FDD6690S

Mfr. #:: FDD6690S
Fabricante:: Rochester Electronics, LLC
Descripción:: - Bulk (Alt: FDD6690S)
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDD6690S Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: FAI

categoria de producto: Chips de IC

Tags: FDD6690, FDD669, FDD66, FDD6, FDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD6690S Descripción

***ser: Not available to order 30V N-Ch PowerTrench

***et Japan: Transistor MOSFET N-Channel 30V 50A 4-Pin TO-252 T/R

***ment14 APAC: MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ

***ure Electronics: N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA

*** Stop Electro: Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***nell: MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: Shielded Gate PowerTrench® MOSFET, N-Channel, 80 V, 37 A, 23 mΩ

***r Electronics: Power Field-Effect Transistor, 8A I(D), 80V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***nell: MOSFET, N CH, 80V, 37A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:62W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ark: Mosfet Transistor, N Channel, 15 A, 30 V, 0.02 Ohm, 4.5 V, 1.7 V Rohs Compliant: Yes

***icroelectronics: N-channel 30 V, 0.02 Ohm typ., 30 A StripFET(TM) II PowerMOSFET in a DPAK package

*** Source Electronics: Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 30V 30A DPAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 30A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 30V, 30A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 30A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 2.5V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Single N-Channel 60 V 8.8 mOhm 36 nC OptiMOS Power Mosfet - TO-252-3

*** Source Electronics: Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK / OptiMOS(TM)3 Power-Transistor

*** Stop Electro: Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 60V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***emi: N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

***ure Electronics: N-Channel 40 V 8.5 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***r Electronics: Power Field-Effect Transistor, 21A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 40V, 50A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Powe

***rchild Semiconductor: This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDD6690S DISTI # FDD6690S	ON Semiconductor	- Bulk (Alt: FDD6690S) Min Qty: 532 Container: Bulk	Americas - 0	5320:$0.5799 2660:$0.5939 1596:$0.6019 1064:$0.6099 532:$0.6139
FDD6690S	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 40A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant	2500	1000:$0.6200 500:$0.6500 100:$0.6800 25:$0.7100 1:$0.7600
FDD6690S	Fairchild Semiconductor Corporation	40 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252	245

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Imagen	Parte #	Descripción
	Mfr.#: FDD6530A OMO.#: OMO-FDD6530A	MOSFET 20V N-Ch PowerTrench
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	Mfr.#: FDD6N20TM OMO.#: OMO-FDD6N20TM	MOSFET 200V N Chanel MOSFET
	Mfr.#: FDD6030L-NL OMO.#: OMO-FDD6030L-NL-1190	Nuevo y original
	Mfr.#: FDD6606FSC OMO.#: OMO-FDD6606FSC-1190	Nuevo y original
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	Mfr.#: FDD6670S OMO.#: OMO-FDD6670S-1190	MOSFET 30V N-Ch PowerTrench
	Mfr.#: FDD6672 OMO.#: OMO-FDD6672-1190	Nuevo y original
	Mfr.#: FDD6680A FDD6680 OMO.#: OMO-FDD6680A-FDD6680-1190	Nuevo y original
	Mfr.#: FDD6N50TM_WS OMO.#: OMO-FDD6N50TM-WS-1190	6A, 500V UNIFET IN D-PAK (TO25

Disponibilidad

Valores:: Available
En orden:: 5500
Ingrese la cantidad:

El precio actual de FDD6690S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,87 US$~~; ~~0,87 US$~~

10: ~~0,83 US$~~; ~~8,26 US$~~

100: ~~0,78 US$~~; ~~78,29 US$~~

500: ~~0,74 US$~~; ~~369,70 US$~~

1000: ~~0,70 US$~~; ~~695,90 US$~~

Empezar con

FDD6690 9
FDD669 19
FDD66 99
FDD6 164
FDD 715

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FDD6690S

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes