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SKM200GB126D

SKM200GB126D
Mfr. #:
SKM200GB126D
Fabricante:
SEMIKRON
Descripción:
SEMITRANS, 1200V, 200A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SKM200GB126D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SKM200GB12, SKM200GB1, SKM200GB, SKM200G, SKM200, SKM20, SKM2, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***trelec
IGBT Module SEMITRANS 3 1.2 kV
***ikron
Features: Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x I C Typical Applications: AC inverter drives UPS Electronic welders
***ark
IGBT MODULE, 1.2KV, 260A, SEMITRANS 3; Continuous Collector Current:260A; Collector Emitter Saturation Voltage:2.1V; Power Dissipation:220W; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ment14 APAC
IGBT MODULE, DUAL, 1200V; Transistor Polarity:N Channel; DC Collector Current:260A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:SEMITRANS 3; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Av Current Ic:260A; Current Ic Continuous a Max:260A; Current Ic Continuous b Max:190A; Current Temperature:25°C; External Depth:61.4mm; External Width:105mm; Fixing Centres:93mm; Fixing Hole Diameter:5.4mm; No. of Transistors:2; Package / Case:SEMITRANS 3; Power Dissipation Pd:220W; Pulsed Current Icm:200A; Rise Time:40ns; SMD Marking:SEMITRANS 3; Termination Type:Screw; Voltage:1.2kV; Voltage Vces:1.2kV
***ical
Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray
***ineon SCT
EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS
***ment14 APAC
IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power
***ark
IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ineon
EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
***p One Stop
Trans IGBT Module N-CH 1200V 200A 680000mW 20-Pin ECONO4-1 Tray
***ark
Igbt Module; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:680W; Operating Temperature Max:150°C; Igbt Termination:stud; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes
***ineon
EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
***ow.cn
Trans IGBT Module N-CH 1200V 135A 500000mW Automotive 20-Pin ECONO4-1 Tray
***ineon SCT
EconoPACK™ 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology, AG-ECONO4-1, RoHS
***ment14 APAC
IGBT, POW, QUAD W NTC, 1200V, 100A; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:20; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:500W
***ineon
EconoPACK 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
***ical
Trans IGBT Module N-CH 1200V 220A 690000mW 7-Pin Case SP-6 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Dual common source, 1200V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
POWER MOD IGBT TRENCH DL SRC SP6
***ical
Trans IGBT Module N-CH 1200V 280A 890000mW 7-Pin Case SP-6 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Phase leg, 1200V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
POWER MODULE IGBT 1200V 200A SP6
*** Stop Electro
Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 1.2KV 280A 7-Pin Case SP6
***rochip SCT
High Voltage Power Module, Dual common source, 1200V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
POWER MOD IGBT TRENCH DL SRC SP6
Parte # Mfg. Descripción Valores Precio
SKM 200 GB 126 D
DISTI # 91H1922		SEMIKRONIGBT MODULE, 1.2KV, 260A, SEMITRANS 3,Transistor Polarity:N Channel,DC Collector Current:260A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:220W,Collector Emitter Voltage V(br)ceo:1.2kV RoHS Compliant: Yes0
  • 100:$106.2400
  • 50:$113.0400
  • 25:$114.7400
  • 10:$116.4400
  • 5:$119.8400
  • 1:$123.2400
SKM200GB126D
DISTI # 71043274		SEMIKRONSEMITRANS,1200V,200A
RoHS: Compliant		0
  • 1:$196.4100
  • 12:$186.2500
  • 48:$174.2300
  • 96:$163.6800
  • 144:$154.3300
SKM200GB126D
DISTI # R1107998		SEMIKRONSKM200GB126D
RoHS: Compliant		0
  • 1:$291.9000
  • 2:$256.8000
  • 5:$233.6000
  • 10:$219.2000
  • 20:$204.0000
SKM200GB126D
DISTI # 4682460		SEMIKRONIGBT MODULE DUAL SKM200GB126D 200A 1200V, EA41
  • 20:£115.2800
  • 10:£123.5800
  • 5:£131.6900
  • 2:£144.8100
  • 1:£164.5800
SKM200GB126D
DISTI # SKM200GB126D		SEMIKRONPOWER IGBT TRANSISTOR
RoHS: Compliant		0
    SKM200GB126D
    DISTI # 1095517    		SEMIKRON 
    RoHS: Compliant    		0
    • 50:$183.8800
    • 10:$187.0600
    • 1:$190.3400
    Imagen Parte # Descripción
    SKM200GAH123DKL11

    Mfr.#: SKM200GAH123DKL11

    OMO.#: OMO-SKM200GAH123DKL11-1190

    		 Nuevo y original
    SKM200GAH123DKL110

    Mfr.#: SKM200GAH123DKL110

    OMO.#: OMO-SKM200GAH123DKL110-1190

    		 Nuevo y original
    SKM200GAH123DKLD

    Mfr.#: SKM200GAH123DKLD

    OMO.#: OMO-SKM200GAH123DKLD-1190

    		 Nuevo y original
    SKM200GAL123DKLD110

    Mfr.#: SKM200GAL123DKLD110

    OMO.#: OMO-SKM200GAL123DKLD110-1190

    		 Nuevo y original
    SKM200GAL126DKL

    Mfr.#: SKM200GAL126DKL

    OMO.#: OMO-SKM200GAL126DKL-1190

    		 Nuevo y original
    SKM200GAR123D

    Mfr.#: SKM200GAR123D

    OMO.#: OMO-SKM200GAR123D-1190

    		 Nuevo y original
    SKM200GB12T4SIC2

    Mfr.#: SKM200GB12T4SIC2

    OMO.#: OMO-SKM200GB12T4SIC2-1190

    		 POWER IGBT TRANSISTOR
    SKM200GBD123D1S

    Mfr.#: SKM200GBD123D1S

    OMO.#: OMO-SKM200GBD123D1S-1190

    		 Nuevo y original
    SKM200GBD1261S

    Mfr.#: SKM200GBD1261S

    OMO.#: OMO-SKM200GBD1261S-1190

    		 Nuevo y original
    SKM200GBD126D1S

    Mfr.#: SKM200GBD126D1S

    OMO.#: OMO-SKM200GBD126D1S-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de SKM200GB126D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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    10
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    100
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    1000
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    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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