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SIS862ADN-T1-GE3

SIS862ADN-T1-GE3
Mfr. #:
SIS862ADN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET N-Channel 60 V (D-S) MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIS862ADN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIS862ADN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
52 A
Rds On - Resistencia de la fuente de drenaje:
11 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
19.8 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
39 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
6 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
11 ns
Tags
SIS862, SIS86, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
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Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de SIS862ADN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,98 US$
0,98 US$
10
0,79 US$
7,86 US$
100
0,60 US$
59,60 US$
500
0,49 US$
246,50 US$
1000
0,39 US$
394,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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