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FDD6690S

FDD6690S
Mfr. #:
FDD6690S
Fabricante:
Rochester Electronics, LLC
Descripción:
- Bulk (Alt: FDD6690S)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDD6690S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
FAI
categoria de producto
Chips de IC
Tags
FDD6690, FDD669, FDD66, FDD6, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Not available to order 30V N-Ch PowerTrench
***et Japan
Transistor MOSFET N-Channel 30V 50A 4-Pin TO-252 T/R
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ
***ure Electronics
N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
Shielded Gate PowerTrench® MOSFET, N-Channel, 80 V, 37 A, 23 mΩ
***r Electronics
Power Field-Effect Transistor, 8A I(D), 80V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, N CH, 80V, 37A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:62W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ark
Mosfet Transistor, N Channel, 15 A, 30 V, 0.02 Ohm, 4.5 V, 1.7 V Rohs Compliant: Yes
***icroelectronics
N-channel 30 V, 0.02 Ohm typ., 30 A StripFET(TM) II PowerMOSFET in a DPAK package
*** Source Electronics
Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 30V 30A DPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 30V, 30A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 30A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 2.5V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 60 V 8.8 mOhm 36 nC OptiMOS™ Power Mosfet - TO-252-3
*** Source Electronics
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK / OptiMOS(TM)3 Power-Transistor
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 60V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ
***ure Electronics
N-Channel 40 V 8.5 mOhm Surface Mount PowerTrench Mosfet TO-252-3
***r Electronics
Power Field-Effect Transistor, 21A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 40V, 50A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Powe
***rchild Semiconductor
This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Parte # Mfg. Descripción Valores Precio
FDD6690S
DISTI # FDD6690S		ON Semiconductor- Bulk (Alt: FDD6690S)
Min Qty: 532
Container: Bulk		Americas - 0
  • 5320:$0.5799
  • 2660:$0.5939
  • 1596:$0.6019
  • 1064:$0.6099
  • 532:$0.6139
FDD6690SFairchild Semiconductor CorporationPower Field-Effect Transistor, 40A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Not Compliant		2500
  • 1000:$0.6200
  • 500:$0.6500
  • 100:$0.6800
  • 25:$0.7100
  • 1:$0.7600
FDD6690SFairchild Semiconductor Corporation40 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252245
    Imagen Parte # Descripción
    FDD6530A

    Mfr.#: FDD6530A

    OMO.#: OMO-FDD6530A

    		 MOSFET 20V N-Ch PowerTrench
    FDD6296

    Mfr.#: FDD6296

    OMO.#: OMO-FDD6296

    		 MOSFET 30V N-Ch PowerTrench Fast Switching
    FDD6N20TM

    Mfr.#: FDD6N20TM

    OMO.#: OMO-FDD6N20TM

    		 MOSFET 200V N Chanel MOSFET
    FDD6030L-NL

    Mfr.#: FDD6030L-NL

    OMO.#: OMO-FDD6030L-NL-1190

    		 Nuevo y original
    FDD6606FSC

    Mfr.#: FDD6606FSC

    OMO.#: OMO-FDD6606FSC-1190

    		 Nuevo y original
    FDD6630

    Mfr.#: FDD6630

    OMO.#: OMO-FDD6630-1190

    		 Nuevo y original
    FDD6670S

    Mfr.#: FDD6670S

    OMO.#: OMO-FDD6670S-1190

    		 MOSFET 30V N-Ch PowerTrench
    FDD6672

    Mfr.#: FDD6672

    OMO.#: OMO-FDD6672-1190

    		 Nuevo y original
    FDD6680A FDD6680

    Mfr.#: FDD6680A FDD6680

    OMO.#: OMO-FDD6680A-FDD6680-1190

    		 Nuevo y original
    FDD6N50TM_WS

    Mfr.#: FDD6N50TM_WS

    OMO.#: OMO-FDD6N50TM-WS-1190

    		 6A, 500V UNIFET IN D-PAK (TO25
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de FDD6690S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,87 US$
    0,87 US$
    10
    0,83 US$
    8,26 US$
    100
    0,78 US$
    78,29 US$
    500
    0,74 US$
    369,70 US$
    1000
    0,70 US$
    695,90 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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