RFP2N10L

RFP2N10L
Mfr. #:
RFP2N10L
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET TO-220AB N-Ch Power
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RFP2N10L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
N
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
2 A
Rds On - Resistencia de la fuente de drenaje:
1.05 Ohms
Vgs - Voltaje puerta-fuente:
10 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
25 W
Configuración:
Único
Modo de canal:
Mejora
Altura:
16.3 mm
Longitud:
10.67 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
10 ns
Unidad de peso:
0.090478 oz
Tags
RFP2N1, RFP2N, RFP2, RFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Not available to order TO-220AB N-Ch Power
***i-Key
MOSFET N-CH 100V 2A TO-220AB
Parte # Mfg. Descripción Valores Precio
RFP2N10L
DISTI # RFP2N10L-ND
ON SemiconductorMOSFET N-CH 100V 2A TO-220AB
RoHS: Not compliant
Min Qty: 800
Container: Tube
Limited Supply - Call
    RFP2N10L
    DISTI # 512-RFP2N10L
    ON SemiconductorMOSFET TO-220AB N-Ch Power
    RoHS: Not compliant
    0
      RFP2N10LFairchild Semiconductor Corporation 11126
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        OMO.#: OMO-RFP2N10L

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        OMO.#: OMO-RFP2N08-1190

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        OMO.#: OMO-RFP2N10-1190

        Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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        Mfr.#: RFP2N10L

        OMO.#: OMO-RFP2N10L-ON-SEMICONDUCTOR

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        Mfr.#: RFP2N18

        OMO.#: OMO-RFP2N18-1190

        - Bulk (Alt: RFP2N18)
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        Mfr.#: RFP2N20L

        OMO.#: OMO-RFP2N20L-1190

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        RFP2P08

        Mfr.#: RFP2P08

        OMO.#: OMO-RFP2P08-1190

        Power Field-Effect Transistor, 2A I(D), 80V, 3.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        Disponibilidad
        Valores:
        Available
        En orden:
        1000
        Ingrese la cantidad:
        El precio actual de RFP2N10L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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