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FQP8P10

FQP8P10
Mfr. #:
FQP8P10
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 100V P-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQP8P10 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
8 A
Rds On - Resistencia de la fuente de drenaje:
530 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
65 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FQP8P10
Tipo de transistor:
1 P-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
4.3 S
Otoño:
35 ns
Tipo de producto:
MOSFET
Hora de levantarse:
110 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
11 ns
Unidad de peso:
0.063493 oz
Tags
FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***u
    M***u
    CA

    looks good thks

    2019-04-02
    V***n
    V***n
    RU

    Normal

    2019-01-09
***Components
In a Tube of 50, P-Channel MOSFET, 5.7 A, 100 V, 3-Pin TO-220 ON Semiconductor FQP8P10
***Semiconductor
Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, TO-220
*** Electronics
TRANSISTOR MOSFET P-CHAN E-MODE TO-220
***ical
Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail
***i-Key
MOSFET P-CH 100V 8A TO-220
***ure Electronics
100V, 8A, 0.53OHM, P-CHANNEL, TO-220
***ser
MOSFETs 100V P-Channel QFET
***inecomponents.com
100V P-Channel QFET®
***ark
Mosfet, P, To-220; Transistor Polarity:p Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W Rohs Compliant: No
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
Prices include import duty and tax. MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Id Max:-8A; Device Marking:FQP8P10; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-30V; Voltage Vgs Rds on Measurement:-10V
***nell
MOSFET, P, TO-220; Biegunowość tranzystora:Kanał P; Prąd ciągły Id drenu:8A; Napięcie drenu / źródła Vds:-100V; Rezystancja przewodzenia Rds(on):0.41ohm; Napięcie Vgs pomiaru Rds(on):-10V; Napięcie progowe Vgs:-4V; Straty mocy Pd:65W; Rodzaj obudowy tranzystora:TO-220; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:Lead (27-Jun-2018); Maks. prąd Id:-8A; Napięcie Vds, typ.:-100V; Napięcie Vgs pomiaru Rds on:-10V; Napięcie Vgs, maks.:-30V; Oznaczenie układu:FQP8P10; Prąd impulsowy Idm:32A; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Zakres temperatury roboczej:-55°C do +175°C
Parte # Mfg. Descripción Valores Precio
FQP8P10
DISTI # V36:1790_06301292		ON SemiconductorQF -100V 530MOHM TO2200
  • 1000000:$0.3139
  • 500000:$0.3148
  • 100000:$0.4927
  • 10000:$0.9130
  • 1000:$0.9900
FQP8P10
DISTI # FQP8P10FS-ND		ON SemiconductorMOSFET P-CH 100V 8A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1031In Stock
  • 5000:$0.4185
  • 3000:$0.4406
  • 1000:$0.4720
  • 100:$0.7238
  • 25:$0.8812
  • 10:$0.9280
  • 1:$1.0400
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 1		Europe - 200
  • 1000:€0.3229
  • 500:€0.3479
  • 100:€0.3769
  • 50:€0.4119
  • 25:€0.4529
  • 10:€0.5029
  • 1:€0.5659
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 1985
  • 500:$0.3209
  • 250:$0.3289
  • 150:$0.3339
  • 100:$0.3379
  • 50:$0.3399
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 715
Container: Bulk		Americas - 0
  • 7150:$0.4319
  • 3575:$0.4429
  • 2145:$0.4479
  • 1430:$0.4539
  • 715:$0.4569
FQP8P10.
DISTI # 14J0096		ON SemiconductorMOSFET, P, TO-220,Transistor Polarity:P Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,Power Dissipation Pd:65W RoHS Compliant: No3259
  • 1000:$0.4550
  • 500:$0.5760
  • 100:$0.6510
  • 10:$0.8480
  • 1:$1.0000
FQP8P10.
DISTI # 27AC5844		Fairchild Semiconductor CorporationQF -100V 530MOHM TO220 ROHS COMPLIANT: YES0
  • 500:$0.3310
  • 250:$0.3390
  • 150:$0.3440
  • 100:$0.3480
  • 1:$0.3500
FQP8P10
DISTI # 512-FQP8P10		ON SemiconductorMOSFET 100V P-Channel QFET
RoHS: Compliant		2285
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6450
  • 500:$0.5700
  • 1000:$0.4500
FQP8P10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		6708
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
FQP8P10
DISTI # 8075879		ON SemiconductorMOSFETFAIRCHILDFQP8P10, PK1150
  • 1000:£0.3200
  • 500:£0.3740
  • 100:£0.4580
  • 50:£0.5270
  • 10:£0.5960
FQP8P10.
DISTI # 4388215		ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant		4254
  • 1000:$0.6920
  • 500:$0.8770
  • 100:$0.9920
  • 10:$1.3000
  • 1:$1.5200
FQP8P10.
DISTI # 4388215		ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant		4272
  • 500:£0.4440
  • 250:£0.4730
  • 100:£0.5020
  • 10:£0.7100
  • 1:£0.8800
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de FQP8P10 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,99 US$
0,99 US$
10
0,84 US$
8,40 US$
100
0,64 US$
64,50 US$
500
0,57 US$
285,00 US$
1000
0,45 US$
450,00 US$
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