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IPP50R199CPXKSA1

IPP50R199CPXKSA1
Mfr. #:
IPP50R199CPXKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 500V 17A TO220-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP50R199CPXKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
17 A
Rds On - Resistencia de la fuente de drenaje:
180 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Qg - Carga de puerta:
34 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
139 W
Configuración:
Único
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Serie:
CoolMOS CE
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
14 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
80 ns
Tiempo típico de retardo de encendido:
35 ns
Parte # Alias:
IPP50R199CP IPP5R199CPXK SP000680934
Unidad de peso:
0.211644 oz
Tags
IPP50R199CP, IPP50R199, IPP50R19, IPP50R1, IPP50R, IPP50, IPP5, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 17A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 550V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***p One Stop Global
Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-220FP Tube
***ment14 APAC
MOSFET, N, 500V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:500V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:TO-220F; Power Dissipation Pd:34.5mW; Power Dissipation Pd:34.5W; Pulse Current Idm:63A; Termination Type:Through Hole; Voltage Vds:500V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.
***ure Electronics
Single N-Channel 500 V 0.19 Ohm 45 nC 30 W Silicon Flange Mount Mosfet TO-220FP
***icroelectronics
N-channel 500 V, 0.162 Ohm, 17 A, TO-220FP MDmesh(TM) II Power MOSFET
***ical
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 550V, 17A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.162ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***icroelectronics
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
*** Source Electronics
MOSFET N-CH 600V 17A TO-220FP / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N CH, 600V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Dra
***or
MOSFET N-CH 500V 18A TO220
*** Europe
N-CH SINGLE 500V TO220FP
***
N-CHANNEL 500V
***nell
MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Parte # Mfg. Descripción Valores Precio
IPP50R199CPXKSA1
DISTI # V36:1790_06377424		Infineon Technologies AGTrans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		0
    IPP50R199CPXKSA1
    DISTI # IPP50R199CPXKSA1-ND    		Infineon Technologies AGMOSFET N-CH 550V 17A TO-220
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 1000:$1.7015
    • 500:$2.0175
    • 100:$2.3700
    • 50:$2.7346
    • 1:$3.2200
    IPP50R199CPXK
    DISTI # IPP50R199CPXKSA1    		Infineon Technologies AGTrans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IPP50R199CPXKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 2000:$1.3900
    • 3000:$1.3900
    • 5000:$1.3900
    • 500:$1.4900
    • 1000:$1.4900
    IPP50R199CPXKSA1
    DISTI # 13AC9076    		Infineon Technologies AGMOSFET, N-CH, 500V, 23A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes386
    • 500:$2.0000
    • 100:$2.3000
    • 10:$2.6200
    • 1:$3.0400
    IPP50R199CPXKSA1
    DISTI # 726-IPP50R199CPXKSA1    		Infineon Technologies AGMOSFET N-Ch 500V 17A TO220-3
    RoHS: Compliant    		710
    • 1:$2.9200
    • 10:$2.4800
    • 100:$2.1500
    • 250:$2.0400
    • 500:$1.8300
    IPP50R199CPXKSA1Infineon Technologies AGPower Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		500
    • 1000:$1.3300
    • 500:$1.4000
    • 100:$1.4600
    • 25:$1.5200
    • 1:$1.6400
    IPP50R199CPXKSA1
    DISTI # 8576909    		Infineon Technologies AGMOSFET N-CH 500V 17A COOLMOS TO-220AB, TU950
    • 500:£1.2630
    IPP50R199CPXKSA1
    DISTI # IPP50R199CPXKSA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,500V,17A,139W,PG-TO220-3471
    • 1:$2.4300
    • 3:$2.1400
    • 10:$1.9300
    • 100:$1.8000
    IPP50R199CPXKSA1
    DISTI # 2725869    		Infineon Technologies AGMOSFET, N-CH, 500V, 23A, TO-220
    RoHS: Compliant    		386
    • 1000:$2.5900
    • 500:$3.0600
    • 100:$3.7800
    • 50:$4.1600
    • 1:$5.1600
    IPP50R199CPXKSA1
    DISTI # 2725869    		Infineon Technologies AGMOSFET, N-CH, 500V, 23A, TO-220426
    • 500:£1.2700
    • 250:£1.4200
    • 100:£1.4900
    • 10:£1.7300
    • 1:£2.5500
    IPP50R199CPXKSA1
    DISTI # XSKDRABS0006535    		Infineon Technologies AG 
    RoHS: Compliant    		300 in Stock0 on Order
    • 300:$2.2320
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    Disponibilidad
    Valores:
    710
    En orden:
    2693
    Ingrese la cantidad:
    El precio actual de IPP50R199CPXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,92 US$
    2,92 US$
    10
    2,48 US$
    24,80 US$
    100
    2,15 US$
    215,00 US$
    250
    2,04 US$
    510,00 US$
    500
    1,83 US$
    915,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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