4W
RoHS: Compliant		11368
  • 1:$0.9000
  • 10:$0.7620
  • 100:$0.5850
  • 500:$0.5170
  • 1000:$0.4080
  • 3000:$0.3620
  • 9000:$0.3490
FDMA8878
DISTI # 8063481P		ON SemiconductorMOSFETFAIRCHILDFDMA8878, RL1700
  • 50:£0.3490
  • 200:£0.3080
  • 500:£0.2820
FDMA8878
DISTI # C1S541901508957		ON SemiconductorTrans MOSFET N-CH 30V 9A 6-Pin MLP EP T/R
RoHS: Compliant		3000
  • 250:$0.5447
  • 100:$0.5659
  • 25:$0.6481
  • 10:$0.7201
Imagen Parte # Descripción
CSD17318Q2

Mfr.#: CSD17318Q2

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Mfr.#: HP8K22TB

OMO.#: OMO-HP8K22TB

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SSM6K504NU,LF

Mfr.#: SSM6K504NU,LF

OMO.#: OMO-SSM6K504NU-LF

 MOSFET Small Signal MOSFET
FDMA1032CZ

Mfr.#: FDMA1032CZ

OMO.#: OMO-FDMA1032CZ

 MOSFET 20V Complementary PowerTrench MOSFET
LTC3646IDE-1#PBF

Mfr.#: LTC3646IDE-1#PBF

OMO.#: OMO-LTC3646IDE-1-PBF

 Switching Voltage Regulators 40V, 1A, 100uA IQ Synchronous Step-Down Converter
GRM033R61A225KE47D

Mfr.#: GRM033R61A225KE47D

OMO.#: OMO-GRM033R61A225KE47D

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 2.2uF 10volts *Derate Voltage/Temp
SSM6K504NU,LF

Mfr.#: SSM6K504NU,LF

OMO.#: OMO-SSM6K504NU-LF-TOSHIBA-SEMICONDUCTOR-AND-STOR

 MOSFET N-CH 30V 9A UDFN6B
SI7153DN-T1-GE3

Mfr.#: SI7153DN-T1-GE3

OMO.#: OMO-SI7153DN-T1-GE3-VISHAY

 MOSFET P-CH 30V 18A POWERPAK1212
BLM03HD102SN1D

Mfr.#: BLM03HD102SN1D

OMO.#: OMO-BLM03HD102SN1D-MURATA-ELECTRONICS

 EMI Filter Beads, Chips & Arrays 1000ohms HIGH SPEED SIG
GRM035R60J475ME15D

Mfr.#: GRM035R60J475ME15D

OMO.#: OMO-GRM035R60J475ME15D-MURATA-ELECTRONICS

 Cap Ceramic 4.7uF 6.3V X5R 20% Pad SMD 0201 85C T/R
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de FDMA8878 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,90 US$
0,90 US$
10
0,76 US$
7,62 US$
100
0,58 US$
58,50 US$
500
0,52 US$
258,50 US$
1000
0,41 US$
408,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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