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PTFB093608SVV2R250XTMA1

PTFB093608SVV2R250XTMA1
Mfr. #:
PTFB093608SVV2R250XTMA1
Fabricante:
Infineon Technologies
Descripción:
RF MOSFET Transistors RFP-LDMOS 9
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PTFB093608SVV2R250XTMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
PTFB093608SV R250 SP000957080 V2
Tecnología
Si
Tags
PTFB093, PTFB09, PTFB0, PTFB, PTF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
LDMOS FET, High Power RF, 320W, 28V, 920-960MHz, H-37275G-6/2 Pkg, T/R 250
***i-Key
IC AMP RF LDMOS
***ineon
High Power RF LDMOS FET, 360 W, 28 V, 920 960 MHz | Summary of Features: Broadband internal matching; Enhanced for use in DPD error correction systems and Doherty applications; Wide video bandwidth; Typical single-carrier WCDMA performance, 960 MHz, 28 V, device leads in gullwing configuration - Average output power = 160 W - Gain = 19 dB - Efficiency = 40%; Integrated ESD protection; Low thermal resistance; Capable of handling 10:1 VSWR @ 32 V, 960 MHz, +3 dB Input Overdrive = 500 W (CW) output power; Pb-Free and RoHS compliant; Package: H-37275G-6/2, gull wing, surface mount
Parte # Mfg. Descripción Valores Precio
PTFB093608SVV2R250XTMA1
DISTI # PTFB093608SVV2R250XTMA1-ND		Infineon Technologies AGIC AMP RF LDMOS
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$127.8077
PTFB093608SVV2R250XTMA1
DISTI # PTFB093608SVV2R250XTMA1		Infineon Technologies AGLDMOS FET, High Power RF, 320W, 28V, 920-960MHz, H-37275G-6/2 Pkg, T/R 250 - Tape and Reel (Alt: PTFB093608SVV2R250XTMA1)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
    PTFB093608SVV2R250XTMA1
    DISTI # 726-PTFB093608SVV2R2    		Infineon Technologies AGRF MOSFET Transistors RFP-LDMOS 90
      Imagen Parte # Descripción
      PTFB093608SVV2R250XTMA1

      Mfr.#: PTFB093608SVV2R250XTMA1

      OMO.#: OMO-PTFB093608SVV2R250XTMA1-INFINEON-TECHNOLOGIES

      		 RF MOSFET Transistors RFP-LDMOS 9
      PTFB093608SV

      Mfr.#: PTFB093608SV

      OMO.#: OMO-PTFB093608SV-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de PTFB093608SVV2R250XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      191,71 US$
      191,71 US$
      10
      182,13 US$
      1 821,26 US$
      100
      172,54 US$
      17 254,04 US$
      500
      162,95 US$
      81 477,40 US$
      1000
      153,37 US$
      153 369,20 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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