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SIE822DF-T1-E3

SIE822DF-T1-E3
Mfr. #:
SIE822DF-T1-E3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 20V 50A 104W 3.4mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIE822DF-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIE822DF-T1-E3 más información
Atributo del producto
Valor de atributo
Tags
SIE822, SIE82, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiE822DF Series N-Channel 20 V 0.0055 Ohm 104 W Surface Mount Mosfet - PolarPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:50000mA; On Resistance, Rds(on):0.0055ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:138A; Drain Source Voltage Vds:20V; On Resistance Rds(on):3.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:104W; Transistor Case Style:PolarPAK; SVHC:No SVHC (20-Jun-2011); Base Number:822; N-channel Gate Charge:24nC; On State Resistance @ Vgs = 4.5V:5.5mohm; On State resistance @ Vgs = 10V:3.4mohm; Package / Case:PolarPAK; Power Dissipation Pd:104W; Power Dissipation Pd:104mW; Pulse Current Idm:80A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1.5V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Parte # Mfg. Descripción Valores Precio
SIE822DF-T1-E3
DISTI # SIE822DF-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 20V 50A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIE822DF-T1-E3
    DISTI # SIE822DF-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 31A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE822DF-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$1.2900
    • 6000:$1.2900
    • 12000:$1.1900
    • 18000:$1.1900
    • 30000:$1.1900
    SIE822DF-T1-E3
    DISTI # 781-SIE822DF-T1-E3    		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PolarPAK
    RoHS: Compliant    		0
    • 1:$2.9600
    • 10:$2.4600
    • 100:$1.9000
    • 500:$1.6700
    • 1000:$1.6000
    • 3000:$1.5900
    SIE822DF-T1-E3
    DISTI # 1497646    		Vishay Intertechnologies 
    RoHS: Compliant    		0
    • 1:$4.6900
    • 10:$3.9000
    • 100:$3.0100
    • 500:$2.6500
    • 1000:$2.5400
    • 3000:$2.5200
    SIE822DF-T1-E3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PolarPAKAmericas -
      Imagen Parte # Descripción
      SIE822DF-T1-E3

      Mfr.#: SIE822DF-T1-E3

      OMO.#: OMO-SIE822DF-T1-E3

      		 MOSFET 20V Vds 20V Vgs PolarPAK
      SIE822DF-T1-GE3

      Mfr.#: SIE822DF-T1-GE3

      OMO.#: OMO-SIE822DF-T1-GE3

      		 MOSFET 20V Vds 20V Vgs PolarPAK
      SIE822DF-T1-E3

      Mfr.#: SIE822DF-T1-E3

      OMO.#: OMO-SIE822DF-T1-E3-VISHAY

      		 RF Bipolar Transistors MOSFET 20V 50A 104W 3.4mohm @ 10V
      SIE822DF-T1-GE3

      Mfr.#: SIE822DF-T1-GE3

      OMO.#: OMO-SIE822DF-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 20V 138A 104W 3.4mohm @ 10V
      SIE822DF-T1-E3CT

      Mfr.#: SIE822DF-T1-E3CT

      OMO.#: OMO-SIE822DF-T1-E3CT-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de SIE822DF-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,78 US$
      1,78 US$
      10
      1,70 US$
      16,96 US$
      100
      1,61 US$
      160,65 US$
      500
      1,52 US$
      758,65 US$
      1000
      1,43 US$
      1 428,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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