OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

A2G35S200-01SR3

A2G35S200-01SR3
Mfr. #:
A2G35S200-01SR3
Fabricante:
NXP / Freescale
Descripción:
RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2G35S200-01SR3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2G35S200-01SR3 DatasheetA2G35S200-01SR3 Datasheet (P4-P6)A2G35S200-01SR3 Datasheet (P7-P9)A2G35S200-01SR3 Datasheet (P10)
ECAD Model:
Más información:
A2G35S200-01SR3 más información
Atributo del producto
Valor de atributo
Fabricante:
MACOM
Categoria de producto:
Amplificador de RF
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-20
Escribe:
2-Stage Amplifier
Frecuencia de operación:
2.5 GHz to 3.5 GHz
Ganar:
27 dB
Voltaje de suministro operativo:
11 V
Corriente de suministro de funcionamiento:
25 mA
Temperatura máxima de funcionamiento:
+ 85 C
Embalaje:
Carrete
Marca:
MACOM
Tipo de producto:
Amplificador de RF
Cantidad de paquete de fábrica:
500
Subcategoría:
Circuitos integrados inalámbricos y RF
Tags
A2G3, A2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
AIRFAST RF POWER GAN TRANSISTOR, 3400-3600 MHZ, 40 W AVG., 48 V, REEL 13" Q1 NDP, TR
***W
RF Power Transistor,3400 to 3600 MHz, 180 W, Typ Gain in dB is 16.1 @ 3500 MHz, 48 V, GaN, SOT1828
***et
RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Parte # Mfg. Descripción Valores Precio
A2G35S200-01SR3
DISTI # 568-15206-1-ND		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		246In Stock
  • 10:$134.7860
  • 1:$141.4800
A2G35S200-01SR3
DISTI # 568-15206-6-ND		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		246In Stock
  • 10:$134.7860
  • 1:$141.4800
A2G35S200-01SR3
DISTI # 568-15206-2-ND		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$123.4358
A2G35S200-01SR3
DISTI # 01AC8235		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR, 3400-3800 MHZ, 40 W AVG., 48 V0
  • 100:$116.0200
  • 50:$123.4400
  • 25:$125.3000
  • 10:$127.1500
  • 5:$130.8600
  • 1:$134.5800
A2G35S200-01SR3
DISTI # 841-A2G35S200-01SR3		NXP SemiconductorsRF Amplifier A2G35S200-01S/CFM2F///REEL 13 Q1 NDP
RoHS: Compliant		0
  • 250:$139.2100
Imagen Parte # Descripción
A2G35S200-01SR3

Mfr.#: A2G35S200-01SR3

OMO.#: OMO-A2G35S200-01SR3

 RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
A2G35S200-01SR3

Mfr.#: A2G35S200-01SR3

OMO.#: OMO-A2G35S200-01SR3-NXP-SEMICONDUCTORS

 AIRFAST RF POWER GAN TRANSISTOR
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de A2G35S200-01SR3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Empezar con
Nuevos productos
  • PCF85263 CMOS Real-Time Clock
    PCF85263 CMOS Real-Time Clock
    NXP's tiny real-time clock/calendar is optimized for low power consumption and with automatic switching to battery on main power loss.
  • Compare A2G35S200-01SR3
    Compare A2G35S200-01SR3
    A2G30453702 vs A2G30S02501GN vs A2G35S16001SR3
  • NFC Contactless Readers
    NFC Contactless Readers
    NXP's NFC frontend with an advanced 32-bit microcontroller
  • Smart Charging Solutions
    Smart Charging Solutions
    NXP's smart charging solution consists of a primary side flyback QR controller, a secondary side SR controller, and a protocol controller.
  • FRDM-KL26Z
    FRDM-KL26Z
    FRDM-KL26Z is an ultra-low-cost development platform for Kinetis L series KL16 and KL26 MCUs built on ARM® Cortex™-M0+ processors.
  • Single-Coil Wireless Reference Design
    Single-Coil Wireless Reference Design
    Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology
More Newest Products
Top