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MR25H128ACDF

MR25H128ACDF
Mfr. #:
MR25H128ACDF
Fabricante:
Everspin Technologies
Descripción:
NVRAM 128Kb 3.3V 16Kx8 SPI
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MR25H128ACDF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MR25H128ACDF más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnologías Everspin
Categoria de producto:
NVRAM
RoHS:
Y
Paquete / Caja:
DFN-8
Tipo de interfaz:
SPI
Tamaño de la memoria:
128 kbit
Organización:
16 k x 8
Ancho del bus de datos:
8 bit
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.7 V
Corriente de suministro de funcionamiento:
6 mA, 23 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Serie:
MR25H128A
Embalaje:
Bandeja
Marca:
Tecnologías Everspin
Estilo de montaje:
SMD / SMT
Sensible a la humedad:
Yes
Pd - Disipación de energía:
600 mW
Tipo de producto:
NVRAM
Cantidad de paquete de fábrica:
570
Subcategoría:
Memoria y almacenamiento de datos
Tags
MR25H12, MR25H1, MR25H, MR25, MR2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
MRAM 128Kbit Serial-SPI Interface 3V/3.3V 8-Pin DFN EP Tray
Serial SPI MRAMs
Everspin Technologies MR25H256 / MR25H10 /MRH25H128 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
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Disponibilidad
Valores:
586
En orden:
2569
Ingrese la cantidad:
El precio actual de MR25H128ACDF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,96 US$
5,96 US$
10
4,79 US$
47,90 US$
100
4,36 US$
436,00 US$
250
3,94 US$
985,00 US$
500
3,53 US$
1 765,00 US$
1000
2,98 US$
2 980,00 US$
2500
2,83 US$
7 075,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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