FDMC612PZ

FDMC612PZ
Mfr. #:
FDMC612PZ
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET P-CH. ER TRENCH MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMC612PZ Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-33-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
40 A
Rds On - Resistencia de la fuente de drenaje:
13 mOhms
Vgs th - Voltaje umbral puerta-fuente:
900 mV
Qg - Carga de puerta:
53 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
26 W
Configuración:
Único
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
3.3 mm
Serie:
FDMC612PZ
Tipo de transistor:
1 P-Channel
Ancho:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
81 ns
Tipo de producto:
MOSFET
Hora de levantarse:
52 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
96 ns
Tiempo típico de retardo de encendido:
26 ns
Unidad de peso:
0.006349 oz
Tags
FDMC6, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
P-Channel PowerTrench® MOSFET -20V, -14A, 8.4mΩ
*** Stop Electro
Power Field-Effect Transistor, 14A I(D), 20V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Parte # Mfg. Descripción Valores Precio
FDMC612PZ
DISTI # FDMC612PZTR-ND
ON SemiconductorMOSFET P-CH 20V 8-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    FDMC612PZ
    DISTI # FDMC612PZCT-ND
    ON SemiconductorMOSFET P-CH 20V 8-MLP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      FDMC612PZ
      DISTI # FDMC612PZDKR-ND
      ON SemiconductorMOSFET P-CH 20V 8-MLP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        FDMC612PZ
        DISTI # 38X5353
        ON SemiconductorP-CH. ER TRENCH MOSFET / REEL0
          FDMC612PZ
          DISTI # 512-FDMC612PZ
          ON SemiconductorMOSFET P-CH. ER TRENCH MOSFET
          RoHS: Compliant
          0
            Imagen Parte # Descripción
            10M04SAM153C8G

            Mfr.#: 10M04SAM153C8G

            OMO.#: OMO-10M04SAM153C8G

            FPGA - Field Programmable Gate Array
            10M04SAM153C8G

            Mfr.#: 10M04SAM153C8G

            OMO.#: OMO-10M04SAM153C8G-INTEL

            IC FPGA 112 I/O 153MBGA MAX 10
            Disponibilidad
            Valores:
            Available
            En orden:
            2000
            Ingrese la cantidad:
            El precio actual de FDMC612PZ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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