PSMN1R7-30YL,115

PSMN1R7-30YL,115
Mfr. #:
PSMN1R7-30YL,115
Fabricante:
Nexperia
Descripción:
MOSFET N-CH 30V 100A LFPAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PSMN1R7-30YL,115 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
PSMN1R7-30YL,115 más información
Atributo del producto
Valor de atributo
Tags
PSMN1R7-3, PSMN1R7, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Supplied as a Tape, N-Channel MOSFET, 100 A, 30 V, 4-Pin SOT-669 Nexperia PSMN1R7-30YL,115
***peria
PSMN1R7-30YL - N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
***ure Electronics
N-Channel 30 V 2.4 mOhm 36.2 nC Surface Mont Logic Level Mosfet - LFPAK56
***ical
Trans MOSFET N-CH 30V 100A 5-Pin (4+Tab) LFPAK T/R
***et
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
***i-Key
MOSFET N-CH 30V 100A LFPAK
***ment14 APAC
MOSFET, N CH, 30V, 100A, 4-SOT-669; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:100A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):1.29mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
***nell
MOSFET, CANALE N 30V 100A SOT669; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.00129ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:109W; Modello Case Transistor:SOT-669; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:15A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza Stato On Max:1.7mohm; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:30V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
PSMN MOSFETs in LFPAK Package
Nexperia PSMN MOSFETs in LFPAK Package are logic level N-channel devices in an LFPAK package qualified to 150ºC. These MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The PSMN MOSFETs in LFPAK feature advanced TrenchMOS architecture for low RDSon and low gate charge.  These PSMN MOSFETs in LFPAK also provide high-efficiency gains in switching power converters.
Parte # Mfg. Descripción Valores Precio
PSMN1R7-30YL,115
DISTI # V72:2272_06540863
Nexperia<=30V N CH TRENCHFET0
    PSMN1R7-30YL,115
    DISTI # 1727-4162-1-ND
    NexperiaMOSFET N-CH 30V 100A LFPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    513In Stock
    • 500:$0.5622
    • 100:$0.6806
    • 10:$0.8730
    • 1:$0.9800
    PSMN1R7-30YL,115
    DISTI # 1727-4162-6-ND
    NexperiaMOSFET N-CH 30V 100A LFPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    513In Stock
    • 500:$0.5622
    • 100:$0.6806
    • 10:$0.8730
    • 1:$0.9800
    PSMN1R7-30YL,115
    DISTI # 1727-4162-2-ND
    NexperiaMOSFET N-CH 30V 100A LFPAK
    RoHS: Compliant
    Min Qty: 1500
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 7500:$0.4655
    • 3000:$0.4900
    • 1500:$0.5250
    PSMN1R730YL,115
    DISTI # PSMN1R7-30YL,115
    NexperiaTrans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R7-30YL,115)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.4209
    • 15000:$0.4319
    • 9000:$0.4429
    • 6000:$0.4539
    • 3000:$0.4599
    PSMN1R730YL,115
    DISTI # PSMN1R7-30YL115
    NexperiaTrans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Bulk (Alt: PSMN1R7-30YL115)
    RoHS: Not Compliant
    Min Qty: 715
    Container: Bulk
    Americas - 0
    • 7150:$0.4209
    • 3575:$0.4319
    • 2145:$0.4429
    • 1430:$0.4539
    • 715:$0.4599
    PSMN1R730YL,115
    DISTI # PSMN1R7-30YL,115
    NexperiaTrans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN1R7-30YL,115)
    RoHS: Compliant
    Min Qty: 1500
    Container: Tape and Reel
    Europe - 0
    • 15000:€0.4199
    • 9000:€0.4519
    • 6000:€0.4899
    • 3000:€0.5339
    • 1500:€0.6529
    PSMN1R7-30YL,115
    DISTI # 04R7688
    NexperiaN CHANNEL MOSFET, 30V, 100A,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.29mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,No. of Pins:4Pins RoHS Compliant: Yes2924
    • 1000:$0.5300
    • 500:$0.6730
    • 250:$0.7170
    • 100:$0.7610
    • 50:$0.8370
    • 25:$0.9130
    • 10:$0.9900
    • 1:$1.1600
    PSMN1R7-30YL,115
    DISTI # 771-PSMN1R7-30YL-T/R
    NexperiaMOSFET <=30V N CH TRENCHFET
    RoHS: Compliant
    2581
    • 1:$1.1500
    • 10:$0.9800
    • 100:$0.7530
    • 500:$0.6660
    • 1000:$0.5250
    PSMN1R7-30YL115NXP SemiconductorsNow Nexperia PSMN1R7-30YL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
    RoHS: Not Compliant
    9940
    • 1000:$0.4600
    • 500:$0.4900
    • 100:$0.5100
    • 25:$0.5300
    • 1:$0.5700
    PSMN1R7-30YL,115NXP Semiconductors 54
      PSMN1R7-30YL,115
      DISTI # 7982912P
      NexperiaLOGIC-LEVEL MOSFET N-CH. 30V 100A SOT669, RL990
      • 50:£0.6280
      • 25:£0.6500
      PSMN1R7-30YL.115
      DISTI # PSMN1R7-30YL.115
      NexperiaTransistor: N-MOSFET,unipolar,30V,100A,109W,PowerSO81242
      • 500:$0.5200
      • 100:$0.5600
      • 25:$0.6200
      • 5:$0.7700
      • 1:$0.8900
      PSMN1R7-30YL,115
      DISTI # 1699701
      NexperiaMOSFET, N CH 30V 100A SOT6693263
      • 500:£0.5060
      • 250:£0.5520
      • 100:£0.5980
      • 10:£0.8360
      • 1:£1.0400
      PSMN1R7-30YL,115
      DISTI # 1699701RL
      NexperiaMOSFET, N CH 30V 100A SOT669
      RoHS: Compliant
      0
      • 500:$0.8480
      • 100:$1.0300
      • 10:$1.3200
      • 1:$1.4800
      PSMN1R7-30YL,115
      DISTI # 1699701
      NexperiaMOSFET, N CH 30V 100A SOT669
      RoHS: Compliant
      2924
      • 500:$0.8480
      • 100:$1.0300
      • 10:$1.3200
      • 1:$1.4800
      Imagen Parte # Descripción
      PSMN1R7-60BS,118

      Mfr.#: PSMN1R7-60BS,118

      OMO.#: OMO-PSMN1R7-60BS-118

      MOSFET Std N-chanMOSFET
      PSMN1R7-25YLC115

      Mfr.#: PSMN1R7-25YLC115

      OMO.#: OMO-PSMN1R7-25YLC115-1190

      Now Nexperia PSMN1R7-25YLC - Power Field-Effect Transistor, 100A I(D), 25V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
      PSMN1R7-30YL

      Mfr.#: PSMN1R7-30YL

      OMO.#: OMO-PSMN1R7-30YL-1190

      Nuevo y original
      PSMN1R7-30YL+115

      Mfr.#: PSMN1R7-30YL+115

      OMO.#: OMO-PSMN1R7-30YL-115-1190

      Now Nexperia PSMN1R7-30YL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
      PSMN1R7-30YL,115

      Mfr.#: PSMN1R7-30YL,115

      OMO.#: OMO-PSMN1R7-30YL-115-NEXPERIA

      MOSFET N-CH 30V 100A LFPAK
      PSMN1R7-60BS

      Mfr.#: PSMN1R7-60BS

      OMO.#: OMO-PSMN1R7-60BS-1190

      Trans MOSFET N-CH 60V 120A 3-Pin SOT-404 (Alt: PSMN1R7-60BS)
      PSMN1R7-60BS,118

      Mfr.#: PSMN1R7-60BS,118

      OMO.#: OMO-PSMN1R7-60BS-118-NEXPERIA

      MOSFET N-CH 60V 120A D2PAK
      PSMN1R7-60BS118

      Mfr.#: PSMN1R7-60BS118

      OMO.#: OMO-PSMN1R7-60BS118-1190

      Nuevo y original
      PSMN1R7-25YLDX

      Mfr.#: PSMN1R7-25YLDX

      OMO.#: OMO-PSMN1R7-25YLDX-NEXPERIA

      PSMN1R7-25YLD/LFPAK/REEL 7 Q1
      PSMN1R7-25YLC

      Mfr.#: PSMN1R7-25YLC

      OMO.#: OMO-PSMN1R7-25YLC-1190

      Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
      El precio actual de PSMN1R7-30YL,115 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,70 US$
      0,70 US$
      10
      0,66 US$
      6,63 US$
      100
      0,63 US$
      62,84 US$
      500
      0,59 US$
      296,75 US$
      1000
      0,56 US$
      558,60 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Nuevos productos
      • Trench 9 40 V MOSFETs
        Nexperia’s Trench 9 power MOSFETs combine low voltage superjunction technology with advanced packaging capability.
      • ESD protection for 10 Gbps-ready devices
        The first single- and multi-line devices from Nexperia's TrEOS protection family deliver benchmark performance in all three key parameters.
      • DFN1010 Transistors
        Nexperia's DFN1010 transistors are small and powerful featuring next generation of packaging for currents up to 3 A.
      • NCRxxx LED Drivers
        Nexperia´s constant-current LED drivers offer a very cost-efficient and easy-to-implement solution for driving low- and medium-power LEDs.
      • PESDxIVN Series: In-vehicle Networking (IVN) ESD P
        Nexperia’s PESDxIVN series of automotive qualified protection technology and is ready for the next generation of automotive qualified leadless (DFN) packages.
      Top