OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

2MBI200S-120-50

2MBI200S-120-50
Mfr. #:
2MBI200S-120-50
Fabricante:
Fuji Electric Co Ltd
Descripción:
IGBT, DUAL, MODULE, 200A, 1200V, NPT, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.6V, Power Dissipation Pd:1.5kW, Collector Emitter Vo
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2MBI200S-120-50 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
2MBI200S, 2MBI20, 2MBI2, 2MBI, 2MB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Dual IGBT Module 200 A 1200V NPT; 300A; 2.6V
***ark
DUAL IGBT MODULE 200A 1200V NPT; Transistor Type:IGBT Module; Transistor Polarity:NPT; Voltage Vces:1200V; Max Current Ic Continuous a:300A; Max Voltage Vce Sat:2.6V; Power Dissipation:1500W; Case Style:M234; Termination Type:Screw; ;RoHS Compliant: Yes
***ment14 APAC
IGBT, DUAL, MODULE, 200A, 1200V, NPT; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:1.5kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7; Current Ic @ Vce Sat:200A; Current Ic Continuous a Max:200A; Current Temperature:25°C; External Depth:62mm; External Length / Height:30mm; External Width:108mm; Fall Time tf:450ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; No. of Transistors:2; Package / Case:M234; Power Dissipation Max:1.5kW; Power Dissipation Pd:1.5kW; Power Dissipation Pd:1.5kW; Pulsed Current Icm:400A; Rise Time:350ns; Termination Type:Screw; Voltage Vces:1.2kV
Parte # Mfg. Descripción Valores Precio
2MBI200S-120-50
DISTI # 56P5428		Fuji Electric Co LtdIGBT, DUAL, MODULE, 200A, 1200V, NPT,Transistor Polarity:N Channel,DC Collector Current:200A,Collector Emitter Saturation Voltage Vce(on):2.6V,Power Dissipation Pd:1.5kW,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:- RoHS Compliant: Yes0
    2MBI200S-120-50
    DISTI # 70212507    		Fuji Electric Co LtdDual IGBT Module 200 A 1200V NPT,300A,2.6V
    RoHS: Compliant    		0
    • 1:$194.0400
    • 5:$183.0600
    • 10:$173.2500
    • 25:$164.4400
    • 50:$156.4900
    2MBI200S-120-50
    DISTI # FE0000000001241    		Fuji Electric Co LtdIGBT STANDARD MODULE
    RoHS: Compliant    		0 in Stock0 on Order
    • 10:$188.9700
    • 1:$203.5000
    2MBI200S-120-50-M
    DISTI # FE0000000001242    		Fuji Electric Co LtdIGBT STANDARD MODULE
    RoHS: Compliant    		0 in Stock0 on Order
    • 10:$188.9700
    • 1:$203.5000
    2MBI200S-120-50
    DISTI # 1689579    		Fuji Electric Co LtdIGBT, DUAL, MODULE, 200A, 1200V, NPT
    RoHS: Compliant    		0
    • 10:$159.3100
    • 5:$162.0100
    • 2:$164.8000
    • 1:$167.7000
    Imagen Parte # Descripción
    2MBI200L-120

    Mfr.#: 2MBI200L-120

    OMO.#: OMO-2MBI200L-120-1190

    		 Nuevo y original
    2MBI200N-060-03

    Mfr.#: 2MBI200N-060-03

    OMO.#: OMO-2MBI200N-060-03-1190

    		 Nuevo y original
    2MBI200PB-140

    Mfr.#: 2MBI200PB-140

    OMO.#: OMO-2MBI200PB-140-1190

    		 300A, 1400V, N-CHANNEL IGBT
    2MBI200S-120

    Mfr.#: 2MBI200S-120

    OMO.#: OMO-2MBI200S-120-1190

    		 Nuevo y original
    2MBI200S-120-03

    Mfr.#: 2MBI200S-120-03

    OMO.#: OMO-2MBI200S-120-03-1190

    		 Nuevo y original
    2MBI200U2A-060

    Mfr.#: 2MBI200U2A-060

    OMO.#: OMO-2MBI200U2A-060-1190

    		 IGBT STANDARD MODULE
    2MBI200U2A-060-50

    Mfr.#: 2MBI200U2A-060-50

    OMO.#: OMO-2MBI200U2A-060-50-1190

    		 IGBT, DUAL, MODULE, 200A, 600V, NPT, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:660W, Collector Emitter Vol
    2MBI200U4H-120-50

    Mfr.#: 2MBI200U4H-120-50

    OMO.#: OMO-2MBI200U4H-120-50-1190

    		 IGBT, 2 PACK MODULE 1200V, 200A, M234, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.05V, Power Dissipation Pd:1.04kW, Collector Emitter
    2MBI200U4H-120E

    Mfr.#: 2MBI200U4H-120E

    OMO.#: OMO-2MBI200U4H-120E-1190

    		 Nuevo y original
    2MBI200U4H-170

    Mfr.#: 2MBI200U4H-170

    OMO.#: OMO-2MBI200U4H-170-1190

    		 300A, 1700V, N-CHANNEL IGBT
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de 2MBI200S-120-50 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    177,63 US$
    177,63 US$
    10
    168,75 US$
    1 687,49 US$
    100
    159,87 US$
    15 986,70 US$
    500
    150,99 US$
    75 492,75 US$
    1000
    142,10 US$
    142 104,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Top