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NGTB40N120IHRWG

NGTB40N120IHRWG
Mfr. #:
NGTB40N120IHRWG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors 1200V/40A RC IGBT FSII
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTB40N120IHRWG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB40N120IHRWG DatasheetNGTB40N120IHRWG Datasheet (P4-P6)NGTB40N120IHRWG Datasheet (P7-P9)NGTB40N120IHRWG Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.3 V
Voltaje máximo del emisor de puerta:
25 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
384 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
NGTB40N120IHR
Embalaje:
Tubo
Marca:
EN Semiconductor
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
0.229281 oz
Tags
NGTB40N12, NGTB40N1, NGTB40, NGTB4, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 120A 384000mW 3-Pin(3+Tab) TO-247 Tube
***Semiconductor
IGBT, 1200V 40A FS2-RC Induction Heating
***i-Key
IGBT 1200V 80A 384W TO247
Parte # Mfg. Descripción Valores Precio
NGTB40N120IHRWG
DISTI # V99:2348_07316683		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		20
  • 1:$1.1342
NGTB40N120IHRWG
DISTI # NGTB40N120IHRWGOS-ND		ON SemiconductorIGBT 1200V 80A 384W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		157In Stock
  • 2520:$2.6180
  • 510:$3.2594
  • 120:$3.8288
  • 30:$4.4180
  • 10:$4.6730
  • 1:$5.2000
NGTB40N120IHRWG
DISTI # 25863722		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		20
  • 3:$2.9181
NGTB40N120IHRWG
DISTI # 97W6298		ON SemiconductorIGBT, SINGLE, 1.2KV, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:384W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
  • 500:$2.4400
  • 250:$2.5100
  • 100:$3.0000
  • 50:$3.4600
  • 25:$3.6900
  • 10:$4.2100
  • 1:$4.8700
NGTB40N120IHRWG
DISTI # 863-NGTB40N120IHRWG		ON SemiconductorIGBT Transistors 1200V/40A RC IGBT FSII
RoHS: Compliant		282
  • 1:$4.9500
  • 10:$4.2100
  • 100:$3.6500
  • 250:$3.4600
  • 500:$3.1100
  • 1000:$2.6200
  • 2500:$2.4900
NGTB40N120IHRWG
DISTI # 7961353P		ON SemiconductorIGBT 1200V 40A FIELD STOPDIODE TO247, TU290
  • 36:£2.7300
  • 20:£3.0300
  • 5:£3.2000
  • 2:£3.3800
NGTB40N120IHRWGON Semiconductor 7228
    NGTB40N120IHRWG
    DISTI # 2399112    		ON Semiconductor 
    RoHS: Compliant    		0
    • 2500:$3.8300
    • 1000:$4.0300
    • 500:$4.7900
    • 250:$5.3200
    • 100:$5.6100
    • 10:$6.4700
    • 1:$7.6100
    NGTB40N120IHRWGON Semiconductor1200V,40A,IGBT FS2-RC Induction Heating30
    • 1:$4.4500
    • 100:$3.3400
    • 500:$2.8600
    • 1000:$2.6700
    Imagen Parte # Descripción
    FGY75T120SQDN

    Mfr.#: FGY75T120SQDN

    OMO.#: OMO-FGY75T120SQDN

    		 IGBT Transistors IGBT 1200V 75A UFS
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    Mfr.#: SCT10N120

    OMO.#: OMO-SCT10N120

    		 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    TLP5754(TP,E

    Mfr.#: TLP5754(TP,E

    OMO.#: OMO-TLP5754-TP-E

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    EKXF451ELL100MJ20S

    Mfr.#: EKXF451ELL100MJ20S

    OMO.#: OMO-EKXF451ELL100MJ20S

    		 Aluminum Electrolytic Capacitors - Radial Leaded 10uF 20% 450V Long Life
    RC0603FR-071KL

    Mfr.#: RC0603FR-071KL

    OMO.#: OMO-RC0603FR-071KL

    		 Thick Film Resistors - SMD 1K OHM 1%
    06035C104KAT2A

    Mfr.#: 06035C104KAT2A

    OMO.#: OMO-06035C104KAT2A-AVX

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.1uF 10% X7R
    TLP5754(TP,E

    Mfr.#: TLP5754(TP,E

    OMO.#: OMO-TLP5754-TP-E-TOSHIBA-SEMICONDUCTOR-AND-STOR

    		 Logic Output Optocouplers Photocoupler, Photo IC Output
    SCT10N120

    Mfr.#: SCT10N120

    OMO.#: OMO-SCT10N120-STMICROELECTRONICS

    		 MOSFET N-CH 1.2KV TO247-3
    CRCW08055K62FKEAC

    Mfr.#: CRCW08055K62FKEAC

    OMO.#: OMO-CRCW08055K62FKEAC-VISHAY-DALE

    		 D12/CRCW0805-C 100 5K62 1% ET1
    FGY75T120SQDN

    Mfr.#: FGY75T120SQDN

    OMO.#: OMO-FGY75T120SQDN-ON-SEMICONDUCTOR

    		 IGBT 1200V 75A UFS
    Disponibilidad
    Valores:
    244
    En orden:
    2227
    Ingrese la cantidad:
    El precio actual de NGTB40N120IHRWG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,95 US$
    4,95 US$
    10
    4,21 US$
    42,10 US$
    100
    3,65 US$
    365,00 US$
    250
    3,46 US$
    865,00 US$
    500
    3,11 US$
    1 555,00 US$
    1000
    2,62 US$
    2 620,00 US$
    2500
    2,49 US$
    6 225,00 US$
    5000
    2,40 US$
    12 000,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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