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FGPF10N60UNDF

FGPF10N60UNDF
Mfr. #:
FGPF10N60UNDF
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 600V, 10A Short Circuit Rated IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGPF10N60UNDF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGPF10N60UNDF más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220F
Estilo de montaje:
A través del orificio
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2 V
Corriente continua del colector a 25 C:
20 A
Pd - Disipación de energía:
17 W
Serie:
FGPF10N60UNDF
Embalaje:
Tubo
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Unidad de peso:
0.080072 oz
Tags
FGPF1, FGPF, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans IGBT Chip N-CH 600V 20A 42000mW 3-Pin(3+Tab) TO-220F Rail
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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
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Trans IGBT Chip N-CH 600V 20A 139000mW 3-Pin(3+Tab) TO-220 Rail
***ure Electronics
FGP10N60UNDF Series 600 V 20 A N-Ch Short Circuit Rated IGBT - TO220-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
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Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 16A, TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 32W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins
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Trans IGBT Chip N-CH 600V 14.3A 34000mW 3-Pin(3+Tab) TO-220AB Full-Pak Tube
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600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak package
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IRG4IBC20FD Series 600 V 14.3 A Through Hole Fast CoPack IGBT - TO-220-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 14.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ineon SCT
Copacked 600V IGBT in a TO-220 FullPak package with ultrafast 1-8 kHz ultrafast,ultrasoft recovery antiparallel diode, TO-220-3 FP, RoHS
***ment14 APAC
IGBT, N; Transistor Type:IGBT; DC Collector Current:14.3A; Power Dissipation Pd:34W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic Continuous a Max:14.3A; Package / Case:TO-220FP; Power Dissipation Max:34W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
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Trans IGBT Chip N-CH 600V 20A 30000mW 3-Pin(3+Tab) TO-220FP Tube
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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 20A, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi
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Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220FP Tube
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16 A, 600 V low drop IGBT with soft and fast recovery diode
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STMICROELECTRONICS STGF10NB60SD IGBT Single Transistor, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 Pins
***nell
IGBT, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
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N-CHANNEL IGBT
FGPF1XN60 Short Circuit Rated IGBTs
ON Semiconductor's FGPF1XN60 Short Circuit Rated IGBTs use advanced NPT IGBT Technology, which offers the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential. These IGBTs feature short circuit rating of 10µs, high current capability, high input impedance, and fast switching. These devices are ideal for home applicances inverter-driven applications (air conditioner, washing machine, refrigerators, dish washer) and industrial inverter applications (sewing machine and CNC).Learn More
Parte # Mfg. Descripción Valores Precio
FGPF10N60UNDF
DISTI # V36:1790_06339515		ON Semiconductor600V 10A NPT IGBT340
  • 10000:$0.8507
  • 5000:$0.8844
  • 2000:$0.9181
  • 1000:$0.9696
  • 500:$1.1353
  • 100:$1.2647
  • 10:$1.5573
  • 1:$1.8129
FGPF10N60UNDF
DISTI # FGPF10N60UNDF-ND		ON SemiconductorIGBT 600V 20A 42W TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube		999In Stock
  • 1000:$1.0370
  • 500:$1.2515
  • 100:$1.5233
  • 10:$1.8950
  • 1:$2.1100
FGPF10N60UNDF
DISTI # 26762816		ON Semiconductor600V 10A NPT IGBT340
  • 10000:$0.8507
  • 5000:$0.8844
  • 2000:$0.9181
  • 1000:$0.9696
  • 500:$1.1353
  • 100:$1.2647
  • 10:$1.5573
  • 8:$1.8129
FGPF10N60UNDF
DISTI # FGPF10N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220F Tube - Rail/Tube (Alt: FGPF10N60UNDF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.8899
  • 2000:$0.8839
  • 4000:$0.8729
  • 6000:$0.8619
  • 10000:$0.8399
FGPF10N60UNDF
DISTI # FGPF10N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin TO-220F T/R (Alt: FGPF10N60UNDF)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1:€1.5099
  • 10:€1.2349
  • 25:€1.0559
  • 50:€0.9579
  • 100:€0.9429
  • 500:€0.9289
  • 1000:€0.9149
FGPF10N60UNDF
DISTI # 512-FGPF10N60UNDF		ON SemiconductorIGBT Transistors 600V, 10A Short Circuit Rated IGBT
RoHS: Compliant		1419
  • 1:$2.0000
  • 10:$1.7000
  • 100:$1.3600
  • 500:$1.1900
  • 1000:$0.9880
FGPF10N60UNDF
DISTI # 8648903P		ON SemiconductorIGBT 600V 10A SHORT CIRCUIT RATED TO220F, TU1720
  • 100:£0.9180
  • 50:£1.1420
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Mfr.#: ROE-1205S

OMO.#: OMO-ROE-1205S-RECOM-POWER

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Mfr.#: CRV1D1212SC

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 POWER DRIVER
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FGPF10N60UNDF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,00 US$
2,00 US$
10
1,70 US$
17,00 US$
100
1,36 US$
136,00 US$
500
1,19 US$
595,00 US$
1000
0,99 US$
988,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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